JP2016527722A5 - - Google Patents
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- Publication number
- JP2016527722A5 JP2016527722A5 JP2016528598A JP2016528598A JP2016527722A5 JP 2016527722 A5 JP2016527722 A5 JP 2016527722A5 JP 2016528598 A JP2016528598 A JP 2016528598A JP 2016528598 A JP2016528598 A JP 2016528598A JP 2016527722 A5 JP2016527722 A5 JP 2016527722A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- well region
- trench
- semiconductor
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 238000000034 method Methods 0.000 claims 12
- 238000003491 array Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1313126.3A GB201313126D0 (en) | 2013-07-23 | 2013-07-23 | MOS-Bipolar Device |
| GB1313126.3 | 2013-07-23 | ||
| GB1314474.6 | 2013-08-13 | ||
| GBGB1314474.6A GB201314474D0 (en) | 2013-07-23 | 2013-08-13 | MOS-Bipolar device |
| PCT/GB2014/052013 WO2015011440A1 (en) | 2013-07-23 | 2014-07-02 | Mos-bipolar device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016527722A JP2016527722A (ja) | 2016-09-08 |
| JP2016527722A5 true JP2016527722A5 (enExample) | 2017-08-24 |
| JP6495272B2 JP6495272B2 (ja) | 2019-04-03 |
Family
ID=49119141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016528598A Active JP6495272B2 (ja) | 2013-07-23 | 2014-07-02 | Ｍｏｓ−バイポーラ素子 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10170605B2 (enExample) |
| EP (1) | EP3025373B1 (enExample) |
| JP (1) | JP6495272B2 (enExample) |
| KR (1) | KR102173473B1 (enExample) |
| CN (1) | CN105706241B (enExample) |
| AU (1) | AU2014294820B2 (enExample) |
| CA (1) | CA2918848A1 (enExample) |
| ES (1) | ES2942334T3 (enExample) |
| GB (3) | GB201313126D0 (enExample) |
| WO (1) | WO2015011440A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016112721B4 (de) | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
| DE102016117264B4 (de) | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| GB2606383A (en) | 2021-05-06 | 2022-11-09 | Eco Semiconductors Ltd | A semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761011B2 (ja) * | 1999-05-26 | 2011-08-31 | 株式会社豊田中央研究所 | サイリスタを有する半導体装置及びその製造方法 |
| GB9921068D0 (en) * | 1999-09-08 | 1999-11-10 | Univ Montfort | Bipolar mosfet device |
| JP4028333B2 (ja) * | 2002-09-02 | 2007-12-26 | 株式会社東芝 | 半導体装置 |
| JP4130356B2 (ja) | 2002-12-20 | 2008-08-06 | 株式会社東芝 | 半導体装置 |
| JP5984282B2 (ja) | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置 |
| US7968940B2 (en) * | 2007-07-05 | 2011-06-28 | Anpec Electronics Corporation | Insulated gate bipolar transistor device comprising a depletion-mode MOSFET |
| US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
| JP5634318B2 (ja) | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
| US8564047B2 (en) | 2011-09-27 | 2013-10-22 | Force Mos Technology Co., Ltd. | Semiconductor power devices integrated with a trenched clamp diode |
-
2013
- 2013-07-23 GB GBGB1313126.3A patent/GB201313126D0/en not_active Ceased
- 2013-08-13 GB GBGB1314474.6A patent/GB201314474D0/en not_active Ceased
- 2013-08-13 GB GBGB1314475.3A patent/GB201314475D0/en active Pending
-
2014
- 2014-07-02 JP JP2016528598A patent/JP6495272B2/ja active Active
- 2014-07-02 AU AU2014294820A patent/AU2014294820B2/en active Active
- 2014-07-02 EP EP14749944.6A patent/EP3025373B1/en active Active
- 2014-07-02 ES ES14749944T patent/ES2942334T3/es active Active
- 2014-07-02 US US14/906,654 patent/US10170605B2/en active Active
- 2014-07-02 CA CA2918848A patent/CA2918848A1/en not_active Abandoned
- 2014-07-02 WO PCT/GB2014/052013 patent/WO2015011440A1/en not_active Ceased
- 2014-07-02 CN CN201480042128.2A patent/CN105706241B/zh active Active
- 2014-07-02 KR KR1020167004755A patent/KR102173473B1/ko active Active
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