JP5476269B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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- JP5476269B2 JP5476269B2 JP2010219947A JP2010219947A JP5476269B2 JP 5476269 B2 JP5476269 B2 JP 5476269B2 JP 2010219947 A JP2010219947 A JP 2010219947A JP 2010219947 A JP2010219947 A JP 2010219947A JP 5476269 B2 JP5476269 B2 JP 5476269B2
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- 238000000034 method Methods 0.000 title claims description 53
- 238000006243 chemical reaction Methods 0.000 claims description 114
- 239000010936 titanium Substances 0.000 claims description 98
- 238000012545 processing Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 71
- 230000015572 biosynthetic process Effects 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 26
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 238000005137 deposition process Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 235
- 238000005755 formation reaction Methods 0.000 description 52
- 229910004298 SiO 2 Inorganic materials 0.000 description 28
- 238000005530 etching Methods 0.000 description 25
- 238000002474 experimental method Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 229910008484 TiSi Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910008486 TiSix Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009789 rate limiting process Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明の実施形態にかかる成膜方法を実施可能な成膜装置の構成例を図面を参照しながら説明する。図1は本実施形態にかかる成膜装置の概略構成を示す図である。ここでの成膜装置100は,プラズマCVD(PECVD:plasma−enhanced chemical vapor deposition)によって被処理基板としてのSi基板W上にTi膜を成膜するプラズマCVD装置として構成した場合を例に挙げる。
次に,このような本実施形態にかかる成膜装置100により実行される成膜処理について説明する。図2A,図2Bは,本実施形態にかかる成膜処理を説明するための工程図である。成膜装置100は,例えば図2Aに示すような膜構造を有するSi基板200に対して処理を行う。Si基板200は,Si基材202上にSiO2膜などの層間絶縁膜204を形成し,エッチングによりコンタクトホール205を形成し,コンタクトホール205の底部にSi表面203を露出させたものである。
先ず,反応律速領域のH2ガス流量依存性を評価する実験を行った結果について説明する。この実験では,H2ガスの流量を30sccm〜100sccmの間で変化させて,それぞれのH2ガスの流量で図6の場合と同様にベア基板のSiO2膜上にTi膜の成膜処理を行って成膜レートを求めた。なお,他の処理条件は図5に示す実験のときと同様である。
次に,反応律速領域の処理室内圧力依存性を評価する実験を行った結果について説明する。この実験では,RFパワー1000Wのときに処理室111内の圧力を400Pa,500Pa,666Paに変化させて,それぞれの圧力でTiCl4ガスの流量を12sccm〜80sccmの間で変化させて図6の場合と同様にベア基板のSiO2膜上にTi膜の成膜処理を行って成膜レートを求めた。また,RFパワー800Wのときに処理室111内の圧力を500Pa,666Paに変化させて上記と同様の成膜処理を行って成膜レートを求めた。なお,他の処理条件は図5に示す実験のときと同様である。
次に,反応律速領域のRFパワー依存性の評価する実験を行った結果について説明する。
この実験では,H2ガスの流量を100sccmに固定して,高周波電源143のRFパワーを500W,800W,1000W,1200Wに変化させて図6の場合と同様にベア基板のSiO2膜上にTi膜の成膜処理を行って成膜レートを求めた。また,H2ガスを30sccmに固定して,RFパワーを500W,800Wに変化させて上記の場合と同様にベア基板のSiO2膜上にTi膜の成膜処理を行って成膜レートを求めた。なお,他の処理条件は図5に示す実験のときと同様である。
111 処理室
111A 天壁
111B 底壁
111C 側壁
112 サセプタ
113 支持部材
114 ガイドリング
115 ヒータ
116 下部電極
117 円形の穴
118 搬入出口
119 絶縁部材
120 シャワーヘッド
121 ベース部材
122 シャワープレート
123 ヒータ
124 吐出孔
125 ガス拡散空間
126 ガス導入ポート
130 ガス供給手段
131〜133 各ガス供給源
131C〜133C マスフローコントローラ
131V〜133V バルブ
131L〜133L 各ガス供給ライン
137 ガス混合部
138 混合ガス供給ライン
140,141 ヒータ電源
142 整合器
143 高周波電源
150 排気室
151 排気管
152 排気装置
160 支持ピン
161 支持板
162 駆動機構
190 制御部
192 操作部
194 記憶部
200,W Si基板
202 Si基材
203 Si表面
204 層間絶縁膜
205 コンタクトホール
Claims (7)
- 処理室内にチタン含有成膜ガスと還元ガスを含む処理ガスを供給してプラズマを生成することによって,コンタクトホールが形成された被処理基板上にチタン膜を成膜する方法であって,
前記チタン膜の成膜処理に適用しようとする前記成膜ガスの流量が,前記成膜処理の反応律速領域に入るように,前記還元ガスの流量,前記処理室内の圧力,前記プラズマを生成するために電極に印加する高周波パワーのいずれかを変えることによって,前記反応律速領域を制御することを特徴とする成膜方法。 - 前記還元ガス流量,前記処理室内圧力,前記高周波パワーのいずれかを増加することによって,前記成膜処理の反応律速領域の境界となる前記成膜ガスの流量が大きくなるように制御することを特徴とする請求項1に記載の成膜方法。
