JP6305929B2 - 閉ループ制御 - Google Patents

閉ループ制御 Download PDF

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Publication number
JP6305929B2
JP6305929B2 JP2014543775A JP2014543775A JP6305929B2 JP 6305929 B2 JP6305929 B2 JP 6305929B2 JP 2014543775 A JP2014543775 A JP 2014543775A JP 2014543775 A JP2014543775 A JP 2014543775A JP 6305929 B2 JP6305929 B2 JP 6305929B2
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JP
Japan
Prior art keywords
power
voltage
deposition
cathode
power source
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Active
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JP2014543775A
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English (en)
Japanese (ja)
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JP2015500921A (ja
JP2015500921A5 (enExample
Inventor
トーマス デピッシュ，
トーマス デピッシュ，
フランツ−ヨーゼフ ヘレ，
フランツ−ヨーゼフ ヘレ，
マンフレート アングレール，
マンフレート アングレール，
ウーヴェ ヘルマンス，
ウーヴェ ヘルマンス，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2015500921A5 publication Critical patent/JP2015500921A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014543775A 2011-11-30 2011-11-30 閉ループ制御 Active JP6305929B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/071425 WO2013079108A1 (en) 2011-11-30 2011-11-30 Closed loop control

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017196735A Division JP6596474B2 (ja) 2017-10-10 2017-10-10 閉ループ制御

Publications (3)

Publication Number Publication Date
JP2015500921A JP2015500921A (ja) 2015-01-08
JP2015500921A5 JP2015500921A5 (enExample) 2015-02-26
JP6305929B2 true JP6305929B2 (ja) 2018-04-04

Family

ID=45349469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014543775A Active JP6305929B2 (ja) 2011-11-30 2011-11-30 閉ループ制御

Country Status (7)

Country Link
US (1) US9758855B2 (enExample)
EP (1) EP2785892B1 (enExample)
JP (1) JP6305929B2 (enExample)
KR (2) KR20140097510A (enExample)
CN (1) CN103958723B (enExample)
TW (1) TWI592510B (enExample)
WO (1) WO2013079108A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101602517B1 (ko) 2008-08-04 2016-03-10 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 Ｐｅｃｖｄ를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법
KR20170048510A (ko) * 2014-09-01 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 재료를 증착하기 위한 어셈블리 및 방법
ES2900321T3 (es) 2014-12-05 2022-03-16 Agc Flat Glass Na Inc Fuente de plasma que utiliza un recubrimiento de reducción de macropartículas y procedimiento para usar una fuente de plasma que utiliza un recubrimiento de reducción de macropartículas para la deposición de recubrimientos de película delgada y modificación de superficies
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
DE102016116762B4 (de) * 2016-09-07 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
CN119742321A (zh) 2017-11-09 2025-04-01 应用材料公司 使用硫族化物对锂金属阳极的异位固体电解质界面改性
US11631840B2 (en) 2019-04-26 2023-04-18 Applied Materials, Inc. Surface protection of lithium metal anode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2821119C2 (de) 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
DE4106513C2 (de) 1991-03-01 2002-06-13 Unaxis Deutschland Holding Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens
US6106676A (en) 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
JP2002529600A (ja) 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
JP3866615B2 (ja) * 2002-05-29 2007-01-10 株式会社神戸製鋼所 反応性スパッタリング方法及び装置
DE102004006131B4 (de) 2004-02-07 2005-12-15 Applied Films Gmbh & Co. Kg Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze
JP2010229523A (ja) * 2009-03-27 2010-10-14 Bridgestone Corp 導電性透明化合物薄膜の成膜方法および導電性透明化合物薄膜
DE102009061065A1 (de) 2009-06-26 2011-09-29 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron

Also Published As

Publication number Publication date
KR20180132975A (ko) 2018-12-12
US20150152542A1 (en) 2015-06-04
WO2013079108A1 (en) 2013-06-06
JP2015500921A (ja) 2015-01-08
KR20140097510A (ko) 2014-08-06
CN103958723A (zh) 2014-07-30
EP2785892A1 (en) 2014-10-08
TWI592510B (zh) 2017-07-21
TW201329279A (zh) 2013-07-16
US9758855B2 (en) 2017-09-12
EP2785892B1 (en) 2017-09-27
CN103958723B (zh) 2017-04-05

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