CN102136412B - 半导体制造装置和半导体器件制造方法 - Google Patents

半导体制造装置和半导体器件制造方法 Download PDF

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Publication number
CN102136412B
CN102136412B CN201010593711.6A CN201010593711A CN102136412B CN 102136412 B CN102136412 B CN 102136412B CN 201010593711 A CN201010593711 A CN 201010593711A CN 102136412 B CN102136412 B CN 102136412B
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China
Prior art keywords
sticking probability
value
chamber
probability
particle density
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Expired - Fee Related
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CN201010593711.6A
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English (en)
Chinese (zh)
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CN102136412A (zh
Inventor
久保井信行
辰巳哲也
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Sony Corp
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Sony Corp
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Publication of CN102136412A publication Critical patent/CN102136412A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN201010593711.6A 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法 Expired - Fee Related CN102136412B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-293839 2009-12-25
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Publications (2)

Publication Number Publication Date
CN102136412A CN102136412A (zh) 2011-07-27
CN102136412B true CN102136412B (zh) 2014-10-08

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CN201010593711.6A Expired - Fee Related CN102136412B (zh) 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法

Country Status (5)

Country Link
US (1) US8649893B2 (enExample)
JP (1) JP5397215B2 (enExample)
KR (1) KR20110074665A (enExample)
CN (1) CN102136412B (enExample)
TW (1) TWI469214B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802069B2 (ja) * 2011-06-30 2015-10-28 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
US11233593B2 (en) * 2018-12-11 2022-01-25 At&T Intellectual Property I, L.P. Signal strength prediction based on line of sight analysis
US11840757B2 (en) * 2020-07-08 2023-12-12 Tdk Corporation Film deposition system, factory system, and method of depositing film on wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1641841A (zh) * 2004-01-08 2005-07-20 东京毅力科创株式会社 等离子体处理方法和等离子体装置
CN1820362A (zh) * 2003-05-16 2006-08-16 东京毅力科创株式会社 处理系统健康指数及其使用方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5904800A (en) * 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JP4095246B2 (ja) * 1997-07-22 2008-06-04 松下電器産業株式会社 半導体装置の製造方法
JPH1187247A (ja) * 1997-09-02 1999-03-30 Matsushita Electron Corp 半導体装置の製造装置及びその製造方法
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6106634A (en) * 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
CN100371491C (zh) * 1999-08-17 2008-02-27 东京电子株式会社 脉冲等离子体处理方法及其设备
US6432255B1 (en) * 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
US6786935B1 (en) * 2000-03-10 2004-09-07 Applied Materials, Inc. Vacuum processing system for producing components
JP2002110635A (ja) * 2000-10-03 2002-04-12 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4213871B2 (ja) * 2001-02-01 2009-01-21 株式会社日立製作所 半導体装置の製造方法
US20030037801A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Method for increasing the efficiency of substrate processing chamber contamination detection
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
JP3905466B2 (ja) * 2002-12-05 2007-04-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
WO2004095502A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited Plasma processing system and method
JP4754196B2 (ja) * 2003-08-25 2011-08-24 東京エレクトロン株式会社 減圧処理室内の部材清浄化方法および基板処理装置
US8608422B2 (en) * 2003-10-08 2013-12-17 Tokyo Electron Limited Particle sticking prevention apparatus and plasma processing apparatus
KR100672820B1 (ko) * 2004-11-12 2007-01-22 삼성전자주식회사 플라즈마를 사용한 피처리체의 처리 방법
KR100887271B1 (ko) * 2004-12-17 2009-03-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2006216710A (ja) * 2005-02-02 2006-08-17 Hitachi High-Technologies Corp 半導体製造装置
JP2007073751A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
KR100978407B1 (ko) * 2006-03-06 2010-08-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4674177B2 (ja) * 2006-03-15 2011-04-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7799138B2 (en) * 2006-06-22 2010-09-21 Hitachi Global Storage Technologies Netherlands In-situ method to reduce particle contamination in a vacuum plasma processing tool
US8075952B2 (en) * 2006-06-29 2011-12-13 Applied Materials, Inc. Power loading substrates to reduce particle contamination
US20080142481A1 (en) * 2006-12-18 2008-06-19 White John M In-situ particle collector
JP4959457B2 (ja) * 2007-07-26 2012-06-20 東京エレクトロン株式会社 基板搬送モジュール及び基板処理システム
JP5010414B2 (ja) * 2007-09-26 2012-08-29 東京エレクトロン株式会社 基板処理システム，基板処理装置の制御方法，およびプログラム
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1820362A (zh) * 2003-05-16 2006-08-16 东京毅力科创株式会社 处理系统健康指数及其使用方法
CN1641841A (zh) * 2004-01-08 2005-07-20 东京毅力科创株式会社 等离子体处理方法和等离子体装置

Also Published As

Publication number Publication date
TWI469214B (zh) 2015-01-11
TW201126599A (en) 2011-08-01
KR20110074665A (ko) 2011-07-01
CN102136412A (zh) 2011-07-27
US8649893B2 (en) 2014-02-11
JP2011134927A (ja) 2011-07-07
JP5397215B2 (ja) 2014-01-22
US20110160889A1 (en) 2011-06-30

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