JP2016105461A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016105461A5 JP2016105461A5 JP2015199852A JP2015199852A JP2016105461A5 JP 2016105461 A5 JP2016105461 A5 JP 2016105461A5 JP 2015199852 A JP2015199852 A JP 2015199852A JP 2015199852 A JP2015199852 A JP 2015199852A JP 2016105461 A5 JP2016105461 A5 JP 2016105461A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- halogen
- supplying
- dry
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 68
- 229910052736 halogen Inorganic materials 0.000 claims description 59
- 150000002367 halogens Chemical class 0.000 claims description 59
- 230000004888 barrier function Effects 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 17
- 238000002294 plasma sputter deposition Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000002738 chelating agent Substances 0.000 claims description 3
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006172 buffering agent Substances 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462061774P | 2014-10-09 | 2014-10-09 | |
| US62/061,774 | 2014-10-09 | ||
| US14/579,822 US9570320B2 (en) | 2014-10-09 | 2014-12-22 | Method to etch copper barrier film |
| US14/579,822 | 2014-12-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016105461A JP2016105461A (ja) | 2016-06-09 |
| JP2016105461A5 true JP2016105461A5 (enExample) | 2018-11-15 |
| JP6749749B2 JP6749749B2 (ja) | 2020-09-02 |
Family
ID=55655956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015199852A Active JP6749749B2 (ja) | 2014-10-09 | 2015-10-08 | 銅バリア膜をエッチングするための新規方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9570320B2 (enExample) |
| JP (1) | JP6749749B2 (enExample) |
| KR (1) | KR102516921B1 (enExample) |
| TW (1) | TWI690992B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9899234B2 (en) * | 2014-06-30 | 2018-02-20 | Lam Research Corporation | Liner and barrier applications for subtractive metal integration |
| JP6761166B2 (ja) * | 2015-07-23 | 2020-09-23 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
| WO2018020822A1 (ja) * | 2016-07-26 | 2018-02-01 | セントラル硝子株式会社 | エッチング方法及びエッチング装置 |
| KR102492733B1 (ko) * | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법 |
| US11322364B2 (en) * | 2020-04-01 | 2022-05-03 | Tokyo Electron Limited | Method of patterning a metal film with improved sidewall roughness |
| KR102837276B1 (ko) | 2021-03-30 | 2025-07-23 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조방법 |
| KR102574751B1 (ko) * | 2021-12-07 | 2023-09-06 | 인하대학교 산학협력단 | 구리 박막의 건식 식각방법 |
| WO2025071164A1 (ko) * | 2023-09-26 | 2025-04-03 | 에이피에스리서치 주식회사 | 구리박막의 건식 식각 방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111420A (ja) * | 1994-10-12 | 1996-04-30 | Fujitsu Ltd | 半導体装置の製造方法及び製造装置 |
| US6143476A (en) * | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
| US6177337B1 (en) | 1998-01-06 | 2001-01-23 | International Business Machines Corporation | Method of reducing metal voids in semiconductor device interconnection |
| JP3490669B2 (ja) * | 2000-07-18 | 2004-01-26 | 株式会社日立製作所 | 不揮発性材料のエッチング方法および装置 |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| JP5412517B2 (ja) * | 2008-08-20 | 2014-02-12 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | バリア層除去方法及び装置 |
| US8591661B2 (en) * | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
| US8076778B2 (en) * | 2009-09-30 | 2011-12-13 | Macronix International Co., Ltd. | Method for preventing Al-Cu bottom damage using TiN liner |
| US20130323930A1 (en) * | 2012-05-29 | 2013-12-05 | Kaushik Chattopadhyay | Selective Capping of Metal Interconnect Lines during Air Gap Formation |
| JP2014086500A (ja) * | 2012-10-22 | 2014-05-12 | Tokyo Electron Ltd | 銅層をエッチングする方法、及びマスク |
| US8921234B2 (en) * | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
| JP2014183184A (ja) * | 2013-03-19 | 2014-09-29 | Tokyo Electron Ltd | コバルト及びパラジウムを含む膜をエッチングする方法 |
-
2014
- 2014-12-22 US US14/579,822 patent/US9570320B2/en active Active
-
2015
- 2015-10-08 KR KR1020150141737A patent/KR102516921B1/ko active Active
- 2015-10-08 TW TW104133125A patent/TWI690992B/zh active
- 2015-10-08 JP JP2015199852A patent/JP6749749B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016105461A5 (enExample) | ||
| JP6749749B2 (ja) | 銅バリア膜をエッチングするための新規方法 | |
| JP6373160B2 (ja) | プラズマ処理装置 | |
| JP6400425B2 (ja) | 多層膜をエッチングする方法 | |
| JP6604911B2 (ja) | エッチング処理方法 | |
| TWI650886B (zh) | 非揮發性金屬材料之蝕刻方法 | |
| KR102127175B1 (ko) | 구리층을 에칭하는 방법 및 마스크 | |
| US20150132953A1 (en) | Etching of semiconductor structures that include titanium-based layers | |
| JP2016208027A5 (ja) | チェンバ内で基板を処理する方法およびその装置 | |
| JP2015038964A5 (enExample) | ||
| JP2012119699A5 (enExample) | ||
| EP2916344B1 (en) | Method of cleaning a plasma processing apparatus | |
| JP2024178200A (ja) | アルミニウム含有膜除去のためのシステム及び方法 | |
| JP2015018885A5 (enExample) | ||
| JP6454605B2 (ja) | 基板処理方法および基板処理装置 | |
| JP2010010573A5 (enExample) | ||
| US7824499B2 (en) | Photon induced cleaning of a reaction chamber | |
| US20160099158A1 (en) | Method for removing metal oxide | |
| KR101127778B1 (ko) | 구리 표면의 표면 환원, 패시베이션, 부식 방지 및 활성화 시스템과 방법 | |
| KR20130028059A (ko) | 다마신 프로세스들의 측벽 폴리머에 대한 세정 용액 | |
| CN109643664B (zh) | 电子设备的解封装 | |
| JP2013175797A5 (enExample) | ||
| JP2006148122A (ja) | 半導体基板上の金属構造から残留物を除去するための方法 | |
| JP6745199B2 (ja) | 銅層をエッチングする方法 | |
| CN106939411B (zh) | 氮化钛的形成方法 |