TWI592510B - 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 - Google Patents
用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 Download PDFInfo
- Publication number
- TWI592510B TWI592510B TW101144735A TW101144735A TWI592510B TW I592510 B TWI592510 B TW I592510B TW 101144735 A TW101144735 A TW 101144735A TW 101144735 A TW101144735 A TW 101144735A TW I592510 B TWI592510 B TW I592510B
- Authority
- TW
- Taiwan
- Prior art keywords
- power supply
- cathode
- voltage
- deposition
- value
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 73
- 230000008021 deposition Effects 0.000 title claims description 63
- 238000005137 deposition process Methods 0.000 title claims description 46
- 238000000151 deposition Methods 0.000 claims description 67
- 239000007789 gas Substances 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 39
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 18
- 238000012544 monitoring process Methods 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/071425 WO2013079108A1 (en) | 2011-11-30 | 2011-11-30 | Closed loop control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201329279A TW201329279A (zh) | 2013-07-16 |
| TWI592510B true TWI592510B (zh) | 2017-07-21 |
Family
ID=45349469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101144735A TWI592510B (zh) | 2011-11-30 | 2012-11-29 | 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9758855B2 (enExample) |
| EP (1) | EP2785892B1 (enExample) |
| JP (1) | JP6305929B2 (enExample) |
| KR (2) | KR20180132975A (enExample) |
| CN (1) | CN103958723B (enExample) |
| TW (1) | TWI592510B (enExample) |
| WO (1) | WO2013079108A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EA020763B9 (ru) | 2008-08-04 | 2015-05-29 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
| WO2016034197A1 (en) * | 2014-09-01 | 2016-03-10 | Applied Materials, Inc. | Assembly and method for deposition of material on a substrate |
| BR112017011612A2 (pt) | 2014-12-05 | 2018-01-16 | Agc Glass Europe, S.A | fonte de plasma de cátodo oco |
| EP3228161B1 (en) | 2014-12-05 | 2021-11-03 | AGC Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
| US9721765B2 (en) * | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| DE102016116762B4 (de) * | 2016-09-07 | 2021-11-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung |
| KR102643656B1 (ko) | 2017-11-09 | 2024-03-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 리튬 금속 애노드에 대해 칼코게나이드들을 사용하는 엑스-시튜 고체 전해질 계면 개질 |
| US11631840B2 (en) | 2019-04-26 | 2023-04-18 | Applied Materials, Inc. | Surface protection of lithium metal anode |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2821119C2 (de) | 1978-05-13 | 1983-08-25 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage |
| US4201645A (en) | 1978-06-26 | 1980-05-06 | Robert J. Ferran | Closed-loop sputtering system and method of operating same |
| DE4106513C2 (de) * | 1991-03-01 | 2002-06-13 | Unaxis Deutschland Holding | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens |
| US6106676A (en) | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
| WO2000028104A1 (en) | 1998-11-06 | 2000-05-18 | Scivac | Sputtering apparatus and process for high rate coatings |
| US6537428B1 (en) * | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
| JP3866615B2 (ja) * | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | 反応性スパッタリング方法及び装置 |
| DE102004006131B4 (de) | 2004-02-07 | 2005-12-15 | Applied Films Gmbh & Co. Kg | Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze |
| JP2010229523A (ja) * | 2009-03-27 | 2010-10-14 | Bridgestone Corp | 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜 |
| DE102009053756B4 (de) | 2009-06-26 | 2011-07-21 | VON ARDENNE Anlagentechnik GmbH, 01324 | Verfahren zur Beschichtung eines Substrates in einer Vakuumkammer mit mindestens einem rotierenden Magnetron |
-
2011
- 2011-11-30 JP JP2014543775A patent/JP6305929B2/ja active Active
- 2011-11-30 EP EP11796945.1A patent/EP2785892B1/en not_active Revoked
- 2011-11-30 CN CN201180075166.4A patent/CN103958723B/zh active Active
- 2011-11-30 US US14/357,168 patent/US9758855B2/en not_active Expired - Fee Related
- 2011-11-30 WO PCT/EP2011/071425 patent/WO2013079108A1/en not_active Ceased
- 2011-11-30 KR KR1020187035066A patent/KR20180132975A/ko not_active Ceased
- 2011-11-30 KR KR1020147017890A patent/KR20140097510A/ko not_active Ceased
-
2012
- 2012-11-29 TW TW101144735A patent/TWI592510B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6305929B2 (ja) | 2018-04-04 |
| KR20140097510A (ko) | 2014-08-06 |
| CN103958723A (zh) | 2014-07-30 |
| JP2015500921A (ja) | 2015-01-08 |
| US20150152542A1 (en) | 2015-06-04 |
| WO2013079108A1 (en) | 2013-06-06 |
| EP2785892B1 (en) | 2017-09-27 |
| CN103958723B (zh) | 2017-04-05 |
| KR20180132975A (ko) | 2018-12-12 |
| TW201329279A (zh) | 2013-07-16 |
| EP2785892A1 (en) | 2014-10-08 |
| US9758855B2 (en) | 2017-09-12 |
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