JP2009246210A5 - - Google Patents
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- JP2009246210A5 JP2009246210A5 JP2008092418A JP2008092418A JP2009246210A5 JP 2009246210 A5 JP2009246210 A5 JP 2009246210A5 JP 2008092418 A JP2008092418 A JP 2008092418A JP 2008092418 A JP2008092418 A JP 2008092418A JP 2009246210 A5 JP2009246210 A5 JP 2009246210A5
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- JP
- Japan
- Prior art keywords
- range
- silicon
- containing compound
- gas
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- Prior art date
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 18
- 239000002210 silicon-based material Substances 0.000 claims 18
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000003860 storage Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092418A JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| PCT/JP2009/057006 WO2009123325A1 (ja) | 2008-03-31 | 2009-03-30 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| KR1020107021877A KR20100129311A (ko) | 2008-03-31 | 2009-03-30 | 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치 |
| US12/935,138 US8119545B2 (en) | 2008-03-31 | 2009-03-30 | Forming a silicon nitride film by plasma CVD |
| TW098110757A TW200952078A (en) | 2008-03-31 | 2009-03-31 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092418A JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009246210A JP2009246210A (ja) | 2009-10-22 |
| JP2009246210A5 true JP2009246210A5 (enExample) | 2012-08-09 |
Family
ID=41307768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008092418A Pending JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009246210A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6101467B2 (ja) * | 2012-10-04 | 2017-03-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195562A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electron Corp | 不揮発性記憶装置の製造方法 |
| JPH0582795A (ja) * | 1991-08-22 | 1993-04-02 | Rohm Co Ltd | 半導体記憶装置 |
| WO2007139142A1 (ja) * | 2006-05-31 | 2007-12-06 | Tokyo Electron Limited | プラズマｃｖｄ方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置 |
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2008
- 2008-03-31 JP JP2008092418A patent/JP2009246210A/ja active Pending
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