JP2009246210A - 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 - Google Patents
窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Download PDFInfo
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- JP2009246210A JP2009246210A JP2008092418A JP2008092418A JP2009246210A JP 2009246210 A JP2009246210 A JP 2009246210A JP 2008092418 A JP2008092418 A JP 2008092418A JP 2008092418 A JP2008092418 A JP 2008092418A JP 2009246210 A JP2009246210 A JP 2009246210A
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- silicon nitride
- gas
- nitride film
- silicon
- plasma cvd
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 137
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000003860 storage Methods 0.000 title claims description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 91
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000002210 silicon-based material Substances 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 44
- 230000007246 mechanism Effects 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 228
- 239000007789 gas Substances 0.000 description 153
- 239000004065 semiconductor Substances 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092418A JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| PCT/JP2009/057006 WO2009123325A1 (ja) | 2008-03-31 | 2009-03-30 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| KR1020107021877A KR20100129311A (ko) | 2008-03-31 | 2009-03-30 | 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치 |
| US12/935,138 US8119545B2 (en) | 2008-03-31 | 2009-03-30 | Forming a silicon nitride film by plasma CVD |
| TW098110757A TW200952078A (en) | 2008-03-31 | 2009-03-31 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092418A JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009246210A true JP2009246210A (ja) | 2009-10-22 |
| JP2009246210A5 JP2009246210A5 (enExample) | 2012-08-09 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008092418A Pending JP2009246210A (ja) | 2008-03-31 | 2008-03-31 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009246210A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014075493A (ja) * | 2012-10-04 | 2014-04-24 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195562A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electron Corp | 不揮発性記憶装置の製造方法 |
| JPH0582795A (ja) * | 1991-08-22 | 1993-04-02 | Rohm Co Ltd | 半導体記憶装置 |
| WO2007139142A1 (ja) * | 2006-05-31 | 2007-12-06 | Tokyo Electron Limited | プラズマｃｖｄ方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置 |
-
2008
- 2008-03-31 JP JP2008092418A patent/JP2009246210A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195562A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electron Corp | 不揮発性記憶装置の製造方法 |
| JPH0582795A (ja) * | 1991-08-22 | 1993-04-02 | Rohm Co Ltd | 半導体記憶装置 |
| WO2007139142A1 (ja) * | 2006-05-31 | 2007-12-06 | Tokyo Electron Limited | プラズマｃｖｄ方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014075493A (ja) * | 2012-10-04 | 2014-04-24 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
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