JP2015500921A5 - - Google Patents

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Publication number
JP2015500921A5
JP2015500921A5 JP2014543775A JP2014543775A JP2015500921A5 JP 2015500921 A5 JP2015500921 A5 JP 2015500921A5 JP 2014543775 A JP2014543775 A JP 2014543775A JP 2014543775 A JP2014543775 A JP 2014543775A JP 2015500921 A5 JP2015500921 A5 JP 2015500921A5
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JP
Japan
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power
cathode
assembly
power source
value
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JP2014543775A
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English (en)
Japanese (ja)
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JP2015500921A (ja
JP6305929B2 (ja
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Priority claimed from PCT/EP2011/071425 external-priority patent/WO2013079108A1/en
Publication of JP2015500921A publication Critical patent/JP2015500921A/ja
Publication of JP2015500921A5 publication Critical patent/JP2015500921A5/ja
Application granted granted Critical
Publication of JP6305929B2 publication Critical patent/JP6305929B2/ja
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JP2014543775A 2011-11-30 2011-11-30 閉ループ制御 Active JP6305929B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/071425 WO2013079108A1 (en) 2011-11-30 2011-11-30 Closed loop control

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017196735A Division JP6596474B2 (ja) 2017-10-10 2017-10-10 閉ループ制御

Publications (3)

Publication Number Publication Date
JP2015500921A JP2015500921A (ja) 2015-01-08
JP2015500921A5 true JP2015500921A5 (enExample) 2015-02-26
JP6305929B2 JP6305929B2 (ja) 2018-04-04

Family

ID=45349469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014543775A Active JP6305929B2 (ja) 2011-11-30 2011-11-30 閉ループ制御

Country Status (7)

Country Link
US (1) US9758855B2 (enExample)
EP (1) EP2785892B1 (enExample)
JP (1) JP6305929B2 (enExample)
KR (2) KR20140097510A (enExample)
CN (1) CN103958723B (enExample)
TW (1) TWI592510B (enExample)
WO (1) WO2013079108A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101602517B1 (ko) 2008-08-04 2016-03-10 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 Pecvd를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법
KR20170048510A (ko) * 2014-09-01 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 재료를 증착하기 위한 어셈블리 및 방법
ES2900321T3 (es) 2014-12-05 2022-03-16 Agc Flat Glass Na Inc Fuente de plasma que utiliza un recubrimiento de reducción de macropartículas y procedimiento para usar una fuente de plasma que utiliza un recubrimiento de reducción de macropartículas para la deposición de recubrimientos de película delgada y modificación de superficies
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
DE102016116762B4 (de) * 2016-09-07 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
CN119742321A (zh) 2017-11-09 2025-04-01 应用材料公司 使用硫族化物对锂金属阳极的异位固体电解质界面改性
US11631840B2 (en) 2019-04-26 2023-04-18 Applied Materials, Inc. Surface protection of lithium metal anode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2821119C2 (de) 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
DE4106513C2 (de) 1991-03-01 2002-06-13 Unaxis Deutschland Holding Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens
US6106676A (en) 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
JP2002529600A (ja) 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
JP3866615B2 (ja) * 2002-05-29 2007-01-10 株式会社神戸製鋼所 反応性スパッタリング方法及び装置
DE102004006131B4 (de) 2004-02-07 2005-12-15 Applied Films Gmbh & Co. Kg Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze
JP2010229523A (ja) * 2009-03-27 2010-10-14 Bridgestone Corp 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜
DE102009061065A1 (de) 2009-06-26 2011-09-29 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron

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