JP2006019413A5 - - Google Patents
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- Publication number
- JP2006019413A5 JP2006019413A5 JP2004194233A JP2004194233A JP2006019413A5 JP 2006019413 A5 JP2006019413 A5 JP 2006019413A5 JP 2004194233 A JP2004194233 A JP 2004194233A JP 2004194233 A JP2004194233 A JP 2004194233A JP 2006019413 A5 JP2006019413 A5 JP 2006019413A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- processing
- processed
- processing method
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000003672 processing method Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 4
- 230000007935 neutral effect Effects 0.000 claims 3
- 150000003254 radicals Chemical class 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004194233A JP4280686B2 (ja) | 2004-06-30 | 2004-06-30 | 処理方法 |
| US11/165,505 US20060003603A1 (en) | 2004-06-30 | 2005-06-24 | Method and apparatus for processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004194233A JP4280686B2 (ja) | 2004-06-30 | 2004-06-30 | 処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006019413A JP2006019413A (ja) | 2006-01-19 |
| JP2006019413A5 true JP2006019413A5 (enExample) | 2007-08-09 |
| JP4280686B2 JP4280686B2 (ja) | 2009-06-17 |
Family
ID=35514578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004194233A Expired - Fee Related JP4280686B2 (ja) | 2004-06-30 | 2004-06-30 | 処理方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20060003603A1 (enExample) |
| JP (1) | JP4280686B2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
| US7163877B2 (en) * | 2004-08-18 | 2007-01-16 | Tokyo Electron Limited | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing |
| US7695633B2 (en) * | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
| US20070246443A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation |
| US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US20070245958A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution |
| US7780864B2 (en) * | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
| US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
| US7727413B2 (en) * | 2006-04-24 | 2010-06-01 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
| US20070245961A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation |
| US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
| US7645357B2 (en) * | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
| WO2008021501A2 (en) * | 2006-08-18 | 2008-02-21 | Piero Sferlazzo | Apparatus and method for ultra-shallow implantation in a semiconductor device |
| US7851710B2 (en) * | 2006-09-05 | 2010-12-14 | Twinhead International Corp. | Waterproof and dustproof structure |
| JP5089121B2 (ja) * | 2006-09-29 | 2012-12-05 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法およびプラズマ処理装置 |
| US8012822B2 (en) * | 2007-12-27 | 2011-09-06 | Canon Kabushiki Kaisha | Process for forming dielectric films |
| JP2011071353A (ja) * | 2009-09-25 | 2011-04-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| DE102010056020B4 (de) * | 2009-12-23 | 2021-03-18 | Wilhelm Beckmann | Verfahren und Vorrichtung zum Ausbilden einer dielektrischen Schicht auf einem Substrat |
| DE102011100024A1 (de) * | 2011-04-29 | 2012-10-31 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren zum ausbilden einer schicht auf einem substrat |
| DE102011119013B4 (de) | 2011-11-21 | 2022-11-03 | Hq-Dielectrics Gmbh | Verfahren zum ausbilden einer dielektrischen schicht auf einem substrat |
| US9941126B2 (en) | 2013-06-19 | 2018-04-10 | Tokyo Electron Limited | Microwave plasma device |
| US9887277B2 (en) * | 2015-01-23 | 2018-02-06 | Applied Materials, Inc. | Plasma treatment on metal-oxide TFT |
| JP6534263B2 (ja) * | 2015-02-05 | 2019-06-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP2016225573A (ja) * | 2015-06-03 | 2016-12-28 | 株式会社東芝 | 基板処理装置および基板処理方法 |
| JP7025534B2 (ja) * | 2017-09-14 | 2022-02-24 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | シリコン含有膜堆積用の組成物及び方法 |
| CN108766887B (zh) | 2018-05-25 | 2019-07-30 | 中国科学院微电子研究所 | 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法 |
| CN108666206B (zh) * | 2018-05-25 | 2019-08-16 | 中国科学院微电子研究所 | 基于两步微波等离子体氧化的碳化硅氧化方法 |
| US11972943B2 (en) | 2019-09-20 | 2024-04-30 | Applied Materials, Inc. | Methods and apparatus for depositing dielectric material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974543A (en) * | 1986-02-28 | 1990-12-04 | Xerox Corporation | Apparatus for amorphous silicon film |
| KR930004115B1 (ko) * | 1988-10-31 | 1993-05-20 | 후지쓰 가부시끼가이샤 | 애싱(ashing)처리방법 및 장치 |
| JP2918860B2 (ja) * | 1997-01-20 | 1999-07-12 | 日本ピラー工業株式会社 | 鏡面体 |
| US6287988B1 (en) * | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
| US6800512B1 (en) * | 1999-09-16 | 2004-10-05 | Matsushita Electric Industrial Co., Ltd. | Method of forming insulating film and method of fabricating semiconductor device |
| CN100347832C (zh) * | 2001-01-25 | 2007-11-07 | 东京毅力科创株式会社 | 电子器件材料的制造方法 |
-
2004
- 2004-06-30 JP JP2004194233A patent/JP4280686B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-24 US US11/165,505 patent/US20060003603A1/en not_active Abandoned
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