JP4280686B2 - 処理方法 - Google Patents

処理方法 Download PDF

Info

Publication number
JP4280686B2
JP4280686B2 JP2004194233A JP2004194233A JP4280686B2 JP 4280686 B2 JP4280686 B2 JP 4280686B2 JP 2004194233 A JP2004194233 A JP 2004194233A JP 2004194233 A JP2004194233 A JP 2004194233A JP 4280686 B2 JP4280686 B2 JP 4280686B2
Authority
JP
Japan
Prior art keywords
plasma
processed
substrate
oxide film
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004194233A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006019413A (ja
JP2006019413A5 (enExample
Inventor
祐介 福地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004194233A priority Critical patent/JP4280686B2/ja
Priority to US11/165,505 priority patent/US20060003603A1/en
Publication of JP2006019413A publication Critical patent/JP2006019413A/ja
Publication of JP2006019413A5 publication Critical patent/JP2006019413A5/ja
Application granted granted Critical
Publication of JP4280686B2 publication Critical patent/JP4280686B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP2004194233A 2004-06-30 2004-06-30 処理方法 Expired - Fee Related JP4280686B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004194233A JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法
US11/165,505 US20060003603A1 (en) 2004-06-30 2005-06-24 Method and apparatus for processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194233A JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法

Publications (3)

Publication Number Publication Date
JP2006019413A JP2006019413A (ja) 2006-01-19
JP2006019413A5 JP2006019413A5 (enExample) 2007-08-09
JP4280686B2 true JP4280686B2 (ja) 2009-06-17

Family

ID=35514578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194233A Expired - Fee Related JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法

Country Status (2)

Country Link
US (1) US20060003603A1 (enExample)
JP (1) JP4280686B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US20070246161A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US7780864B2 (en) * 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
WO2008021501A2 (en) * 2006-08-18 2008-02-21 Piero Sferlazzo Apparatus and method for ultra-shallow implantation in a semiconductor device
US7851710B2 (en) * 2006-09-05 2010-12-14 Twinhead International Corp. Waterproof and dustproof structure
JP5089121B2 (ja) 2006-09-29 2012-12-05 東京エレクトロン株式会社 シリコン酸化膜の形成方法およびプラズマ処理装置
US8012822B2 (en) * 2007-12-27 2011-09-06 Canon Kabushiki Kaisha Process for forming dielectric films
JP2011071353A (ja) * 2009-09-25 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法
KR101708397B1 (ko) * 2009-12-23 2017-02-20 빌헬름 베크만 기판상에 유전체 층을 형성하기 위한 방법 그리고 장치
DE102011100024A1 (de) * 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Verfahren zum ausbilden einer schicht auf einem substrat
DE102011119013B4 (de) 2011-11-21 2022-11-03 Hq-Dielectrics Gmbh Verfahren zum ausbilden einer dielektrischen schicht auf einem substrat
US9941126B2 (en) * 2013-06-19 2018-04-10 Tokyo Electron Limited Microwave plasma device
US9887277B2 (en) 2015-01-23 2018-02-06 Applied Materials, Inc. Plasma treatment on metal-oxide TFT
JP6534263B2 (ja) * 2015-02-05 2019-06-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2016225573A (ja) * 2015-06-03 2016-12-28 株式会社東芝 基板処理装置および基板処理方法
CN115992345B (zh) * 2017-09-14 2025-08-01 弗萨姆材料美国有限责任公司 用于沉积含硅膜的组合物和方法
CN108666206B (zh) * 2018-05-25 2019-08-16 中国科学院微电子研究所 基于两步微波等离子体氧化的碳化硅氧化方法
CN108766887B (zh) * 2018-05-25 2019-07-30 中国科学院微电子研究所 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法
US11972943B2 (en) 2019-09-20 2024-04-30 Applied Materials, Inc. Methods and apparatus for depositing dielectric material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974543A (en) * 1986-02-28 1990-12-04 Xerox Corporation Apparatus for amorphous silicon film
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2918860B2 (ja) * 1997-01-20 1999-07-12 日本ピラー工業株式会社 鏡面体
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6800512B1 (en) * 1999-09-16 2004-10-05 Matsushita Electric Industrial Co., Ltd. Method of forming insulating film and method of fabricating semiconductor device
EP1361606B1 (en) * 2001-01-25 2010-11-24 Tokyo Electron Limited Method of producing electronic device material

Also Published As

Publication number Publication date
US20060003603A1 (en) 2006-01-05
JP2006019413A (ja) 2006-01-19

Similar Documents

Publication Publication Date Title
JP4280686B2 (ja) 処理方法
US7947561B2 (en) Methods for oxidation of a semiconductor device
JP4435666B2 (ja) プラズマ処理方法、成膜方法
US20060110934A1 (en) Method and apparatus for forming insulating film
JP2005129666A (ja) 処理方法及び装置
TWI478224B (zh) 基板處理裝置及半導體裝置之製造方法
US20170356084A1 (en) Processing method of silicon nitride film and forming method of silicon nitride film
JP2005150637A (ja) 処理方法及び装置
JP5231233B2 (ja) プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
KR101102690B1 (ko) 실리콘 산화막의 형성 방법, 플라즈마 처리 장치 및 기억 매체
WO2008026531A1 (en) Method of plasma oxidation processing
JP5390379B2 (ja) プラズマ窒化処理におけるチャンバ内の前処理方法、プラズマ処理方法、および記憶媒体
JP5096047B2 (ja) マイクロ波プラズマ処理装置およびマイクロ波透過板
KR20120069755A (ko) 선택적 플라즈마 질화 처리방법 및 플라즈마 질화 처리장치
JP5231232B2 (ja) プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
TWI402912B (zh) Manufacturing method of insulating film and manufacturing method of semiconductor device
KR101255905B1 (ko) 실리콘 산화막의 형성 방법 및 장치
JPWO2006046634A1 (ja) ゲート絶縁膜の形成方法，半導体装置及びコンピュータ記録媒体
WO2006025363A1 (ja) シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP2007088199A (ja) 処理装置
US20230080956A1 (en) Substrate processing method and substrate processing apparatus
KR101140694B1 (ko) 플라즈마 산화 처리 방법 및 플라즈마 처리 장치
JP3258441B2 (ja) マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070622

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070622

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070906

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081128

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20081128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090304

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090316

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120319

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140319

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees