ES2942334T3 - Dispositivo MOS-bipolar - Google Patents
Dispositivo MOS-bipolar Download PDFInfo
- Publication number
- ES2942334T3 ES2942334T3 ES14749944T ES14749944T ES2942334T3 ES 2942334 T3 ES2942334 T3 ES 2942334T3 ES 14749944 T ES14749944 T ES 14749944T ES 14749944 T ES14749944 T ES 14749944T ES 2942334 T3 ES2942334 T3 ES 2942334T3
- Authority
- ES
- Spain
- Prior art keywords
- region
- trench
- well
- well region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 108091006146 Channels Proteins 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000007667 floating Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical group C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1313126.3A GB201313126D0 (en) | 2013-07-23 | 2013-07-23 | MOS-Bipolar Device |
| GBGB1314474.6A GB201314474D0 (en) | 2013-07-23 | 2013-08-13 | MOS-Bipolar device |
| PCT/GB2014/052013 WO2015011440A1 (en) | 2013-07-23 | 2014-07-02 | Mos-bipolar device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2942334T3 true ES2942334T3 (es) | 2023-05-31 |
Family
ID=49119141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES14749944T Active ES2942334T3 (es) | 2013-07-23 | 2014-07-02 | Dispositivo MOS-bipolar |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10170605B2 (enExample) |
| EP (1) | EP3025373B1 (enExample) |
| JP (1) | JP6495272B2 (enExample) |
| KR (1) | KR102173473B1 (enExample) |
| CN (1) | CN105706241B (enExample) |
| AU (1) | AU2014294820B2 (enExample) |
| CA (1) | CA2918848A1 (enExample) |
| ES (1) | ES2942334T3 (enExample) |
| GB (3) | GB201313126D0 (enExample) |
| WO (1) | WO2015011440A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016112721B4 (de) | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
| DE102016117264B4 (de) | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| GB2606383A (en) | 2021-05-06 | 2022-11-09 | Eco Semiconductors Ltd | A semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761011B2 (ja) * | 1999-05-26 | 2011-08-31 | 株式会社豊田中央研究所 | サイリスタを有する半導体装置及びその製造方法 |
| GB9921068D0 (en) * | 1999-09-08 | 1999-11-10 | Univ Montfort | Bipolar mosfet device |
| JP4028333B2 (ja) * | 2002-09-02 | 2007-12-26 | 株式会社東芝 | 半導体装置 |
| JP4130356B2 (ja) | 2002-12-20 | 2008-08-06 | 株式会社東芝 | 半導体装置 |
| JP5984282B2 (ja) | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置 |
| US7968940B2 (en) * | 2007-07-05 | 2011-06-28 | Anpec Electronics Corporation | Insulated gate bipolar transistor device comprising a depletion-mode MOSFET |
| US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
| JP5634318B2 (ja) | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
| US8564047B2 (en) | 2011-09-27 | 2013-10-22 | Force Mos Technology Co., Ltd. | Semiconductor power devices integrated with a trenched clamp diode |
-
2013
- 2013-07-23 GB GBGB1313126.3A patent/GB201313126D0/en not_active Ceased
- 2013-08-13 GB GBGB1314474.6A patent/GB201314474D0/en not_active Ceased
- 2013-08-13 GB GBGB1314475.3A patent/GB201314475D0/en active Pending
-
2014
- 2014-07-02 JP JP2016528598A patent/JP6495272B2/ja active Active
- 2014-07-02 AU AU2014294820A patent/AU2014294820B2/en active Active
- 2014-07-02 EP EP14749944.6A patent/EP3025373B1/en active Active
- 2014-07-02 ES ES14749944T patent/ES2942334T3/es active Active
- 2014-07-02 US US14/906,654 patent/US10170605B2/en active Active
- 2014-07-02 CA CA2918848A patent/CA2918848A1/en not_active Abandoned
- 2014-07-02 WO PCT/GB2014/052013 patent/WO2015011440A1/en not_active Ceased
- 2014-07-02 CN CN201480042128.2A patent/CN105706241B/zh active Active
- 2014-07-02 KR KR1020167004755A patent/KR102173473B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105706241B (zh) | 2019-12-31 |
| GB201314474D0 (en) | 2013-09-25 |
| AU2014294820A1 (en) | 2016-02-11 |
| AU2014294820B2 (en) | 2018-04-05 |
| US10170605B2 (en) | 2019-01-01 |
| EP3025373B1 (en) | 2022-12-21 |
| GB201313126D0 (en) | 2013-09-04 |
| KR102173473B1 (ko) | 2020-11-03 |
| KR20160035029A (ko) | 2016-03-30 |
| JP2016527722A (ja) | 2016-09-08 |
| CN105706241A (zh) | 2016-06-22 |
| JP6495272B2 (ja) | 2019-04-03 |
| GB201314475D0 (en) | 2013-09-25 |
| US20160155831A1 (en) | 2016-06-02 |
| EP3025373A1 (en) | 2016-06-01 |
| WO2015011440A1 (en) | 2015-01-29 |
| CA2918848A1 (en) | 2015-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105047712B (zh) | 纵向型半导体装置及其制造方法 | |
| US8957502B2 (en) | Semiconductor device | |
| US9023692B2 (en) | Semiconductor device and semiconductor device manufacturing method | |
| ES2942334T3 (es) | Dispositivo MOS-bipolar | |
| US8232593B2 (en) | Power semiconductor device | |
| CN101308871B (zh) | 绝缘栅半导体器件及其制造方法 | |
| JP2004022941A (ja) | 半導体装置 | |
| JP7101593B2 (ja) | 半導体装置 | |
| JP4764974B2 (ja) | 半導体装置 | |
| CN107210299A (zh) | 半导体装置 | |
| US9318590B2 (en) | IGBT using trench gate electrode | |
| KR20160029630A (ko) | 반도체 장치 | |
| US11289476B2 (en) | Semiconductor device including carrier injection layers | |
| KR101539880B1 (ko) | 전력 반도체 소자 | |
| KR101550798B1 (ko) | 래치업 억제구조를 가지는 전력용 반도체 장치 및 그 제조방법 | |
| US8039906B2 (en) | High-voltage metal oxide semiconductor device and fabrication method thereof | |
| KR101949519B1 (ko) | 전력 반도체 소자 및 그 제조방법 | |
| CN101288178A (zh) | 绝缘栅极场效应晶体管 | |
| JP3215145B2 (ja) | 絶縁ゲート付き電力用半導体素子 | |
| JP2006179815A (ja) | 半導体装置 | |
| GB2606383A (en) | A semiconductor device |