TWI733838B - 電漿成膜裝置及基板載置台 - Google Patents

電漿成膜裝置及基板載置台 Download PDF

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TWI733838B
TWI733838B TW106120842A TW106120842A TWI733838B TW I733838 B TWI733838 B TW I733838B TW 106120842 A TW106120842 A TW 106120842A TW 106120842 A TW106120842 A TW 106120842A TW I733838 B TWI733838 B TW I733838B
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plasma
gas
substrate
film forming
mounting table
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TW201809347A (zh
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今中雅士
中西敏雄
本多稔
小谷光司
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日商東京威力科創股份有限公司
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Abstract

提供一種可得到具有所欲膜厚均勻性之膜的電漿成膜裝置及用於其之基板載置台。
一種電漿成膜裝置，係具有：腔室，係收納有基板；基板載置台，係在腔室內載置基板；氣體供給機構，係將包含成膜氣體之氣體供給至腔室內；排氣機構，係將腔室內排氣；以及電漿生成機構，係在腔室內生成電漿；基板載置台係具有：直徑較基板要小，且具有載置面之載置台本體；以及載置台本體外側所配置之構成環狀的調整構件；調整構件係設置為可交換，且作為調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來選擇者。

Description

電漿成膜裝置及基板載置台
本發明係關於一種電漿成膜裝置及基板載置台。
在半導體元件之製造工序中，會進行有作為絕緣膜、保護膜、電極膜等的各種膜之成膜。作為此般各種膜之成膜方法已知有一種電漿CVD，係藉由電漿來激發成膜氣體，以在基板上沉積既定膜。
例如，專利文獻1係記載有在腔室內所設置之晶座上，載置作為基板之半導體晶圓，並將作為成膜氣體之矽原料氣體及含氮氣體供給至腔室內，而進一步地供給電漿生成氣體(稀釋氣體)，並藉由使用微波電漿之電漿CVD來在半導體晶圓上成膜出氮化矽膜。
另一方面，在進行電漿處理的情況，已知由於在基板最外周部會與其他部分在電漿狀況上有所差異，故基板最外周部之處理速度便會與基板其他部分有所差異(例如專利文獻2)。
因此，在電漿CVD等的電漿成膜處理中，自以往便會控制成膜氣體或電漿生成氣體(稀釋氣體)的流動，或是控制電漿分布來確保面內膜厚均勻性。
【先前技術文獻】
【專利文獻】
專利文獻1：日本特開2009-246129號公報
專利文獻2：國際公開第2009/008474號小冊
然而，近年來，半導體元件之微細化有所進展，而對成膜處理中之膜厚均勻性的要求提升，僅是成膜氣體或電漿生成氣體(稀釋氣體)的流動控制 或電漿分布之控制仍難以得到所欲膜厚均勻性。
從而，本發明之課題在於提供一種可得到具有所欲膜厚均勻性之膜的電漿成膜裝置及使用於其之基板載置台。
為了解決上述課題，本發明的第1觀點便提供一種電漿成膜裝置，係具有：腔室，係收納有基板；基板載置台，係在該腔室內載置基板；氣體供給機構，係將包含成膜氣體之氣體供給至該腔室內；排氣機構，係將該腔室內排氣；以及電漿生成機構，係在該腔室內生成電漿；藉由該電漿生成機構所生成之電漿來激發該成膜氣體，以將既定之膜成膜於該基板上；其中該基板載置台係具有：直徑較該基板要小，且具有載置面之載置台本體；以及該載置台本體外側所配置之構成環狀的調整構件；該調整構件係設置為可交換，且作為該調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來加以選擇者。
本發明第2觀點便提供一種基板載置台，係在對基板成膜出既定之膜的電漿成膜裝置的腔室內載置基板；具有：直徑較該基板要小，且具有載置面之載置台本體；以及該載置台本體外側所配置之構成環狀的調整構件；該調整構件係設置為可交換，且作為該調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來加以選擇者。
本發明中，作為該電漿生成機構可適當地使用在該腔室內生成微波電漿者。作為該電漿生成機構係可使用具有：產生微波之微波產生裝置；具有放射出微波的狹縫之平面天線；以及構成該腔室之頂壁，且由介電體所構成之微波穿透板；透過該平面天線之該狹縫及該微波穿透板來將微波放射至該腔室內，而將微波電漿供給至該腔室內，以在該腔室內生成微波電漿者。
該載置台本體可具有用以加熱該基板之加熱機構。該氣體供給機構係可使用含氫氣體來作為該成膜氣體。在此情況，作為該成膜氣體係可含有 含氫矽原料來作為該含氫氣體，成膜出含矽膜來作為該既定之膜。又，作為該成膜氣體可為供給該含氫矽原料及含氮氣體，以成膜出氮化矽膜來作為該既定之膜者。在此情況，較佳地係將該基板溫度控制在250~550℃的範圍。
該氣體供給機構可將作為電漿生成氣體的氦氣與該成膜氣體一同地供給至該腔室內。
根據本發明，由於作為基板載置台係具有：直徑較該基板要小，且具有載置面之載置台本體；以及該載置台本體外側所配置之構成環狀的調整構件；該調整構件係設置為可交換，且作為該調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來加以選擇者，故可得到具有所欲膜厚均勻性之膜。
1‧‧‧腔室
2‧‧‧晶座
5‧‧‧加熱器
15‧‧‧氣體導入部
16‧‧‧氣體供給機構
24‧‧‧排氣機構
28‧‧‧微波穿透板
31‧‧‧平面天線
32‧‧‧狹縫
33‧‧‧慢波材
37‧‧‧導波管
38‧‧‧匹配電路
39‧‧‧微波產生裝置
40‧‧‧模式轉換器
50‧‧‧控制部
100‧‧‧電漿成膜裝置
201‧‧‧晶座本體
201a‧‧‧載置面
201b‧‧‧凸緣部
202‧‧‧調整構件
202a‧‧‧內周部
202b‧‧‧外周部
W‧‧‧半導體晶圓(被處理體)
圖1係顯示本發明一實施形態相關之電漿成膜裝置的剖面圖。
圖2係顯示在圖1之電漿成膜裝置中載置基板之晶座(基板載置台)的剖面圖。
圖3係顯示使用0段差者來作為載置基板之晶座(基板載置台)的範例之剖面圖。
圖4係使用段差為圖2與圖3之間者來作為載置基板之晶座(基板載置台)的範例之剖面圖。
圖5係顯示以往的電漿成膜裝置中之晶座(基板載置台)的剖面圖。
圖6係顯示實驗例所使用之晶座的圖式，(a)係以往的晶座，(b)係具有段差被形成為Xmm的調整構件之晶座。
圖7係顯示在使用圖6(a)之晶座的情況以及使用圖6(b)之晶座而讓段差X成為-4mm及-8mm的情況下，起自晶圓中心之位置與規格化後之SiN膜的膜厚之關係的圖式。
圖8係顯示將未添加He氣體及有添加He氣體的情況下之膜厚範圍之平均值(%)與折射率(RI)範圍作圖，而在有添加He氣體的情況，依調整構件之 段差來比較膜厚範圍之平均值(%)與折射率(RI)範圍的圖式。
以下，便參照添附圖式就本發明之實施形態來詳細說明。
<電漿成膜裝置之構成>
圖1係顯示本發明一實施形態相關之電漿成膜裝置的剖面圖。圖1之電漿成膜裝置係構成為RLSA(註冊商標)微波電漿成膜裝置，且會藉由電漿CVD來將氮化矽(SiN)膜成膜於為被處理基板之矽晶圓等的半導體晶圓(以下，僅記為「晶圓」)。
如圖1所示，電漿成膜裝置100係具有氣密地構成並接地之略圓筒狀之腔室1。腔室1之底壁1a的略中央部係形成有圓形之開口部10，底壁1a會與此開口部10連通，並設置有朝下方突出之排氣室11。
腔室1內係設置有用以水平地支撐為被處理基板之晶圓W而作為基板載置台之晶座2。晶座2係具有晶座本體201及其外周所設置之構成環狀的調整構件202。晶座本體201係藉由從排氣室11底部中央延伸於上方而構成圓筒狀之支撐構件3來被加以支撐。晶座本體201係埋設有阻抗加熱型之加熱器5，此加熱器5係藉由從加熱器電源5供電，來加熱晶座本體201，並透過晶座本體201來加熱晶圓W。又，晶座本體201係埋設有電極7，電極7係透過匹配器8來連接有偏壓施加用之高頻電源9。另外，關於晶座2之細節會在之後詳述。
腔室1側壁係設置有構成環狀之氣體導入部15，此氣體導入部15係均等地形成有氣體放射孔15a。此氣體導入部15係連接有氣體供給機構16。
氣體供給機構16會供給含有氫(H)之氣體的Si原料氣體、含氮氣體以及電漿生成氣體。作為含H的Si原料氣體係例示有矽烷(SiH4)或二矽烷(Si2H6)，作為含氮氣體係例示有N2氣體或氨(NH3)，作為電漿生成氣體係例示有Ar氣體或He氣體等的稀有氣體。該等氣體會從各氣體供給源而藉由個別配管及質流控制器等的流量控制器來獨立地流量控制，而供給至氣體導入部15。
另外，亦可在較氣體導入部15要靠下方，設置例如噴淋板等的其他氣體導入部，而從其他氣體導入部來將矽原料氣體等較佳地不會因電漿而完全地解離的氣體供給至要靠近晶圓W且電子溫度較低之區域。
上述排氣室11側面係連接有排氣管23，此排氣管23係連接有包含真空泵及自動壓力控制閥等的排氣機構24。藉由作動排氣機構24之真空泵，便可將腔室1內之氣體均勻地朝排氣室11之空間11a內排出，並透過排氣管23來排氣，而以自動壓力控制閥來將腔室1內控制為既定真空度。
腔室1側壁係設置有在與電漿成膜裝置100所鄰接之搬送室(未圖示)之間進行晶圓W之搬出入用的搬出入口25，以及開閉此搬出入口25之閘閥26。
腔室1上部會成為開口部，該開口部之周緣部會成為環狀之支撐部27。由介電體，例如石英或Al2O3等的陶瓷所構成之圓板狀微波穿透板28會透過密封構件29來氣密地設置於此支撐部27。從而，腔室1內便會被保持為氣密。
微波穿透板28上方係設置為讓對應於微波穿透板28而構成圓板狀的平面天線31會密合於微波穿透板28。此平面天線31會卡固於腔室1之側壁上端。平面天線31會以由導電性材料所構成的圓板來加以構成。
平面天線31係構成為以例如表面會由鍍銀或金的銅板或鋁板所構成，且貫穿有用以放射出微波之複數狹縫32的方式來加以形成。狹縫32之圖案的範例可舉例有將配置為T字狀的2個狹縫32作為一對，而將複數對的狹縫32配置為同心圓狀者。狹縫32之長度或配列間隔會對應於微波之波長(λ g)來加以決定，例如狹縫32會配置為該等間隔會成為λ g/4、λ g/2或λ g。另外，狹縫32亦可為圓形狀、圓弧狀等的其他形狀。進一步地，狹縫32之配置型態並不特別限制，除了同心圓狀之外，亦可配置為例如螺旋狀、放射狀。
此平面天線31上面係密合地設置有由具有較真空要大之介電率的介電體，例如石英以及聚四氟乙烯、聚醯亞胺等的樹脂所構成之慢波材33。慢波材33係具有讓微波波長變得較真空要短，而使得平面天線31變小的機能。
平面天線31與微波穿透板28之間會成為密合狀態，又，慢波板33與平面天線31之間亦會密合。又，以慢波板33、平面天線31、微波穿透板28以及以電漿所形成之等價電路會滿足共振條件的方式來調整微波穿透板28、 慢波材33的厚度。藉由調整慢波材33的厚度，便可調整微波之位相，藉由以平面天線31之接合部會成為駐波之「波峰」的方式而調整厚度，來使得微波的反射極小化，而讓微波之放射能為最大。又，藉由讓慢波板33與微波穿透板28為相同材料，便可防止微波之介面反射。
另外，平面天線31與微波穿透板28之間，以及慢波材33與平面天線31之間亦可分離。
腔室1上面係以覆蓋該等平面天線31及慢波材33的方式來設置有由例如鋁或不鏽鋼、銅等的金屬材所構成之遮蔽蓋體34。腔室1上面與遮蔽蓋體34會藉由密封構件35來加以密封。遮蔽蓋體34係形成有冷卻水流道34a，藉由讓冷卻水流通於其，來冷卻遮蔽蓋體34、慢波材33、平面天線31、微波穿透板28。另外，遮蔽蓋體34會接地。
遮蔽蓋體34上壁中央係形成有開口部36，此開口部係連接有導波管37。此導波管37端部係透過匹配電路38來連接有微波產生裝置39。藉此，微波產生裝置39所產生之例如頻率為2.45GHz的微波便會透過導波管37來傳遞至上述平面天線31。另外，微波頻率可使用8.35GHz、1.98GHz、860MHz、915MHz等各種頻率。
導波管37係具有從上述遮蔽蓋體34之開口部36朝上方延伸而剖面圓形狀的同軸導波管37a，以及在此同軸導波管37a上端部透過模式轉換器40來連接而延伸於水平方向的矩形導波管37b。矩形導波管37b與同軸導波管37a之間的模式轉換器40係具有將在矩形導波管37b內以TE模式來傳遞之微波轉換為TEM模式的機能。同軸導波管37a中心係延伸有內導體41，此內導體41下端部會被接觸固定於平面天線31中心。藉此，微波便會透過同軸導波管37a的內導體41來均勻且有效地傳遞至平面天線31。
