JP2009253208A5 - - Google Patents

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Publication number
JP2009253208A5
JP2009253208A5 JP2008102556A JP2008102556A JP2009253208A5 JP 2009253208 A5 JP2009253208 A5 JP 2009253208A5 JP 2008102556 A JP2008102556 A JP 2008102556A JP 2008102556 A JP2008102556 A JP 2008102556A JP 2009253208 A5 JP2009253208 A5 JP 2009253208A5
Authority
JP
Japan
Prior art keywords
opening
region
peripheral circuit
insulating
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2008102556A
Other languages
English (en)
Japanese (ja)
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JP2009253208A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008102556A priority Critical patent/JP2009253208A/ja
Priority claimed from JP2008102556A external-priority patent/JP2009253208A/ja
Priority to US12/421,049 priority patent/US8093642B2/en
Publication of JP2009253208A publication Critical patent/JP2009253208A/ja
Priority to US13/314,541 priority patent/US20120080734A1/en
Publication of JP2009253208A5 publication Critical patent/JP2009253208A5/ja
Ceased legal-status Critical Current

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JP2008102556A 2008-04-10 2008-04-10 半導体記憶装置及びその製造方法 Ceased JP2009253208A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008102556A JP2009253208A (ja) 2008-04-10 2008-04-10 半導体記憶装置及びその製造方法
US12/421,049 US8093642B2 (en) 2008-04-10 2009-04-09 Semiconductor memory device and method of manufacturing the same
US13/314,541 US20120080734A1 (en) 2008-04-10 2011-12-08 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008102556A JP2009253208A (ja) 2008-04-10 2008-04-10 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009253208A JP2009253208A (ja) 2009-10-29
JP2009253208A5 true JP2009253208A5 (enExample) 2012-01-19

Family

ID=41163250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008102556A Ceased JP2009253208A (ja) 2008-04-10 2008-04-10 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (2) US8093642B2 (enExample)
JP (1) JP2009253208A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634251B1 (ko) * 2005-06-13 2006-10-13 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2010245374A (ja) * 2009-04-08 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
KR101137933B1 (ko) * 2009-10-30 2012-05-09 에스케이하이닉스 주식회사 가드링을 겸하는 부유막을 갖는 반도체장치 및 그 제조 방법
JP2011108927A (ja) * 2009-11-19 2011-06-02 Elpida Memory Inc 半導体装置の製造方法
JP2011151113A (ja) * 2010-01-20 2011-08-04 Elpida Memory Inc キャパシタ、該キャパシタを備える半導体装置および半導体装置の製造方法
JP2011233765A (ja) 2010-04-28 2011-11-17 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
US8766404B1 (en) * 2013-01-10 2014-07-01 Intermolecular, Inc. Device design for partially oriented rutile dielectrics
KR102366804B1 (ko) 2015-05-13 2022-02-25 삼성전자주식회사 반도체 소자의 제조 방법
US10748906B2 (en) 2015-05-13 2020-08-18 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2024038800A1 (ja) 2022-08-17 2024-02-22 株式会社新日本科学 投与デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375428B1 (ko) 1995-11-20 2003-05-17 가부시끼가이샤 히다치 세이사꾸쇼 반도체기억장치 및 그 제조방법
JP4180716B2 (ja) 1998-12-28 2008-11-12 富士通株式会社 半導体装置の製造方法
JP2000332216A (ja) 1999-05-18 2000-11-30 Sony Corp 半導体装置及びその製造方法
JP2001217406A (ja) 2000-02-02 2001-08-10 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002083880A (ja) * 2000-06-30 2002-03-22 Toshiba Corp 半導体装置及びその製造方法
JP4082971B2 (ja) * 2001-09-25 2008-04-30 旭テック株式会社 スカム破砕装置
JP2003179163A (ja) 2001-12-13 2003-06-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2004014714A (ja) 2002-06-05 2004-01-15 Mitsubishi Electric Corp キャパシタの製造方法
JP4353685B2 (ja) * 2002-09-18 2009-10-28 株式会社ルネサステクノロジ 半導体装置
KR100988082B1 (ko) * 2003-05-21 2010-10-18 삼성전자주식회사 스택형 커패시터, 그를 구비한 반도체 메모리 소자 및 그제조방법
JP2005032982A (ja) * 2003-07-14 2005-02-03 Renesas Technology Corp 半導体装置
JP4800796B2 (ja) 2005-04-14 2011-10-26 エルピーダメモリ株式会社 キャパシタの製造方法

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