TWI690992B - 銅阻障膜之蝕刻方法 - Google Patents

銅阻障膜之蝕刻方法 Download PDF

Info

Publication number
TWI690992B
TWI690992B TW104133125A TW104133125A TWI690992B TW I690992 B TWI690992 B TW I690992B TW 104133125 A TW104133125 A TW 104133125A TW 104133125 A TW104133125 A TW 104133125A TW I690992 B TWI690992 B TW I690992B
Authority
TW
Taiwan
Prior art keywords
gas
barrier film
providing
halogen
pulse
Prior art date
Application number
TW104133125A
Other languages
English (en)
Chinese (zh)
Other versions
TW201628083A (zh
Inventor
美華 沈
朱濟
朔罡 黃
周葆所
約翰 黃
普力圖 沙瑪
托爾斯滕 立爾
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201628083A publication Critical patent/TW201628083A/zh
Application granted granted Critical
Publication of TWI690992B publication Critical patent/TWI690992B/zh

Links

Images

Classifications

    • H10P50/267—
    • H10P50/242—
    • H10P50/244—
    • H10P50/246—
    • H10P50/262—
    • H10P50/264—
    • H10P50/71—
    • H10W20/054—
    • H10P50/648—
    • H10W20/063—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Weting (AREA)
TW104133125A 2014-10-09 2015-10-08 銅阻障膜之蝕刻方法 TWI690992B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462061774P 2014-10-09 2014-10-09
US62/061,774 2014-10-09
US14/579,822 US9570320B2 (en) 2014-10-09 2014-12-22 Method to etch copper barrier film
US14/579,822 2014-12-22

Publications (2)

Publication Number Publication Date
TW201628083A TW201628083A (zh) 2016-08-01
TWI690992B true TWI690992B (zh) 2020-04-11

Family

ID=55655956

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104133125A TWI690992B (zh) 2014-10-09 2015-10-08 銅阻障膜之蝕刻方法

Country Status (4)

Country Link
US (1) US9570320B2 (enExample)
JP (1) JP6749749B2 (enExample)
KR (1) KR102516921B1 (enExample)
TW (1) TWI690992B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899234B2 (en) * 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
KR102382484B1 (ko) * 2016-07-26 2022-04-04 샌트랄 글래스 컴퍼니 리미티드 에칭 방법 및 에칭 장치
KR102492733B1 (ko) * 2017-09-29 2023-01-27 삼성디스플레이 주식회사 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness
KR102837276B1 (ko) 2021-03-30 2025-07-23 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조방법
KR102574751B1 (ko) * 2021-12-07 2023-09-06 인하대학교 산학협력단 구리 박막의 건식 식각방법
WO2025071164A1 (ko) * 2023-09-26 2025-04-03 에이피에스리서치 주식회사 구리박막의 건식 식각 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US20110074030A1 (en) * 2009-09-30 2011-03-31 Macronix International Co., Ltd. METHOD FOR PREVENTING Al-Cu BOTTOM DAMAGE USING TiN LINER
TW201137970A (en) * 2009-12-11 2011-11-01 Novellus Systems Inc Low damage photoresist strip method for low-k dielectrics
TW201409614A (zh) * 2012-05-29 2014-03-01 諾發系統有限公司 在氣隙形成期間金屬內連線之選擇性加蓋
US20140179111A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Selective titanium nitride etching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111420A (ja) * 1994-10-12 1996-04-30 Fujitsu Ltd 半導体装置の製造方法及び製造装置
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6177337B1 (en) 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection
JP3490669B2 (ja) * 2000-07-18 2004-01-26 株式会社日立製作所 不揮発性材料のエッチング方法および装置
JP5412517B2 (ja) * 2008-08-20 2014-02-12 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法及び装置
JP2014086500A (ja) * 2012-10-22 2014-05-12 Tokyo Electron Ltd 銅層をエッチングする方法、及びマスク
JP2014183184A (ja) * 2013-03-19 2014-09-29 Tokyo Electron Ltd コバルト及びパラジウムを含む膜をエッチングする方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US20110074030A1 (en) * 2009-09-30 2011-03-31 Macronix International Co., Ltd. METHOD FOR PREVENTING Al-Cu BOTTOM DAMAGE USING TiN LINER
TW201137970A (en) * 2009-12-11 2011-11-01 Novellus Systems Inc Low damage photoresist strip method for low-k dielectrics
TW201409614A (zh) * 2012-05-29 2014-03-01 諾發系統有限公司 在氣隙形成期間金屬內連線之選擇性加蓋
US20140179111A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Selective titanium nitride etching

Also Published As

Publication number Publication date
KR20160042396A (ko) 2016-04-19
JP2016105461A (ja) 2016-06-09
KR102516921B1 (ko) 2023-03-31
US9570320B2 (en) 2017-02-14
US20160104630A1 (en) 2016-04-14
TW201628083A (zh) 2016-08-01
JP6749749B2 (ja) 2020-09-02

Similar Documents

Publication Publication Date Title
TWI690992B (zh) 銅阻障膜之蝕刻方法
TWI650886B (zh) 非揮發性金屬材料之蝕刻方法
Nojiri Dry etching technology for semiconductors
CN101536155B (zh) 一种具有原位背侧聚合物去除的等离子体蚀刻工艺
CN103258729B (zh) 硅结构的制造和带有形貌控制的深硅蚀刻
TW202002722A (zh) 電漿處理方法及電漿處理裝置
US8435419B2 (en) Methods of processing substrates having metal materials
KR20130135767A (ko) 플라즈마를 이용한 비휘발성 재료들의 층-층 에칭
KR20080018110A (ko) 플라즈마 에칭 성능 강화 방법
US10053773B2 (en) Method of cleaning plasma processing apparatus
JP2009530861A (ja) 介在チャンバでの脱フッ素化及びウェハ脱フッ素化ステップによるプラズマエッチング及びフォトレジストストリッププロセス
KR101171813B1 (ko) 유기 재료의 균일한 제거를 제공하는 방법
CN107919264A (zh) 有关有机掩模的用于选择性地蚀刻氧化硅的方法
TW201442108A (zh) 在原處之金屬殘餘物清潔
CN1210773C (zh) 除去剩余光致抗蚀剂和残留侧壁钝化物的原位后蚀刻方法
TWI659469B (zh) 含鎢層之蝕刻方法
KR101723685B1 (ko) 저유전율 유전체 손상이 감소된 박리
TWI485771B (zh) Semiconductor processing methods
JP2003303808A (ja) 半導体装置の製造方法
US6921493B2 (en) Method of processing substrates
KR20060121269A (ko) 구리 표면의 표면 감소, 패시베이션, 부식 방지 및 활성화시스템과 방법
CN104471686B (zh) 等离子体蚀刻方法和等离子体蚀刻装置
CN102365718B (zh) 减少损坏的低k电介质刻蚀的方法
US8846528B2 (en) Method of modifying a low k dielectric layer having etched features and the resulting product