JP2012072475A5 - - Google Patents

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Publication number
JP2012072475A5
JP2012072475A5 JP2010219947A JP2010219947A JP2012072475A5 JP 2012072475 A5 JP2012072475 A5 JP 2012072475A5 JP 2010219947 A JP2010219947 A JP 2010219947A JP 2010219947 A JP2010219947 A JP 2010219947A JP 2012072475 A5 JP2012072475 A5 JP 2012072475A5
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JP
Japan
Prior art keywords
gas
flow rate
film forming
sccm
film
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Application number
JP2010219947A
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English (en)
Japanese (ja)
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JP5476269B2 (ja
JP2012072475A (ja
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Application filed filed Critical
Priority to JP2010219947A priority Critical patent/JP5476269B2/ja
Priority claimed from JP2010219947A external-priority patent/JP5476269B2/ja
Priority to KR1020110098074A priority patent/KR101290957B1/ko
Priority to TW100134922A priority patent/TWI557263B/zh
Priority to CN201110303097.XA priority patent/CN102433546B/zh
Publication of JP2012072475A publication Critical patent/JP2012072475A/ja
Publication of JP2012072475A5 publication Critical patent/JP2012072475A5/ja
Application granted granted Critical
Publication of JP5476269B2 publication Critical patent/JP5476269B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010219947A 2010-09-29 2010-09-29 成膜方法及び成膜装置 Expired - Fee Related JP5476269B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010219947A JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置
KR1020110098074A KR101290957B1 (ko) 2010-09-29 2011-09-28 성막 방법 및 성막 장치
TW100134922A TWI557263B (zh) 2010-09-29 2011-09-28 Film forming method and film forming device
CN201110303097.XA CN102433546B (zh) 2010-09-29 2011-09-29 成膜方法和成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010219947A JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置

Publications (3)

Publication Number Publication Date
JP2012072475A JP2012072475A (ja) 2012-04-12
JP2012072475A5 true JP2012072475A5 (enExample) 2013-05-16
JP5476269B2 JP5476269B2 (ja) 2014-04-23

Family

ID=45981890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010219947A Expired - Fee Related JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置

Country Status (4)

Country Link
JP (1) JP5476269B2 (enExample)
KR (1) KR101290957B1 (enExample)
CN (1) CN102433546B (enExample)
TW (1) TWI557263B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
CN107093577A (zh) * 2017-04-17 2017-08-25 上海华虹宏力半导体制造有限公司 接触孔的制造方法
US11075105B2 (en) * 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
JP6777614B2 (ja) * 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7531351B2 (ja) * 2019-11-13 2024-08-09 東京エレクトロン株式会社 基板処理方法、基板処理装置、および基板処理システム
WO2021225091A1 (ja) * 2020-05-08 2021-11-11 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629236A (ja) * 1992-07-07 1994-02-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
TW554382B (en) * 1998-06-09 2003-09-21 Tokyo Electron Ltd Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device
JP4545433B2 (ja) * 2003-12-26 2010-09-15 東京エレクトロン株式会社 成膜方法
CN101325174B (zh) * 2004-04-09 2011-06-15 东京毅力科创株式会社 Ti膜及TiN膜的成膜方法以及接触结构
KR20090026186A (ko) * 2006-07-11 2009-03-11 도쿄엘렉트론가부시키가이샤 성막 방법, 클리닝 방법 및 성막 장치

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