TWI592510B - 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 - Google Patents

用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 Download PDF

Info

Publication number
TWI592510B
TWI592510B TW101144735A TW101144735A TWI592510B TW I592510 B TWI592510 B TW I592510B TW 101144735 A TW101144735 A TW 101144735A TW 101144735 A TW101144735 A TW 101144735A TW I592510 B TWI592510 B TW I592510B
Authority
TW
Taiwan
Prior art keywords
power supply
cathode
voltage
deposition
value
Prior art date
Application number
TW101144735A
Other languages
English (en)
Chinese (zh)
Other versions
TW201329279A (zh
Inventor
湯瑪士 德皮世奇
法蘭世裘瑟夫 海歐
曼弗瑞德 英格雷
佑維 赫瑪士
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=45349469&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI592510(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201329279A publication Critical patent/TW201329279A/zh
Application granted granted Critical
Publication of TWI592510B publication Critical patent/TWI592510B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
TW101144735A 2011-11-30 2012-11-29 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 TWI592510B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/071425 WO2013079108A1 (en) 2011-11-30 2011-11-30 Closed loop control

Publications (2)

Publication Number Publication Date
TW201329279A TW201329279A (zh) 2013-07-16
TWI592510B true TWI592510B (zh) 2017-07-21

Family

ID=45349469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144735A TWI592510B (zh) 2011-11-30 2012-11-29 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置

Country Status (7)

Country Link
US (1) US9758855B2 (enExample)
EP (1) EP2785892B1 (enExample)
JP (1) JP6305929B2 (enExample)
KR (2) KR20140097510A (enExample)
CN (1) CN103958723B (enExample)
TW (1) TWI592510B (enExample)
WO (1) WO2013079108A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101602517B1 (ko) 2008-08-04 2016-03-10 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 Ｐｅｃｖｄ를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법
KR20170048510A (ko) * 2014-09-01 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 재료를 증착하기 위한 어셈블리 및 방법
ES2900321T3 (es) 2014-12-05 2022-03-16 Agc Flat Glass Na Inc Fuente de plasma que utiliza un recubrimiento de reducción de macropartículas y procedimiento para usar una fuente de plasma que utiliza un recubrimiento de reducción de macropartículas para la deposición de recubrimientos de película delgada y modificación de superficies
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
DE102016116762B4 (de) * 2016-09-07 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
CN119742321A (zh) 2017-11-09 2025-04-01 应用材料公司 使用硫族化物对锂金属阳极的异位固体电解质界面改性
US11631840B2 (en) 2019-04-26 2023-04-18 Applied Materials, Inc. Surface protection of lithium metal anode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2821119C2 (de) 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
DE4106513C2 (de) 1991-03-01 2002-06-13 Unaxis Deutschland Holding Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens
US6106676A (en) 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
JP2002529600A (ja) 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
JP3866615B2 (ja) * 2002-05-29 2007-01-10 株式会社神戸製鋼所 反応性スパッタリング方法及び装置
DE102004006131B4 (de) 2004-02-07 2005-12-15 Applied Films Gmbh & Co. Kg Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze
JP2010229523A (ja) * 2009-03-27 2010-10-14 Bridgestone Corp 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜
DE102009061065A1 (de) 2009-06-26 2011-09-29 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron

Also Published As

Publication number Publication date
KR20180132975A (ko) 2018-12-12
US20150152542A1 (en) 2015-06-04
WO2013079108A1 (en) 2013-06-06
JP2015500921A (ja) 2015-01-08
KR20140097510A (ko) 2014-08-06
CN103958723A (zh) 2014-07-30
EP2785892A1 (en) 2014-10-08
TW201329279A (zh) 2013-07-16
US9758855B2 (en) 2017-09-12
EP2785892B1 (en) 2017-09-27
CN103958723B (zh) 2017-04-05
JP6305929B2 (ja) 2018-04-04

Similar Documents

Publication Publication Date Title
TW201329279A (zh) 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置
US9777362B2 (en) Electrode manufacturing apparatus for lithium ion capacitor
JP5081712B2 (ja) 成膜装置
CN103562431B (zh) 用于控制锂均匀度的改善的方法
CN105393333B (zh) 用于清洁柔性基板处理装置的处理腔室的方法和用于执行所述方法的装置以及用于其中的辊
CN108138302A (zh) 用于制造柔性层堆叠的方法和设备以及柔性层堆叠
JP5562723B2 (ja) 成膜方法、成膜装置、およびガスバリアフィルムの製造方法
CN117160802B (zh) 一种卷对卷柔性功能层制备装置和方法
JP5144393B2 (ja) プラズマｃｖｄ成膜方法およびプラズマｃｖｄ装置
JP6596474B2 (ja) 閉ループ制御
US20180135160A1 (en) Method for controlling a gas supply to a process chamber, controller for controlling a gas supply to a process chamber, and apparatus
JP2009209380A (ja) 成膜装置
CN112899635A (zh) 卧式光学连续磁控溅射镀膜设备
CN107075663A (zh) 用于在基板上沉积材料的组件和方法
JP2010095735A (ja) 成膜装置、成膜方法およびガスバリアフィルム
CN102443785B (zh) 功能性薄膜的制造方法
CN107532282A (zh) 制造用于显示器制造的层堆叠的方法和其设备
JP2017101270A (ja) 薄膜形成装置および薄膜形成方法
JP2014141707A (ja) 機能性フィルムの製造方法
JP2007186775A (ja) 成膜方法及び装置
JP2003155572A (ja) 真空成膜装置
JP2001237184A (ja) 基板処理方法及び基板処理装置
JPS6342372A (ja) イオンプレ−テイング装置のガス流量制御方法
TW201231694A (en) Deposition substrate, method for manufacturing the deposition substrate, and deposition device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees