KR20180132975A - 폐쇄 루프 제어 - Google Patents
폐쇄 루프 제어 Download PDFInfo
- Publication number
- KR20180132975A KR20180132975A KR1020187035066A KR20187035066A KR20180132975A KR 20180132975 A KR20180132975 A KR 20180132975A KR 1020187035066 A KR1020187035066 A KR 1020187035066A KR 20187035066 A KR20187035066 A KR 20187035066A KR 20180132975 A KR20180132975 A KR 20180132975A
- Authority
- KR
- South Korea
- Prior art keywords
- power
- cathode
- voltage
- deposition
- closed loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000005137 deposition process Methods 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 38
- 230000001276 controlling effect Effects 0.000 claims abstract description 14
- 230000002596 correlated effect Effects 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 67
- 230000008021 deposition Effects 0.000 claims description 63
- 239000007789 gas Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 230000007704 transition Effects 0.000 claims description 18
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims 2
- 238000000429 assembly Methods 0.000 abstract description 11
- 230000000712 assembly Effects 0.000 abstract description 11
- 230000000875 corresponding effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/071425 WO2013079108A1 (en) | 2011-11-30 | 2011-11-30 | Closed loop control |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147017890A Division KR20140097510A (ko) | 2011-11-30 | 2011-11-30 | 폐쇄 루프 제어 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180132975A true KR20180132975A (ko) | 2018-12-12 |
Family
ID=45349469
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187035066A Ceased KR20180132975A (ko) | 2011-11-30 | 2011-11-30 | 폐쇄 루프 제어 |
| KR1020147017890A Ceased KR20140097510A (ko) | 2011-11-30 | 2011-11-30 | 폐쇄 루프 제어 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147017890A Ceased KR20140097510A (ko) | 2011-11-30 | 2011-11-30 | 폐쇄 루프 제어 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9758855B2 (enExample) |
| EP (1) | EP2785892B1 (enExample) |
| JP (1) | JP6305929B2 (enExample) |
| KR (2) | KR20180132975A (enExample) |
| CN (1) | CN103958723B (enExample) |
| TW (1) | TWI592510B (enExample) |
| WO (1) | WO2013079108A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206496B (zh) | 2008-08-04 | 2019-07-05 | 北美Agc平板玻璃公司 | 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法 |
| WO2016034197A1 (en) * | 2014-09-01 | 2016-03-10 | Applied Materials, Inc. | Assembly and method for deposition of material on a substrate |
| ES2883288T3 (es) | 2014-12-05 | 2021-12-07 | Agc Glass Europe Sa | Fuente de plasma de cátodo hueco |
| CN107615888B (zh) | 2014-12-05 | 2022-01-04 | 北美Agc平板玻璃公司 | 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法 |
| US9721765B2 (en) * | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| DE102016116762B4 (de) * | 2016-09-07 | 2021-11-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung |
| WO2019094121A1 (en) | 2017-11-09 | 2019-05-16 | Applied Materials, Inc. | Ex-situ solid electrolyte interface modification using chalcogenides for lithium metal anode |
| US11631840B2 (en) | 2019-04-26 | 2023-04-18 | Applied Materials, Inc. | Surface protection of lithium metal anode |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2821119C2 (de) | 1978-05-13 | 1983-08-25 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage |
| US4201645A (en) * | 1978-06-26 | 1980-05-06 | Robert J. Ferran | Closed-loop sputtering system and method of operating same |
| DE4106513C2 (de) | 1991-03-01 | 2002-06-13 | Unaxis Deutschland Holding | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens |
| US6106676A (en) | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
| WO2000028104A1 (en) | 1998-11-06 | 2000-05-18 | Scivac | Sputtering apparatus and process for high rate coatings |
| US6537428B1 (en) * | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
| JP3866615B2 (ja) * | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | 反応性スパッタリング方法及び装置 |
| DE102004006131B4 (de) | 2004-02-07 | 2005-12-15 | Applied Films Gmbh & Co. Kg | Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze |
| JP2010229523A (ja) * | 2009-03-27 | 2010-10-14 | Bridgestone Corp | 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜 |
| DE102009053756B4 (de) | 2009-06-26 | 2011-07-21 | VON ARDENNE Anlagentechnik GmbH, 01324 | Verfahren zur Beschichtung eines Substrates in einer Vakuumkammer mit mindestens einem rotierenden Magnetron |
-
2011
- 2011-11-30 EP EP11796945.1A patent/EP2785892B1/en not_active Revoked
- 2011-11-30 KR KR1020187035066A patent/KR20180132975A/ko not_active Ceased
- 2011-11-30 JP JP2014543775A patent/JP6305929B2/ja active Active
- 2011-11-30 KR KR1020147017890A patent/KR20140097510A/ko not_active Ceased
- 2011-11-30 US US14/357,168 patent/US9758855B2/en not_active Expired - Fee Related
- 2011-11-30 WO PCT/EP2011/071425 patent/WO2013079108A1/en not_active Ceased
- 2011-11-30 CN CN201180075166.4A patent/CN103958723B/zh active Active
-
2012
- 2012-11-29 TW TW101144735A patent/TWI592510B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2785892B1 (en) | 2017-09-27 |
| WO2013079108A1 (en) | 2013-06-06 |
| JP6305929B2 (ja) | 2018-04-04 |
| CN103958723A (zh) | 2014-07-30 |
| US9758855B2 (en) | 2017-09-12 |
| CN103958723B (zh) | 2017-04-05 |
| EP2785892A1 (en) | 2014-10-08 |
| TWI592510B (zh) | 2017-07-21 |
| JP2015500921A (ja) | 2015-01-08 |
| TW201329279A (zh) | 2013-07-16 |
| US20150152542A1 (en) | 2015-06-04 |
| KR20140097510A (ko) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9758855B2 (en) | Closed loop control | |
| US11680322B2 (en) | Method for forming a laminated film on a substrate | |
| FR2908009B1 (fr) | Procede et dispositif de regulation d'alimentation electrique d'un magnetron, et installation de traitement de recipients thermoplastiques qui en fait application | |
| JP2006249471A (ja) | 成膜方法 | |
| JP6596474B2 (ja) | 閉ループ制御 | |
| US8992742B2 (en) | Method for coating a substrate in a vacuum chamber having a rotating magnetron | |
| US6783640B2 (en) | Sputtering method and sputtering apparatus | |
| CN116334600A (zh) | 一种磁增强pecvd卷绕镀膜的生产装置和生产方法 | |
| CN215050676U (zh) | 一种多功能真空镀膜设备 | |
| US20180135160A1 (en) | Method for controlling a gas supply to a process chamber, controller for controlling a gas supply to a process chamber, and apparatus | |
| Strümpfel et al. | Reactive dual magnetron sputtering of oxides for large area production of optical multilayers | |
| JP7572997B2 (ja) | 真空処理装置及び真空処理方法 | |
| CN107075663A (zh) | 用于在基板上沉积材料的组件和方法 | |
| CN111699277B (zh) | 沉积设备、涂覆柔性基板的方法和具有涂层的柔性基板 | |
| US6456483B1 (en) | Electrodes for electrolytic capacitors and production process thereof | |
| CN102443785B (zh) | 功能性薄膜的制造方法 | |
| JP2015074790A (ja) | プラズマ処理装置および処理方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20181203 Application number text: 1020147017890 Filing date: 20140627 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20190102 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20190305 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20200302 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20190305 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |