CN103828029B - 堆积物去除方法 - Google Patents
堆积物去除方法 Download PDFInfo
- Publication number
- CN103828029B CN103828029B CN201280047417.2A CN201280047417A CN103828029B CN 103828029 B CN103828029 B CN 103828029B CN 201280047417 A CN201280047417 A CN 201280047417A CN 103828029 B CN103828029 B CN 103828029B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011213677A JP5859262B2 (ja) | 2011-09-29 | 2011-09-29 | 堆積物除去方法 |
JP2011-213677 | 2011-09-29 | ||
PCT/JP2012/006091 WO2013046642A1 (ja) | 2011-09-29 | 2012-09-25 | 堆積物除去方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103828029A CN103828029A (zh) | 2014-05-28 |
CN103828029B true CN103828029B (zh) | 2016-06-15 |
Family
ID=47994725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280047417.2A Active CN103828029B (zh) | 2011-09-29 | 2012-09-25 | 堆积物去除方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9177816B2 (zh) |
JP (1) | JP5859262B2 (zh) |
KR (1) | KR101930577B1 (zh) |
CN (1) | CN103828029B (zh) |
TW (1) | TW201332010A (zh) |
WO (1) | WO2013046642A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6017170B2 (ja) * | 2012-04-18 | 2016-10-26 | 東京エレクトロン株式会社 | 堆積物除去方法及びガス処理装置 |
JP6499001B2 (ja) * | 2015-04-20 | 2019-04-10 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
CN113506731A (zh) * | 2016-10-08 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 一种集成电路的制造工艺 |
KR102342686B1 (ko) * | 2017-03-27 | 2021-12-24 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
CN107331614B (zh) * | 2017-06-23 | 2021-05-25 | 江苏鲁汶仪器有限公司 | 一种自限制精确刻蚀硅的方法及其专用装置 |
JP7137927B2 (ja) * | 2017-12-20 | 2022-09-15 | キオクシア株式会社 | 半導体装置の製造方法 |
KR102590870B1 (ko) | 2020-04-10 | 2023-10-19 | 주식회사 히타치하이테크 | 에칭 방법 |
WO2023152941A1 (ja) | 2022-02-14 | 2023-08-17 | 株式会社日立ハイテク | エッチング処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6383918B1 (en) * | 1999-03-15 | 2002-05-07 | Philips Electronics | Method for reducing semiconductor contact resistance |
CN1388571A (zh) * | 2001-05-24 | 2003-01-01 | 矽统科技股份有限公司 | 介电层的蚀刻制程 |
CN101202243A (zh) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | 嵌入式闪存器件中悬浮式刻蚀阻挡层接触孔的刻蚀方法 |
CN101421828A (zh) * | 2006-09-29 | 2009-04-29 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS635532A (ja) * | 1986-06-25 | 1988-01-11 | Matsushita Electric Ind Co Ltd | プラズマクリ−ニング方法 |
JPH05304122A (ja) | 1992-04-28 | 1993-11-16 | Matsushita Electric Ind Co Ltd | ドライエッチング方法およびドライエッチング装置 |
JPH0684852A (ja) * | 1992-09-02 | 1994-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3328416B2 (ja) | 1994-03-18 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
JPH07335602A (ja) * | 1994-06-06 | 1995-12-22 | Dainippon Screen Mfg Co Ltd | 基板の表面処理方法及び表面処理装置 |
TW418444B (en) | 1996-12-16 | 2001-01-11 | Shinetsu Handotai Kk | The surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film |
JP3334578B2 (ja) * | 1996-12-16 | 2002-10-15 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
JP2000049227A (ja) * | 1998-07-31 | 2000-02-18 | Toshiba Corp | 半導体装置の製造方法 |
JP2001007094A (ja) | 1999-05-03 | 2001-01-12 | Applied Materials Inc | 誘電エッチングプロセスのための総合エッチング後処理方法 |
US6379574B1 (en) | 1999-05-03 | 2002-04-30 | Applied Materials, Inc. | Integrated post-etch treatment for a dielectric etch process |
JP2002353205A (ja) * | 2000-08-28 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置 |
JP4727170B2 (ja) | 2004-06-23 | 2011-07-20 | 東京エレクトロン株式会社 | プラズマ処理方法、および後処理方法 |
US20060011580A1 (en) | 2004-06-23 | 2006-01-19 | Tokyo Electron Limited | Plasma processing method and post-processing method |
WO2008088300A2 (en) * | 2005-03-08 | 2008-07-24 | Primaxx, Inc. | Selective etching of oxides from substrates |
JP2007115795A (ja) * | 2005-10-19 | 2007-05-10 | Hitachi High-Technologies Corp | 基板裏面のドライ洗浄方法とその装置 |
GB0615343D0 (en) * | 2006-08-02 | 2006-09-13 | Point 35 Microstructures Ltd | Improved etch process |
JP5177997B2 (ja) * | 2006-11-22 | 2013-04-10 | Sppテクノロジーズ株式会社 | 高アスペクト比の開口を有するシリコン構造体、その製造方法、その製造装置、及びその製造プログラム |
WO2008062600A1 (en) | 2006-11-22 | 2008-05-29 | Sumitomo Precision Products Co., Ltd. | Silicon structure with opening having high aspect ratio, method for manufacturing the silicon structure, apparatus for manufacturing the silicon structure, program for manufacturing the silicon structure, and method for manufacturing etching mask for the silicon structure |
JP5074009B2 (ja) * | 2006-11-22 | 2012-11-14 | Sppテクノロジーズ株式会社 | 高アスペクト比の開口を有するシリコン構造体用エッチングマスクの製造方法及びその装置並びにその製造プログラム |
US7813028B2 (en) | 2006-12-04 | 2010-10-12 | Teledyne Licensing, Llc | Manufacturing method for stress compensated X-Y gimbaled MEMS mirror array |
JP5823160B2 (ja) * | 2011-05-11 | 2015-11-25 | 東京エレクトロン株式会社 | 堆積物除去方法 |
-
2011
- 2011-09-29 JP JP2011213677A patent/JP5859262B2/ja active Active
-
2012
- 2012-09-25 WO PCT/JP2012/006091 patent/WO2013046642A1/ja active Application Filing
- 2012-09-25 KR KR1020147011356A patent/KR101930577B1/ko active IP Right Grant
- 2012-09-25 CN CN201280047417.2A patent/CN103828029B/zh active Active
- 2012-09-26 TW TW101135420A patent/TW201332010A/zh unknown
-
2014
- 2014-03-24 US US14/222,762 patent/US9177816B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6383918B1 (en) * | 1999-03-15 | 2002-05-07 | Philips Electronics | Method for reducing semiconductor contact resistance |
CN1388571A (zh) * | 2001-05-24 | 2003-01-01 | 矽统科技股份有限公司 | 介电层的蚀刻制程 |
CN101421828A (zh) * | 2006-09-29 | 2009-04-29 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
CN101202243A (zh) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | 嵌入式闪存器件中悬浮式刻蚀阻挡层接触孔的刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
US9177816B2 (en) | 2015-11-03 |
JP5859262B2 (ja) | 2016-02-10 |
KR101930577B1 (ko) | 2018-12-18 |
US20140206198A1 (en) | 2014-07-24 |
CN103828029A (zh) | 2014-05-28 |
TWI562228B (zh) | 2016-12-11 |
KR20140082758A (ko) | 2014-07-02 |
TW201332010A (zh) | 2013-08-01 |
JP2013074220A (ja) | 2013-04-22 |
WO2013046642A1 (ja) | 2013-04-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171205 Address after: Tokyo, Japan Co-patentee after: TOSHIBA MEMORY Corp. Patentee after: Tokyo Electron Ltd. Address before: Tokyo, Japan Co-patentee before: Toshiba Corp. Patentee before: Tokyo Electron Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Tokyo Electron Ltd. Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Tokyo Electron Ltd. Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Tokyo Electron Ltd. Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: Tokyo Electron Ltd. Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220323 Address after: Tokyo, Japan Patentee after: Tokyo Electron Ltd. Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: Tokyo Electron Ltd. Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |