JP6725176B2 - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
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- JP6725176B2 JP6725176B2 JP2016212459A JP2016212459A JP6725176B2 JP 6725176 B2 JP6725176 B2 JP 6725176B2 JP 2016212459 A JP2016212459 A JP 2016212459A JP 2016212459 A JP2016212459 A JP 2016212459A JP 6725176 B2 JP6725176 B2 JP 6725176B2
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- 238000000034 method Methods 0.000 title claims description 30
- 238000001020 plasma etching Methods 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 167
- 239000010937 tungsten Substances 0.000 claims description 40
- 229910052721 tungsten Inorganic materials 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 39
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 22
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 21
- -1 tungsten nitride Chemical class 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 37
- 239000000460 chlorine Substances 0.000 description 18
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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- ing And Chemical Polishing (AREA)
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Description
Claims (7)
- プラズマを用いてタングステンナイトライド膜(WN)をエッチングするプラズマエッチング方法において、
シリコン元素を含有するガスと、ハロゲン元素を含有するガスと、炭素元素と酸素元素を含有するガスと、を用いて前記タングステンナイトライド膜(WN)をエッチングすることを特徴とするプラズマエッチング方法。 - 請求項1に記載のプラズマエッチング方法において、
前記炭素元素と酸素元素を含有するガスは、COガス、CO2ガスまたはCOSガスであることを特徴とするプラズマエッチング方法。 - 請求項1または請求項2に記載のプラズマエッチング方法において、
前記ハロゲン元素を含有するガスは、Cl2ガス、BCl3ガス、HBrガスまたはHIガスであり、
前記シリコン元素を含有するガスは、SiF4ガスまたはSiCl4ガスであることを特徴とするプラズマエッチング方法。 - プラズマを用いてタングステンナイトライド膜(WN)をエッチングするプラズマエッチング方法において、
Cl2ガスとSiCl4ガスと酸素ガスとCOガスの混合ガス、Cl2ガスとSiCl4ガスと酸素ガスとCO2ガスの混合ガスまたはCl2ガスとSiCl4ガスと酸素ガスとCOSガスの混合ガスを用いて前記タングステンナイトライド膜(WN)をエッチングすることを特徴とするプラズマエッチング方法。 - タングステン元素を含有する膜をプラズマを用いてエッチングするプラズマエッチング方法において、
シリコン元素を含有するガスとハロゲン元素を含有するガスとCOSガスを用いて前記タングステン元素を含有する膜をエッチングすることを特徴とするプラズマエッチング方法。 - タングステン元素を含有する膜をプラズマを用いてエッチングするプラズマエッチング方法において、
シリコン元素を含有するガスと、ハロゲン元素を含有するガスと、炭素元素と酸素元素を含有するガスと、を用いて前記タングステン元素を含有する膜をエッチングし、
前記ハロゲン元素を含有するガスは、BCl 3 ガス、HBrガスまたはHIガスであることを特徴とするプラズマエッチング方法。 - タングステン元素を含有する膜をプラズマを用いてエッチングするプラズマエッチング方法において、
Cl 2 ガスとSiCl 4 ガスと酸素ガスとCOSガスの混合ガスを用いて前記タングステン元素を含有する膜をエッチングすることを特徴とするプラズマエッチング方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016212459A JP6725176B2 (ja) | 2016-10-31 | 2016-10-31 | プラズマエッチング方法 |
KR1020170101147A KR102148247B1 (ko) | 2016-10-31 | 2017-08-09 | 플라스마 에칭 방법 |
CN201710704465.9A CN108022838B (zh) | 2016-10-31 | 2017-08-16 | 等离子体蚀刻方法 |
TW106127962A TWI650814B (zh) | 2016-10-31 | 2017-08-17 | 電漿蝕刻方法 |
US15/701,692 US10229838B2 (en) | 2016-10-31 | 2017-09-12 | Plasma etching method |
KR1020200016802A KR102254447B1 (ko) | 2016-10-31 | 2020-02-12 | 플라스마 에칭 방법 |
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JP2016212459A JP6725176B2 (ja) | 2016-10-31 | 2016-10-31 | プラズマエッチング方法 |
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JP2018074006A5 JP2018074006A5 (ja) | 2019-04-04 |
JP6725176B2 true JP6725176B2 (ja) | 2020-07-15 |
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KR (2) | KR102148247B1 (ja) |
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US4793897A (en) * | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
US5545290A (en) * | 1987-07-09 | 1996-08-13 | Texas Instruments Incorporated | Etching method |
EP0299246A1 (en) * | 1987-07-16 | 1989-01-18 | Texas Instruments Incorporated | Processing apparatus and method |
JP3210359B2 (ja) * | 1991-05-29 | 2001-09-17 | 株式会社東芝 | ドライエッチング方法 |
JPH05289309A (ja) * | 1992-04-15 | 1993-11-05 | Fujitsu Ltd | レチクル及びその製造方法 |
JP2001053061A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Ltd | ドライエッチング方法 |
KR101108304B1 (ko) * | 2004-02-26 | 2012-01-25 | 노벨러스 시스템즈, 인코포레이티드 | 질화 텅스텐의 증착 |
JP4701691B2 (ja) * | 2004-11-29 | 2011-06-15 | 東京エレクトロン株式会社 | エッチング方法 |
US7563658B2 (en) * | 2004-12-27 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2006270030A (ja) * | 2005-02-28 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理方法、および後処理方法 |
US7754610B2 (en) | 2006-06-02 | 2010-07-13 | Applied Materials, Inc. | Process for etching tungsten silicide overlying polysilicon particularly in a flash memory |
KR101471354B1 (ko) * | 2007-11-07 | 2014-12-24 | 주식회사 에스앤에스텍 | 대면적 투과 제어 블랭마스크 및 이를 이용한 포토마스크의제조방법 |
CN102969240B (zh) * | 2007-11-21 | 2016-11-09 | 朗姆研究公司 | 控制对含钨层的蚀刻微负载的方法 |
JP5274993B2 (ja) * | 2007-12-03 | 2013-08-28 | 株式会社荏原製作所 | 研磨装置 |
JP2010135592A (ja) * | 2008-12-05 | 2010-06-17 | Elpida Memory Inc | 半導体装置及び半導体装置の製造方法 |
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TWI650814B (zh) | 2019-02-11 |
CN108022838A (zh) | 2018-05-11 |
KR20180048285A (ko) | 2018-05-10 |
TW201818467A (zh) | 2018-05-16 |
US10229838B2 (en) | 2019-03-12 |
KR102148247B1 (ko) | 2020-08-26 |
KR102254447B1 (ko) | 2021-05-24 |
CN108022838B (zh) | 2022-01-18 |
KR20200018547A (ko) | 2020-02-19 |
JP2018074006A (ja) | 2018-05-10 |
US20180122651A1 (en) | 2018-05-03 |
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