JP2008091409A5 - - Google Patents
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- Publication number
- JP2008091409A5 JP2008091409A5 JP2006267742A JP2006267742A JP2008091409A5 JP 2008091409 A5 JP2008091409 A5 JP 2008091409A5 JP 2006267742 A JP2006267742 A JP 2006267742A JP 2006267742 A JP2006267742 A JP 2006267742A JP 2008091409 A5 JP2008091409 A5 JP 2008091409A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- plasma
- treatment step
- oxidation treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims 14
- 230000003647 oxidation Effects 0.000 claims 11
- 238000007254 oxidation reaction Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006267742A JP5089121B2 (ja) | 2006-09-29 | 2006-09-29 | シリコン酸化膜の形成方法およびプラズマ処理装置 |
| US12/443,044 US8003484B2 (en) | 2006-09-29 | 2007-09-28 | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
| PCT/JP2007/069041 WO2008038787A1 (en) | 2006-09-29 | 2007-09-28 | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
| CN2007800359879A CN101517716B (zh) | 2006-09-29 | 2007-09-28 | 硅氧化膜的形成方法、等离子体处理装置 |
| TW096136355A TW200834729A (en) | 2006-09-29 | 2007-09-28 | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
| KR1020097006183A KR101102690B1 (ko) | 2006-09-29 | 2007-09-28 | 실리콘 산화막의 형성 방법, 플라즈마 처리 장치 및 기억 매체 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006267742A JP5089121B2 (ja) | 2006-09-29 | 2006-09-29 | シリコン酸化膜の形成方法およびプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008091409A JP2008091409A (ja) | 2008-04-17 |
| JP2008091409A5 true JP2008091409A5 (enExample) | 2009-07-30 |
| JP5089121B2 JP5089121B2 (ja) | 2012-12-05 |
Family
ID=39230219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006267742A Expired - Fee Related JP5089121B2 (ja) | 2006-09-29 | 2006-09-29 | シリコン酸化膜の形成方法およびプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8003484B2 (enExample) |
| JP (1) | JP5089121B2 (enExample) |
| KR (1) | KR101102690B1 (enExample) |
| CN (1) | CN101517716B (enExample) |
| TW (1) | TW200834729A (enExample) |
| WO (1) | WO2008038787A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261217A (ja) * | 2005-03-15 | 2006-09-28 | Canon Anelva Corp | 薄膜形成方法 |
| JP5357487B2 (ja) | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置 |
| KR101120133B1 (ko) * | 2009-05-13 | 2012-03-23 | 가천대학교 산학협력단 | 탄성기질의 표면 상에서의 나노구조의 조절성 제조 |
| JP2011071353A (ja) * | 2009-09-25 | 2011-04-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| CN108666206B (zh) * | 2018-05-25 | 2019-08-16 | 中国科学院微电子研究所 | 基于两步微波等离子体氧化的碳化硅氧化方法 |
| CN108766887B (zh) * | 2018-05-25 | 2019-07-30 | 中国科学院微电子研究所 | 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法 |
| KR102516580B1 (ko) * | 2018-09-13 | 2023-03-30 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
| US11049731B2 (en) * | 2018-09-27 | 2021-06-29 | Applied Materials, Inc. | Methods for film modification |
| JP7500450B2 (ja) * | 2021-01-21 | 2024-06-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113410126B (zh) * | 2021-06-18 | 2024-03-08 | 上海华虹宏力半导体制造有限公司 | 热氧化工艺中自动调控硅氧化膜厚度的方法和系统 |
| JP7530878B2 (ja) * | 2021-09-30 | 2024-08-08 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5225036A (en) * | 1988-03-28 | 1993-07-06 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| JP2768685B2 (ja) * | 1988-03-28 | 1998-06-25 | 株式会社東芝 | 半導体装置の製造方法及びその装置 |
| US5756402A (en) * | 1992-12-28 | 1998-05-26 | Kabushiki Kaisha Toshiba | Method of etching silicon nitride film |
| US6214736B1 (en) * | 1998-10-15 | 2001-04-10 | Texas Instruments Incorporated | Silicon processing method |
| JP2000349285A (ja) | 1999-06-04 | 2000-12-15 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
| TWI235433B (en) * | 2002-07-17 | 2005-07-01 | Tokyo Electron Ltd | Oxide film forming method, oxide film forming apparatus and electronic device material |
| JP4280686B2 (ja) * | 2004-06-30 | 2009-06-17 | キヤノン株式会社 | 処理方法 |
| US20090053903A1 (en) * | 2004-08-31 | 2009-02-26 | Tokyo Electron Limited | Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium |
| JP5032056B2 (ja) * | 2005-07-25 | 2012-09-26 | 株式会社東芝 | 不揮発性半導体メモリ装置の製造方法 |
-
2006
- 2006-09-29 JP JP2006267742A patent/JP5089121B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-28 US US12/443,044 patent/US8003484B2/en not_active Expired - Fee Related
- 2007-09-28 TW TW096136355A patent/TW200834729A/zh unknown
- 2007-09-28 WO PCT/JP2007/069041 patent/WO2008038787A1/ja not_active Ceased
- 2007-09-28 CN CN2007800359879A patent/CN101517716B/zh not_active Expired - Fee Related
- 2007-09-28 KR KR1020097006183A patent/KR101102690B1/ko not_active Expired - Fee Related
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