JP6749749B2 - 銅バリア膜をエッチングするための新規方法 - Google Patents

銅バリア膜をエッチングするための新規方法 Download PDF

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JP6749749B2
JP6749749B2 JP2015199852A JP2015199852A JP6749749B2 JP 6749749 B2 JP6749749 B2 JP 6749749B2 JP 2015199852 A JP2015199852 A JP 2015199852A JP 2015199852 A JP2015199852 A JP 2015199852A JP 6749749 B2 JP6749749 B2 JP 6749749B2
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gas
pulsed
halogen
supplying
dry
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JP2016105461A (ja
JP2016105461A5 (enExample
Inventor
メイファ・シェン
ジー・ジュウ
シュオガン・ホワン
バオスオ・ジョウ
ジョン・ホアン
プリス・シャーマ
トルステン・リル
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H10P50/648—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Plasma Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2015199852A 2014-10-09 2015-10-08 銅バリア膜をエッチングするための新規方法 Active JP6749749B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462061774P 2014-10-09 2014-10-09
US62/061,774 2014-10-09
US14/579,822 2014-12-22
US14/579,822 US9570320B2 (en) 2014-10-09 2014-12-22 Method to etch copper barrier film

Publications (3)

Publication Number Publication Date
JP2016105461A JP2016105461A (ja) 2016-06-09
JP2016105461A5 JP2016105461A5 (enExample) 2018-11-15
JP6749749B2 true JP6749749B2 (ja) 2020-09-02

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ID=55655956

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Application Number Title Priority Date Filing Date
JP2015199852A Active JP6749749B2 (ja) 2014-10-09 2015-10-08 銅バリア膜をエッチングするための新規方法

Country Status (4)

Country Link
US (1) US9570320B2 (enExample)
JP (1) JP6749749B2 (enExample)
KR (1) KR102516921B1 (enExample)
TW (1) TWI690992B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899234B2 (en) * 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
US11282714B2 (en) * 2016-07-26 2022-03-22 Central Glass Company, Limited Etching method and etching device
KR102492733B1 (ko) * 2017-09-29 2023-01-27 삼성디스플레이 주식회사 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness
KR102837276B1 (ko) 2021-03-30 2025-07-23 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조방법
KR102574751B1 (ko) * 2021-12-07 2023-09-06 인하대학교 산학협력단 구리 박막의 건식 식각방법
WO2025071164A1 (ko) * 2023-09-26 2025-04-03 에이피에스리서치 주식회사 구리박막의 건식 식각 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111420A (ja) * 1994-10-12 1996-04-30 Fujitsu Ltd 半導体装置の製造方法及び製造装置
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection
JP3490669B2 (ja) * 2000-07-18 2004-01-26 株式会社日立製作所 不揮発性材料のエッチング方法および装置
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US8598039B2 (en) * 2008-08-20 2013-12-03 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US8076778B2 (en) * 2009-09-30 2011-12-13 Macronix International Co., Ltd. Method for preventing Al-Cu bottom damage using TiN liner
US20130323930A1 (en) * 2012-05-29 2013-12-05 Kaushik Chattopadhyay Selective Capping of Metal Interconnect Lines during Air Gap Formation
JP2014086500A (ja) * 2012-10-22 2014-05-12 Tokyo Electron Ltd 銅層をエッチングする方法、及びマスク
US8921234B2 (en) * 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
JP2014183184A (ja) * 2013-03-19 2014-09-29 Tokyo Electron Ltd コバルト及びパラジウムを含む膜をエッチングする方法

Also Published As

Publication number Publication date
US20160104630A1 (en) 2016-04-14
TW201628083A (zh) 2016-08-01
KR102516921B1 (ko) 2023-03-31
TWI690992B (zh) 2020-04-11
US9570320B2 (en) 2017-02-14
JP2016105461A (ja) 2016-06-09
KR20160042396A (ko) 2016-04-19

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