- 前記成膜ガスの流量は,前記還元ガス流量に対する前記成膜ガスの流量比が13sccm/100sccm以上55sccm/100sccm以下となる範囲で設定したことを特徴とする請求項1又は2に記載の成膜方法。
- 前記成膜ガスの流量は,前記還元ガス流量に対する前記成膜ガスの流量比が13sccm/100sccm以上45.6sccm/100sccm以下となる範囲で設定したことを特徴とする請求項3に記載の成膜方法。
- 前記成膜ガスの流量は,前記還元ガス流量に対する前記成膜ガスの流量比が45.6sccm/100sccm以上55sccm/100sccm以下となる範囲で設定したことを特徴とする請求項3に記載の成膜方法。
- 前記成膜ガスの流量,前記還元ガスの流量,前記処理室内の圧力,前記高周波パワーを含む前記成膜処理の処理条件によって決定された前記成膜処理の反応律速領域で前記成膜ガスと還元ガスとを反応させることによって,前記被処理基板上にチタン膜を形成することを特徴とする請求項1〜5のいずれかに記載の成膜方法。
- 処理室内にチタン含有成膜ガスと還元ガスを含む処理ガスを供給してプラズマを生成することによって,コンタクトホールが形成された被処理基板上にチタン膜を成膜する成膜装置であって,
前記被処理基板を載置するサセプタと,
前記処理ガスを処理室内に供給するシャワーヘッドと,
前記サセプタとの間にプラズマを生成するための高周波を所定のパワーで前記シャワーヘッドに供給する高周波電源と,
前記処理室内を排気して所定の圧力に減圧する排気装置と,
前記チタン膜の成膜処理に適用しようとする前記成膜ガスの流量が,前記成膜処理の反応律速領域に入るように,前記還元ガスの流量,前記処理室内の圧力,前記高周波パワーのいずれかを変えることによって,前記反応律速領域を制御する制御部と,
を備えることを特徴とする成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2010219947A JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
KR1020110098074A KR101290957B1 (ko) | 2010-09-29 | 2011-09-28 | 성막 방법 및 성막 장치 |
TW100134922A TWI557263B (zh) | 2010-09-29 | 2011-09-28 | Film forming method and film forming device |
CN201110303097.XA CN102433546B (zh) | 2010-09-29 | 2011-09-29 | 成膜方法和成膜装置 |
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JP2010219947A JP5476269B2 (ja) | 2010-09-29 | 2010-09-29 | 成膜方法及び成膜装置 |
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JP2012072475A JP2012072475A (ja) | 2012-04-12 |
JP2012072475A5 JP2012072475A5 (ja) | 2013-05-16 |
JP5476269B2 true JP5476269B2 (ja) | 2014-04-23 |
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JP (1) | JP5476269B2 (ja) |
KR (1) | KR101290957B1 (ja) |
CN (1) | CN102433546B (ja) |
TW (1) | TWI557263B (ja) |
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KR102061749B1 (ko) * | 2012-12-27 | 2020-01-02 | 주식회사 무한 | 기판 처리 장치 |
JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP6492736B2 (ja) | 2015-02-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
JP2018113322A (ja) * | 2017-01-11 | 2018-07-19 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
CN107093577A (zh) * | 2017-04-17 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | 接触孔的制造方法 |
JP6777614B2 (ja) * | 2017-09-26 | 2020-10-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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JPH0629236A (ja) * | 1992-07-07 | 1994-02-04 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
TW554382B (en) * | 1998-06-09 | 2003-09-21 | Tokyo Electron Ltd | Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device |
JP4545433B2 (ja) * | 2003-12-26 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法 |
US7737005B2 (en) * | 2004-04-09 | 2010-06-15 | Tokyo Electron Limited | Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program |
WO2008007675A1 (fr) * | 2006-07-11 | 2008-01-17 | Tokyo Electron Limited | procédé de formation de film, procédé de nettoyage, et dispositif de formation de film |
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- 2011-09-28 TW TW100134922A patent/TWI557263B/zh active
- 2011-09-28 KR KR1020110098074A patent/KR101290957B1/ko active IP Right Grant
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KR101290957B1 (ko) | 2013-07-30 |
CN102433546B (zh) | 2015-01-07 |
JP2012072475A (ja) | 2012-04-12 |
CN102433546A (zh) | 2012-05-02 |
TWI557263B (zh) | 2016-11-11 |
TW201229294A (en) | 2012-07-16 |
KR20120033264A (ko) | 2012-04-06 |
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