JP2018078138A5 - - Google Patents
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- Publication number
- JP2018078138A5 JP2018078138A5 JP2016217163A JP2016217163A JP2018078138A5 JP 2018078138 A5 JP2018078138 A5 JP 2018078138A5 JP 2016217163 A JP2016217163 A JP 2016217163A JP 2016217163 A JP2016217163 A JP 2016217163A JP 2018078138 A5 JP2018078138 A5 JP 2018078138A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas
- etched
- processing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 61
- 238000000034 method Methods 0.000 claims 24
- 238000010926 purge Methods 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 5
- 229910052731 fluorine Inorganic materials 0.000 claims 5
- 239000011737 fluorine Substances 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016217163A JP6763750B2 (ja) | 2016-11-07 | 2016-11-07 | 被処理体を処理する方法 |
| TW106137484A TWI759348B (zh) | 2016-11-07 | 2017-10-31 | 被處理體之處理方法 |
| KR1020237028539A KR20230127373A (ko) | 2016-11-07 | 2017-11-02 | 피처리체를 처리하는 방법 |
| US16/347,697 US11081360B2 (en) | 2016-11-07 | 2017-11-02 | Method for processing workpiece |
| PCT/JP2017/039772 WO2018084255A1 (ja) | 2016-11-07 | 2017-11-02 | 被処理体を処理する方法 |
| CN201780068805.1A CN109923648B (zh) | 2016-11-07 | 2017-11-02 | 处理被处理体的方法 |
| KR1020197013091A KR102571380B1 (ko) | 2016-11-07 | 2017-11-02 | 피처리체를 처리하는 방법 |
| US17/362,285 US12476115B2 (en) | 2016-11-07 | 2021-06-29 | Method for processing workpiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016217163A JP6763750B2 (ja) | 2016-11-07 | 2016-11-07 | 被処理体を処理する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018078138A JP2018078138A (ja) | 2018-05-17 |
| JP2018078138A5 true JP2018078138A5 (enExample) | 2019-09-26 |
| JP6763750B2 JP6763750B2 (ja) | 2020-09-30 |
Family
ID=62076951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016217163A Active JP6763750B2 (ja) | 2016-11-07 | 2016-11-07 | 被処理体を処理する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11081360B2 (enExample) |
| JP (1) | JP6763750B2 (enExample) |
| KR (2) | KR102571380B1 (enExample) |
| CN (1) | CN109923648B (enExample) |
| TW (1) | TWI759348B (enExample) |
| WO (1) | WO2018084255A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7066565B2 (ja) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| US10950428B1 (en) * | 2019-08-30 | 2021-03-16 | Mattson Technology, Inc. | Method for processing a workpiece |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5286344A (en) * | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
| KR100276736B1 (ko) * | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | 플라즈마 처리장치 |
| US5786276A (en) * | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
| US5942446A (en) * | 1997-09-12 | 1999-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer |
| JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
| KR100480610B1 (ko) | 2002-08-09 | 2005-03-31 | 삼성전자주식회사 | 실리콘 산화막을 이용한 미세 패턴 형성방법 |
| JP2013258244A (ja) * | 2012-06-12 | 2013-12-26 | Tokyo Electron Ltd | エッチング方法及びプラズマ処理装置 |
| JP5982223B2 (ja) * | 2012-08-27 | 2016-08-31 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
| US8956980B1 (en) * | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
| JP2015084396A (ja) * | 2013-09-19 | 2015-04-30 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6277004B2 (ja) * | 2014-01-31 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US9548303B2 (en) * | 2014-03-13 | 2017-01-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET devices with unique fin shape and the fabrication thereof |
| US9142459B1 (en) * | 2014-06-30 | 2015-09-22 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination |
| JP6435667B2 (ja) * | 2014-07-01 | 2018-12-12 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置及び記憶媒体 |
| JP6366454B2 (ja) * | 2014-10-07 | 2018-08-01 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US9425041B2 (en) * | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
| JP6339963B2 (ja) * | 2015-04-06 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
-
2016
- 2016-11-07 JP JP2016217163A patent/JP6763750B2/ja active Active
-
2017
- 2017-10-31 TW TW106137484A patent/TWI759348B/zh active
- 2017-11-02 US US16/347,697 patent/US11081360B2/en active Active
- 2017-11-02 KR KR1020197013091A patent/KR102571380B1/ko active Active
- 2017-11-02 WO PCT/JP2017/039772 patent/WO2018084255A1/ja not_active Ceased
- 2017-11-02 CN CN201780068805.1A patent/CN109923648B/zh active Active
- 2017-11-02 KR KR1020237028539A patent/KR20230127373A/ko not_active Ceased
-
2021
- 2021-06-29 US US17/362,285 patent/US12476115B2/en active Active
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