CN103828029A - 堆积物去除方法 - Google Patents
堆积物去除方法 Download PDFInfo
- Publication number
- CN103828029A CN103828029A CN201280047417.2A CN201280047417A CN103828029A CN 103828029 A CN103828029 A CN 103828029A CN 201280047417 A CN201280047417 A CN 201280047417A CN 103828029 A CN103828029 A CN 103828029A
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- gas
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- removal method
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 124
- 239000007789 gas Substances 0.000 claims abstract description 149
- 239000001301 oxygen Substances 0.000 claims abstract description 47
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 83
- 150000001298 alcohols Chemical class 0.000 claims description 18
- 239000003595 mist Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 230000004087 circulation Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 81
- 239000004065 semiconductor Substances 0.000 description 39
- 239000013078 crystal Substances 0.000 description 36
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002926 oxygen Chemical class 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008676 import Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- -1 oxygen radical Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-213677 | 2011-09-29 | ||
JP2011213677A JP5859262B2 (ja) | 2011-09-29 | 2011-09-29 | 堆積物除去方法 |
PCT/JP2012/006091 WO2013046642A1 (ja) | 2011-09-29 | 2012-09-25 | 堆積物除去方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103828029A true CN103828029A (zh) | 2014-05-28 |
CN103828029B CN103828029B (zh) | 2016-06-15 |
Family
ID=47994725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280047417.2A Active CN103828029B (zh) | 2011-09-29 | 2012-09-25 | 堆积物去除方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9177816B2 (zh) |
JP (1) | JP5859262B2 (zh) |
KR (1) | KR101930577B1 (zh) |
CN (1) | CN103828029B (zh) |
TW (1) | TW201332010A (zh) |
WO (1) | WO2013046642A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107331614A (zh) * | 2017-06-23 | 2017-11-07 | 江苏鲁汶仪器有限公司 | 一种自限制精确刻蚀硅的方法及其专用装置 |
WO2018064984A1 (zh) * | 2016-10-08 | 2018-04-12 | 北京北方华创微电子装备有限公司 | 去除晶片上的二氧化硅的方法及集成电路制造工艺 |
CN110268508A (zh) * | 2017-03-27 | 2019-09-20 | 株式会社日立高新技术 | 等离子体处理方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6017170B2 (ja) * | 2012-04-18 | 2016-10-26 | 東京エレクトロン株式会社 | 堆積物除去方法及びガス処理装置 |
JP6499001B2 (ja) | 2015-04-20 | 2019-04-10 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
JP7137927B2 (ja) * | 2017-12-20 | 2022-09-15 | キオクシア株式会社 | 半導体装置の製造方法 |
WO2021205632A1 (ja) | 2020-04-10 | 2021-10-14 | 株式会社日立ハイテク | エッチング方法 |
CN116918042A (zh) | 2022-02-14 | 2023-10-20 | 株式会社日立高新技术 | 蚀刻处理方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6383918B1 (en) * | 1999-03-15 | 2002-05-07 | Philips Electronics | Method for reducing semiconductor contact resistance |
CN1388571A (zh) * | 2001-05-24 | 2003-01-01 | 矽统科技股份有限公司 | 介电层的蚀刻制程 |
US20060207968A1 (en) * | 2005-03-08 | 2006-09-21 | Mumbauer Paul D | Selective etching of oxides from substrates |
JP2008126373A (ja) * | 2006-11-22 | 2008-06-05 | Sumitomo Precision Prod Co Ltd | 高アスペクト比の開口を有するシリコン構造体用エッチングマスクの製造方法及びその装置並びにその製造プログラム |
CN101202243A (zh) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | 嵌入式闪存器件中悬浮式刻蚀阻挡层接触孔的刻蚀方法 |
CN101421828A (zh) * | 2006-09-29 | 2009-04-29 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
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JPS635532A (ja) * | 1986-06-25 | 1988-01-11 | Matsushita Electric Ind Co Ltd | プラズマクリ−ニング方法 |
JPH05304122A (ja) | 1992-04-28 | 1993-11-16 | Matsushita Electric Ind Co Ltd | ドライエッチング方法およびドライエッチング装置 |
JPH0684852A (ja) * | 1992-09-02 | 1994-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3328416B2 (ja) | 1994-03-18 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
JPH07335602A (ja) * | 1994-06-06 | 1995-12-22 | Dainippon Screen Mfg Co Ltd | 基板の表面処理方法及び表面処理装置 |
JP3334578B2 (ja) * | 1996-12-16 | 2002-10-15 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
TW418444B (en) | 1996-12-16 | 2001-01-11 | Shinetsu Handotai Kk | The surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film |
