CN105706241B - Mos双极器件 - Google Patents
Mos双极器件 Download PDFInfo
- Publication number
- CN105706241B CN105706241B CN201480042128.2A CN201480042128A CN105706241B CN 105706241 B CN105706241 B CN 105706241B CN 201480042128 A CN201480042128 A CN 201480042128A CN 105706241 B CN105706241 B CN 105706241B
- Authority
- CN
- China
- Prior art keywords
- region
- well region
- devices
- well
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1313126.3 | 2013-07-23 | ||
| GBGB1313126.3A GB201313126D0 (en) | 2013-07-23 | 2013-07-23 | MOS-Bipolar Device |
| GBGB1314474.6A GB201314474D0 (en) | 2013-07-23 | 2013-08-13 | MOS-Bipolar device |
| GB1314474.6 | 2013-08-13 | ||
| PCT/GB2014/052013 WO2015011440A1 (en) | 2013-07-23 | 2014-07-02 | Mos-bipolar device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105706241A CN105706241A (zh) | 2016-06-22 |
| CN105706241B true CN105706241B (zh) | 2019-12-31 |
Family
ID=49119141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480042128.2A Active CN105706241B (zh) | 2013-07-23 | 2014-07-02 | Mos双极器件 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10170605B2 (enExample) |
| EP (1) | EP3025373B1 (enExample) |
| JP (1) | JP6495272B2 (enExample) |
| KR (1) | KR102173473B1 (enExample) |
| CN (1) | CN105706241B (enExample) |
| AU (1) | AU2014294820B2 (enExample) |
| CA (1) | CA2918848A1 (enExample) |
| ES (1) | ES2942334T3 (enExample) |
| GB (3) | GB201313126D0 (enExample) |
| WO (1) | WO2015011440A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016112721B4 (de) | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
| DE102016117264B4 (de) | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
| GB2606383A (en) | 2021-05-06 | 2022-11-09 | Eco Semiconductors Ltd | A semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373905A (zh) * | 1999-09-08 | 2002-10-09 | 德蒙特福特大学 | 双极金属氧化物半导体场效应晶体管器件 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761011B2 (ja) * | 1999-05-26 | 2011-08-31 | 株式会社豊田中央研究所 | サイリスタを有する半導体装置及びその製造方法 |
| JP4028333B2 (ja) * | 2002-09-02 | 2007-12-26 | 株式会社東芝 | 半導体装置 |
| JP4130356B2 (ja) * | 2002-12-20 | 2008-08-06 | 株式会社東芝 | 半導体装置 |
| JP5984282B2 (ja) * | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置 |
| US7968940B2 (en) * | 2007-07-05 | 2011-06-28 | Anpec Electronics Corporation | Insulated gate bipolar transistor device comprising a depletion-mode MOSFET |
| US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
| JP5634318B2 (ja) | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
| US8564047B2 (en) | 2011-09-27 | 2013-10-22 | Force Mos Technology Co., Ltd. | Semiconductor power devices integrated with a trenched clamp diode |
-
2013
- 2013-07-23 GB GBGB1313126.3A patent/GB201313126D0/en not_active Ceased
- 2013-08-13 GB GBGB1314475.3A patent/GB201314475D0/en active Pending
- 2013-08-13 GB GBGB1314474.6A patent/GB201314474D0/en not_active Ceased
-
2014
- 2014-07-02 AU AU2014294820A patent/AU2014294820B2/en active Active
- 2014-07-02 KR KR1020167004755A patent/KR102173473B1/ko active Active
- 2014-07-02 CA CA2918848A patent/CA2918848A1/en not_active Abandoned
- 2014-07-02 ES ES14749944T patent/ES2942334T3/es active Active
- 2014-07-02 CN CN201480042128.2A patent/CN105706241B/zh active Active
- 2014-07-02 WO PCT/GB2014/052013 patent/WO2015011440A1/en not_active Ceased
- 2014-07-02 EP EP14749944.6A patent/EP3025373B1/en active Active
- 2014-07-02 JP JP2016528598A patent/JP6495272B2/ja active Active
- 2014-07-02 US US14/906,654 patent/US10170605B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373905A (zh) * | 1999-09-08 | 2002-10-09 | 德蒙特福特大学 | 双极金属氧化物半导体场效应晶体管器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2942334T3 (es) | 2023-05-31 |
| EP3025373B1 (en) | 2022-12-21 |
| KR20160035029A (ko) | 2016-03-30 |
| US20160155831A1 (en) | 2016-06-02 |
| JP2016527722A (ja) | 2016-09-08 |
| KR102173473B1 (ko) | 2020-11-03 |
| GB201314474D0 (en) | 2013-09-25 |
| EP3025373A1 (en) | 2016-06-01 |
| AU2014294820A1 (en) | 2016-02-11 |
| AU2014294820B2 (en) | 2018-04-05 |
| CN105706241A (zh) | 2016-06-22 |
| JP6495272B2 (ja) | 2019-04-03 |
| US10170605B2 (en) | 2019-01-01 |
| WO2015011440A1 (en) | 2015-01-29 |
| GB201314475D0 (en) | 2013-09-25 |
| CA2918848A1 (en) | 2015-01-29 |
| GB201313126D0 (en) | 2013-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |