JP2008192739A5 - - Google Patents

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Publication number
JP2008192739A5
JP2008192739A5 JP2007024212A JP2007024212A JP2008192739A5 JP 2008192739 A5 JP2008192739 A5 JP 2008192739A5 JP 2007024212 A JP2007024212 A JP 2007024212A JP 2007024212 A JP2007024212 A JP 2007024212A JP 2008192739 A5 JP2008192739 A5 JP 2008192739A5
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JP
Japan
Prior art keywords
semiconductor device
chamber
manufacturing
nitriding
cleaning
Prior art date
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Application number
JP2007024212A
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English (en)
Japanese (ja)
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JP4294696B2 (ja
JP2008192739A (ja
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Publication date
Application filed filed Critical
Priority to JP2007024212A priority Critical patent/JP4294696B2/ja
Priority claimed from JP2007024212A external-priority patent/JP4294696B2/ja
Priority to TW097100722A priority patent/TW200842977A/zh
Priority to US12/024,445 priority patent/US20080184543A1/en
Publication of JP2008192739A publication Critical patent/JP2008192739A/ja
Publication of JP2008192739A5 publication Critical patent/JP2008192739A5/ja
Application granted granted Critical
Publication of JP4294696B2 publication Critical patent/JP4294696B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007024212A 2007-02-02 2007-02-02 半導体装置の製造方法および製造装置、ならびに記憶媒体 Expired - Fee Related JP4294696B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007024212A JP4294696B2 (ja) 2007-02-02 2007-02-02 半導体装置の製造方法および製造装置、ならびに記憶媒体
TW097100722A TW200842977A (en) 2007-02-02 2008-01-08 Method and apparatus for manufacturing semiconductor device, and storage medium for executing the method
US12/024,445 US20080184543A1 (en) 2007-02-02 2008-02-01 Method and apparatus for manufacturing semiconductor device, and storage medium for executing the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007024212A JP4294696B2 (ja) 2007-02-02 2007-02-02 半導体装置の製造方法および製造装置、ならびに記憶媒体

Publications (3)

Publication Number Publication Date
JP2008192739A JP2008192739A (ja) 2008-08-21
JP2008192739A5 true JP2008192739A5 (enExample) 2008-10-16
JP4294696B2 JP4294696B2 (ja) 2009-07-15

Family

ID=39674915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007024212A Expired - Fee Related JP4294696B2 (ja) 2007-02-02 2007-02-02 半導体装置の製造方法および製造装置、ならびに記憶媒体

Country Status (3)

Country Link
US (1) US20080184543A1 (enExample)
JP (1) JP4294696B2 (enExample)
TW (1) TW200842977A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8072075B2 (en) * 2006-09-04 2011-12-06 Nicolas Jourdan CuSiN/SiN diffusion barrier for copper in integrated-circuit devices
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5582727B2 (ja) 2009-01-19 2014-09-03 株式会社東芝 半導体装置の製造方法及び半導体装置
KR20120064966A (ko) * 2010-12-10 2012-06-20 에스케이하이닉스 주식회사 반도체 장치 제조 방법
US9330915B2 (en) * 2013-12-10 2016-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Surface pre-treatment for hard mask fabrication
US9385086B2 (en) 2013-12-10 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Bi-layer hard mask for robust metallization profile
JP5856227B2 (ja) * 2014-05-26 2016-02-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2016111104A (ja) * 2014-12-03 2016-06-20 株式会社Ｊｏｌｅｄ 薄膜半導体基板の製造方法
JP6593635B2 (ja) * 2014-12-24 2019-10-23 株式会社ジェイテクト 樹脂製部材の製造方法
KR20240041664A (ko) * 2022-09-23 2024-04-01 주식회사 에이치피에스피 반도체 소자의 제조 방법
JP2025099459A (ja) * 2023-12-21 2025-07-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000063956A1 (en) * 1999-04-20 2000-10-26 Sony Corporation Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device
ATE418158T1 (de) * 1999-08-17 2009-01-15 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
US6756239B1 (en) * 2003-04-15 2004-06-29 Hewlett-Packard Development Company, L.P. Method for constructing a magneto-resistive element
JP4516447B2 (ja) * 2005-02-24 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4509864B2 (ja) * 2005-05-30 2010-07-21 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
DE102006056624B4 (de) * 2006-11-30 2012-03-29 Globalfoundries Inc. Verfahren zur Herstellung einer selbstjustierten CuSiN-Deckschicht in einem Mikrostrukturbauelement
US7718548B2 (en) * 2006-12-06 2010-05-18 Applied Materials, Inc. Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface

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