JP2000049227A (ja) * | 1998-07-31 | 2000-02-18 | Toshiba Corp | 半導体装置の製造方法 |
US6379574B1 (en) * | 1999-05-03 | 2002-04-30 | Applied Materials, Inc. | Integrated post-etch treatment for a dielectric etch process |
JP2001007094A (ja) | 1999-05-03 | 2001-01-12 | Applied Materials Inc | 誘電エッチングプロセスのための総合エッチング後処理方法 |
JP2002353205A (ja) * | 2000-08-28 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置 |
JP4727170B2 (ja) | 2004-06-23 | 2011-07-20 | 東京エレクトロン株式会社 | プラズマ処理方法、および後処理方法 |
US20060011580A1 (en) | 2004-06-23 | 2006-01-19 | Tokyo Electron Limited | Plasma processing method and post-processing method |
JP2007115795A (ja) * | 2005-10-19 | 2007-05-10 | Hitachi High-Technologies Corp | 基板裏面のドライ洗浄方法とその装置 |
GB0615343D0 (en) * | 2006-08-02 | 2006-09-13 | Point 35 Microstructures Ltd | Improved etch process |
JP5177997B2 (ja) * | 2006-11-22 | 2013-04-10 | Sppテクノロジーズ株式会社 | 高アスペクト比の開口を有するシリコン構造体、その製造方法、その製造装置、及びその製造プログラム |
KR20090091307A (ko) | 2006-11-22 | 2009-08-27 | 스미토모 세이미츠 고교 가부시키가이샤 | 높은 아스펙트비의 개구를 갖는 실리콘 구조체, 이의 제조방법, 이의 제조 장치, 및 이의 제조 프로그램, 및 이의 실리콘 구조체용 에칭 마스크의 제조방법 |
US7813028B2 (en) | 2006-12-04 | 2010-10-12 | Teledyne Licensing, Llc | Manufacturing method for stress compensated X-Y gimbaled MEMS mirror array |
JP5823160B2 (ja) * | 2011-05-11 | 2015-11-25 | 東京エレクトロン株式会社 | 堆積物除去方法 |
-
2011
- 2011-09-29 JP JP2011213677A patent/JP5859262B2/ja active Active
-
2012
- 2012-09-25 CN CN201280047417.2A patent/CN103828029B/zh active Active
- 2012-09-25 KR KR1020147011356A patent/KR101930577B1/ko active IP Right Grant
- 2012-09-25 WO PCT/JP2012/006091 patent/WO2013046642A1/ja active Application Filing
- 2012-09-26 TW TW101135420A patent/TW201332010A/zh unknown
-
2014
- 2014-03-24 US US14/222,762 patent/US9177816B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6383918B1 (en) * | 1999-03-15 | 2002-05-07 | Philips Electronics | Method for reducing semiconductor contact resistance |
CN1388571A (zh) * | 2001-05-24 | 2003-01-01 | 矽统科技股份有限公司 | 介电层的蚀刻制程 |
US20060207968A1 (en) * | 2005-03-08 | 2006-09-21 | Mumbauer Paul D | Selective etching of oxides from substrates |
CN101421828A (zh) * | 2006-09-29 | 2009-04-29 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
JP2008126373A (ja) * | 2006-11-22 | 2008-06-05 | Sumitomo Precision Prod Co Ltd | 高アスペクト比の開口を有するシリコン構造体用エッチングマスクの製造方法及びその装置並びにその製造プログラム |
CN101202243A (zh) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | 嵌入式闪存器件中悬浮式刻蚀阻挡层接触孔的刻蚀方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018064984A1 (zh) * | 2016-10-08 | 2018-04-12 | 北京北方华创微电子装备有限公司 | 去除晶片上的二氧化硅的方法及集成电路制造工艺 |
US10937661B2 (en) | 2016-10-08 | 2021-03-02 | Beijing Naura Microelectronics Equipment Co., Ltd. | Method for removing silicon oxide and integrated circuit manufacturing process |
CN113506731A (zh) * | 2016-10-08 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 一种集成电路的制造工艺 |
CN110268508A (zh) * | 2017-03-27 | 2019-09-20 | 株式会社日立高新技术 | 等离子体处理方法 |
CN110268508B (zh) * | 2017-03-27 | 2024-03-19 | 株式会社日立高新技术 | 等离子体处理方法 |
CN107331614A (zh) * | 2017-06-23 | 2017-11-07 | 江苏鲁汶仪器有限公司 | 一种自限制精确刻蚀硅的方法及其专用装置 |
CN107331614B (zh) * | 2017-06-23 | 2021-05-25 | 江苏鲁汶仪器有限公司 | 一种自限制精确刻蚀硅的方法及其专用装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2013074220A (ja) | 2013-04-22 |
JP5859262B2 (ja) | 2016-02-10 |
TW201332010A (zh) | 2013-08-01 |
US9177816B2 (en) | 2015-11-03 |
CN103828029B (zh) | 2016-06-15 |
US20140206198A1 (en) | 2014-07-24 |
KR101930577B1 (ko) | 2018-12-18 |
TWI562228B (zh) | 2016-12-11 |
WO2013046642A1 (ja) | 2013-04-04 |
KR20140082758A (ko) | 2014-07-02 |
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Effective date of registration: 20171205 Address after: Tokyo, Japan Co-patentee after: TOSHIBA MEMORY Corp. Patentee after: Tokyo Electron Ltd. Address before: Tokyo, Japan Co-patentee before: Toshiba Corp. Patentee before: Tokyo Electron Ltd. |
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Effective date of registration: 20220323 Address after: Tokyo, Japan Patentee after: Tokyo Electron Ltd. Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: Tokyo Electron Ltd. Patentee before: TOSHIBA MEMORY Corp. |
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