TWI592510B - 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 - Google Patents

用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 Download PDF

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Publication number
TWI592510B
TWI592510B TW101144735A TW101144735A TWI592510B TW I592510 B TWI592510 B TW I592510B TW 101144735 A TW101144735 A TW 101144735A TW 101144735 A TW101144735 A TW 101144735A TW I592510 B TWI592510 B TW I592510B
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TW
Taiwan
Prior art keywords
power supply
cathode
voltage
deposition
value
Prior art date
Application number
TW101144735A
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English (en)
Chinese (zh)
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TW201329279A (zh
Inventor
湯瑪士 德皮世奇
法蘭世裘瑟夫 海歐
曼弗瑞德 英格雷
佑維 赫瑪士
Original Assignee
應用材料股份有限公司
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
TW101144735A 2011-11-30 2012-11-29 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置 TWI592510B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/071425 WO2013079108A1 (en) 2011-11-30 2011-11-30 Closed loop control

Publications (2)

Publication Number Publication Date
TW201329279A TW201329279A (zh) 2013-07-16
TWI592510B true TWI592510B (zh) 2017-07-21

Family

ID=45349469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144735A TWI592510B (zh) 2011-11-30 2012-11-29 用於反應性沉積製程之閉迴路控制組件及其控制方法與沉積裝置

Country Status (7)

Country Link
US (1) US9758855B2 (enExample)
EP (1) EP2785892B1 (enExample)
JP (1) JP6305929B2 (enExample)
KR (2) KR20180132975A (enExample)
CN (1) CN103958723B (enExample)
TW (1) TWI592510B (enExample)
WO (1) WO2013079108A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105154856B (zh) 2008-08-04 2018-08-10 北美Agc平板玻璃公司 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
JP2017525853A (ja) * 2014-09-01 2017-09-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 材料を基板上に堆積するためのアセンブリ及び方法
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
CN107615888B (zh) 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
DE102016116762B4 (de) * 2016-09-07 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
CN119742321A (zh) 2017-11-09 2025-04-01 应用材料公司 使用硫族化物对锂金属阳极的异位固体电解质界面改性
US11631840B2 (en) 2019-04-26 2023-04-18 Applied Materials, Inc. Surface protection of lithium metal anode

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
DE2821119C2 (de) 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4201645A (en) 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
DE4106513C2 (de) 1991-03-01 2002-06-13 Unaxis Deutschland Holding Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
US6365010B1 (en) 1998-11-06 2002-04-02 Scivac Sputtering apparatus and process for high rate coatings
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
JP3866615B2 (ja) 2002-05-29 2007-01-10 株式会社神戸製鋼所 反応性スパッタリング方法及び装置
DE102004006131B4 (de) 2004-02-07 2005-12-15 Applied Films Gmbh & Co. Kg Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze
JP2010229523A (ja) * 2009-03-27 2010-10-14 Bridgestone Corp 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜
DE102009053756B4 (de) 2009-06-26 2011-07-21 VON ARDENNE Anlagentechnik GmbH, 01324 Verfahren zur Beschichtung eines Substrates in einer Vakuumkammer mit mindestens einem rotierenden Magnetron

Also Published As

Publication number Publication date
US9758855B2 (en) 2017-09-12
WO2013079108A1 (en) 2013-06-06
TW201329279A (zh) 2013-07-16
KR20140097510A (ko) 2014-08-06
EP2785892A1 (en) 2014-10-08
US20150152542A1 (en) 2015-06-04
CN103958723B (zh) 2017-04-05
CN103958723A (zh) 2014-07-30
EP2785892B1 (en) 2017-09-27
KR20180132975A (ko) 2018-12-12
JP2015500921A (ja) 2015-01-08
JP6305929B2 (ja) 2018-04-04

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