JP2011134927A5 - - Google Patents

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Publication number
JP2011134927A5
JP2011134927A5 JP2009293839A JP2009293839A JP2011134927A5 JP 2011134927 A5 JP2011134927 A5 JP 2011134927A5 JP 2009293839 A JP2009293839 A JP 2009293839A JP 2009293839 A JP2009293839 A JP 2009293839A JP 2011134927 A5 JP2011134927 A5 JP 2011134927A5
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Japan
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unit
power supply
frequency
voltage
supply unit
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JP2009293839A
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English (en)
Japanese (ja)
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JP5397215B2 (ja
JP2011134927A (ja
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Priority claimed from JP2009293839A external-priority patent/JP5397215B2/ja
Priority to JP2009293839A priority Critical patent/JP5397215B2/ja
Priority to TW99139808A priority patent/TWI469214B/zh
Priority to KR1020100122501A priority patent/KR20110074665A/ko
Priority to US12/962,816 priority patent/US8649893B2/en
Priority to CN201010593711.6A priority patent/CN102136412B/zh
Publication of JP2011134927A publication Critical patent/JP2011134927A/ja
Publication of JP2011134927A5 publication Critical patent/JP2011134927A5/ja
Publication of JP5397215B2 publication Critical patent/JP5397215B2/ja
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JP2009293839A 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム Active JP5397215B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
TW99139808A TWI469214B (zh) 2009-12-25 2010-11-18 半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式
KR1020100122501A KR20110074665A (ko) 2009-12-25 2010-12-03 반도체 제조 장치, 반도체 장치의 제조 방법, 시뮬레이션 장치 및 시뮬레이션 프로그램
US12/962,816 US8649893B2 (en) 2009-12-25 2010-12-08 Semiconductor manufacturing device, semiconductor device manufacturing method, simulation device, and simulation program
CN201010593711.6A CN102136412B (zh) 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Publications (3)

Publication Number Publication Date
JP2011134927A JP2011134927A (ja) 2011-07-07
JP2011134927A5 true JP2011134927A5 (enExample) 2013-02-14
JP5397215B2 JP5397215B2 (ja) 2014-01-22

Family

ID=44188478

Family Applications (1)

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JP2009293839A Active JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Country Status (5)

Country Link
US (1) US8649893B2 (enExample)
JP (1) JP5397215B2 (enExample)
KR (1) KR20110074665A (enExample)
CN (1) CN102136412B (enExample)
TW (1) TWI469214B (enExample)

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US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
US11233593B2 (en) * 2018-12-11 2022-01-25 At&T Intellectual Property I, L.P. Signal strength prediction based on line of sight analysis
US11840757B2 (en) * 2020-07-08 2023-12-12 Tdk Corporation Film deposition system, factory system, and method of depositing film on wafer

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