JP2006156675A5 - - Google Patents
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- Publication number
- JP2006156675A5 JP2006156675A5 JP2004344608A JP2004344608A JP2006156675A5 JP 2006156675 A5 JP2006156675 A5 JP 2006156675A5 JP 2004344608 A JP2004344608 A JP 2004344608A JP 2004344608 A JP2004344608 A JP 2004344608A JP 2006156675 A5 JP2006156675 A5 JP 2006156675A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- containing gas
- plasma
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 38
- 239000007789 gas Substances 0.000 claims 30
- 238000000034 method Methods 0.000 claims 15
- 229910052721 tungsten Inorganic materials 0.000 claims 14
- 239000010937 tungsten Substances 0.000 claims 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 8
- 239000000460 chlorine Substances 0.000 claims 8
- 229910052801 chlorine Inorganic materials 0.000 claims 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 7
- -1 tungsten nitride Chemical class 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004344608A JP4701691B2 (ja) | 2004-11-29 | 2004-11-29 | エッチング方法 |
| KR1020077014786A KR100910681B1 (ko) | 2004-11-29 | 2005-11-18 | 에칭 방법 및 에칭 장치 |
| US11/791,718 US7842617B2 (en) | 2004-11-29 | 2005-11-18 | Etching method and etching apparatus |
| CN200580040949A CN100580887C (zh) | 2004-11-29 | 2005-11-18 | 蚀刻方法 |
| PCT/JP2005/021256 WO2006057202A1 (ja) | 2004-11-29 | 2005-11-18 | エッチング方法及びエッチング装置 |
| TW094141915A TWI385721B (zh) | 2004-11-29 | 2005-11-29 | Etching method and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004344608A JP4701691B2 (ja) | 2004-11-29 | 2004-11-29 | エッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006156675A JP2006156675A (ja) | 2006-06-15 |
| JP2006156675A5 true JP2006156675A5 (enExample) | 2008-02-07 |
| JP4701691B2 JP4701691B2 (ja) | 2011-06-15 |
Family
ID=36497939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004344608A Expired - Fee Related JP4701691B2 (ja) | 2004-11-29 | 2004-11-29 | エッチング方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7842617B2 (enExample) |
| JP (1) | JP4701691B2 (enExample) |
| KR (1) | KR100910681B1 (enExample) |
| CN (1) | CN100580887C (enExample) |
| TW (1) | TWI385721B (enExample) |
| WO (1) | WO2006057202A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
| KR101418438B1 (ko) * | 2007-07-10 | 2014-07-14 | 삼성전자주식회사 | 플라즈마 발생장치 |
| WO2009084194A1 (en) * | 2007-12-28 | 2009-07-09 | Tokyo Electron Limited | Etching method for metal film and metal oxide film, and manufacturing method for semiconductor device |
| JP2010118549A (ja) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20110061812A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| JP2011174540A (ja) * | 2010-02-24 | 2011-09-08 | Tokyo Electron Ltd | 真空排気用のボールバルブ及び真空排気装置 |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US9287113B2 (en) | 2012-11-08 | 2016-03-15 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| JP5514310B2 (ja) * | 2010-06-28 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US8969210B2 (en) | 2010-09-15 | 2015-03-03 | Tokyo Electron Limited | Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| JP5413342B2 (ja) * | 2010-09-27 | 2014-02-12 | 株式会社Ｓｕｍｃｏ | シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法 |
| JP5916044B2 (ja) * | 2010-09-28 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8562785B2 (en) | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
| US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
| JP5377587B2 (ja) * | 2011-07-06 | 2013-12-25 | 東京エレクトロン株式会社 | アンテナ、プラズマ処理装置及びプラズマ処理方法 |
| US8808562B2 (en) * | 2011-09-12 | 2014-08-19 | Tokyo Electron Limited | Dry metal etching method |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| WO2014208050A1 (ja) * | 2013-06-27 | 2014-12-31 | 日本電気株式会社 | スイッチング素子とその製造方法および半導体装置とその製造方法 |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| US9633867B2 (en) * | 2015-01-05 | 2017-04-25 | Lam Research Corporation | Method and apparatus for anisotropic tungsten etching |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| CN109463005B (zh) * | 2016-06-03 | 2023-12-15 | 恩特格里斯公司 | 二氧化铪和二氧化锆的气相蚀刻 |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
| US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
| JP6725176B2 (ja) * | 2016-10-31 | 2020-07-15 | 株式会社日立ハイテク | プラズマエッチング方法 |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| US10373804B2 (en) * | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| WO2019169335A1 (en) | 2018-03-02 | 2019-09-06 | Lam Research Corporation | Selective deposition using hydrolysis |
| US12040181B2 (en) | 2019-05-01 | 2024-07-16 | Lam Research Corporation | Modulated atomic layer deposition |
| JP7546000B2 (ja) | 2019-06-04 | 2024-09-05 | ラム リサーチ コーポレーション | パターニングにおける反応性イオンエッチングのための重合保護層 |
| US12431349B2 (en) | 2019-06-07 | 2025-09-30 | Lam Research Corporation | In-situ control of film properties during atomic layer deposition |
| WO2021025874A1 (en) | 2019-08-06 | 2021-02-11 | Lam Research Corporation | Thermal atomic layer deposition of silicon-containing films |
| CN113643973B (zh) * | 2020-04-27 | 2024-11-08 | 中微半导体设备(上海)股份有限公司 | 一种低温刻蚀的方法及装置 |
| KR20230043795A (ko) | 2020-07-28 | 2023-03-31 | 램 리써치 코포레이션 | 실리콘-함유 막들의 불순물 감소 |
| KR20240032126A (ko) | 2021-07-09 | 2024-03-08 | 램 리써치 코포레이션 | 실리콘-함유 막들의 플라즈마 강화 원자 층 증착 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050923A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | プラズマ表面処理方法 |
| JPS6265331A (ja) * | 1985-09-17 | 1987-03-24 | Hitachi Ltd | 銅もしくは銅合金のエツチング方法 |
| US5880033A (en) * | 1996-06-17 | 1999-03-09 | Applied Materials, Inc. | Method for etching metal silicide with high selectivity to polysilicon |
| JPH11135481A (ja) | 1997-10-28 | 1999-05-21 | Yamaha Corp | エッチング方法 |
| US6217704B1 (en) * | 1998-09-22 | 2001-04-17 | Canon Kabushiki Kaisha | Plasma processing apparatus |
| JP2000252259A (ja) * | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
| JP2002025986A (ja) * | 2000-07-06 | 2002-01-25 | Matsushita Electric Ind Co Ltd | ドライエッチング方法 |
| JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
| JP4402860B2 (ja) * | 2001-03-28 | 2010-01-20 | 忠弘 大見 | プラズマ処理装置 |
| JP4147017B2 (ja) * | 2001-10-19 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ基板処理装置 |
| JP2004119781A (ja) * | 2002-09-27 | 2004-04-15 | Sharp Corp | ドライエッチング方法 |
| JP2004273532A (ja) * | 2003-03-05 | 2004-09-30 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
-
2004
- 2004-11-29 JP JP2004344608A patent/JP4701691B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-18 KR KR1020077014786A patent/KR100910681B1/ko not_active Expired - Fee Related
- 2005-11-18 CN CN200580040949A patent/CN100580887C/zh not_active Expired - Fee Related
- 2005-11-18 WO PCT/JP2005/021256 patent/WO2006057202A1/ja not_active Ceased
- 2005-11-18 US US11/791,718 patent/US7842617B2/en not_active Expired - Fee Related
- 2005-11-29 TW TW094141915A patent/TWI385721B/zh not_active IP Right Cessation
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