電漿成膜裝置100係具有控制部50。控制部50具有：具有控制電漿成膜裝置100之各構成部，例如微波產生裝置39、加熱器電源6、高頻電源9、排氣機構24、氣體供給機構16的閥及流量控制器等的CPU(電腦)之主控制部；輸入裝置(鍵盤、滑鼠等)；輸出裝置(印表機等)；顯示裝置(顯示器等)；以及記憶裝置(記憶媒體)。控制部50之主控制部會基於例如記憶裝置所內建的記憶媒體，或設置於記憶裝置之記憶媒體所記憶的處理配方，來讓電漿成 膜裝置100實行既定動作。
<晶座(基板載置台)之構成>
如上述，晶座(基板載置台)2係由晶座本體201，以及於其外周設置為可交換而構成環狀之調整構件202所構成。晶座本體201及調整構件202都以相同材質所構成，例如由AlN等的陶瓷所構成。
如圖2所示，晶座本體201係其周緣部會切凹為環狀，且在上面具有直徑較晶圓W要小的載置面201a。晶圓W係載置為其外緣部會從載置面201a突出。此時，晶圓W亦可以未圖示之空間而從載置面分離數mm左右來被加以載置。
構成環狀之調整構件202會配置於晶座本體201周圍，而在晶座本體201周緣所形成之凸緣部201b上被加以支撐，且會預先準備有複數種類不同形狀者，而對應於處理來選擇所欲形狀。
調整構件202係準備有載置台本體201相對於載置面201a的段差X會有所差異的複數種類。段差X可在例如-15mm~+1mm的範圍內調整。-15mm係較載置台201之載置面201a要低15mm的位置，+1mm係較載置面201a要高1mm的位置。在段差X為0mm的情況，如圖3所示，係以與載置面201a相同高度來延伸至晶圓W外側，而具有與以往的晶座相同之機能。圖4係段差X為較圖2要小的範例。為了適當地控制晶圓W最外周部之膜厚，段差X較佳地係較載置面201a要低，較佳地係-15~-4mm左右。在段差X為較載置面201a要低的情況，如圖2所示，較佳地，調整構件202係具有：具有與載置面201a相同高度之內周部202a；以及較其要低X的高度的外周部202b，並於該等之間形成有段差X。較佳地段差的位置係較晶圓W外緣要靠外側1~2mm。
如圖5所示，自以往，在成膜出SiN膜等的膜時所使用的晶座2如圖5所示，係具有較晶圓要大之直徑，而載置面201a會延伸至晶圓W外側，且無法調整段差。在此情況，晶座2會藉由加熱器而升溫至250~550℃，例如320℃，在未有電漿的狀態下，相較於晶座2而晶圓W會成為低溫狀態。另一方面，在生成電漿時，因為來自電漿的輸入熱量而會使得晶圓W的溫度會較晶座2要為上升。因此，在晶圓W與晶座2之間便會產生溫度差，而使得Si原料氣體分子會從晶圓W外周朝晶座熱擴散，並會因索勒特效應(Soret effect)而在 晶圓外周部中產生Si原料為低濃度的濃度分配。此般索勒特效應會在氫(H)中變得明顯，而容易在本實施形態所使用之SiH4或Si2H6等的含氫原料中產生。
此般索勒特效應所致之晶圓W最外周部的膜厚不均勻係可藉由調整晶座2最外周部之段差來控制熱擴散而加以抑制。
因此，本實施形態中，作為晶座2係使用由直徑較晶圓W要小的晶座本體201以及在其外周設置為可交換而構成環狀的調整構件202所構成者，且作為調整構件202係準備有複數種類的段差X會有所差異者，而對應於處理來選擇具有所欲段差X者。
<電漿成膜裝置之動作>
接著，便就構成為此般之電漿成膜裝置100的處理動作來加以說明。
首先，開啟閘閥26，從搬出入口25來將為被處理體之晶圓W搬入至腔室1內，而載置於晶座2之晶座本體201上。此時，晶座本體201會被控制為既定溫度。
接著，將腔室1內調整為既定壓力，而從氣體供給機構16透過氣體導入部15來將作為Si原料氣體之例如SiH4氣體、作為含氮氣體的例如N2氣體導入至腔室1內，進一步地依需要來導入作為電漿生成氣體之Ar氣體或He氣體等的稀有氣體。然後，從微波產生裝置39來將既定功率之微波導入至腔室1內，以生成電漿，而藉由電漿CVD來在晶圓W上成膜出SiN膜。
具體而言，係經由匹配電路38來將來自微波產生裝置39的既定功率微波引導至導波管37。被引導至導波管37的微波會以TE模式來傳遞於矩形導波管37b。TE模式之微波會以模式轉換器40來模式轉換為TEM模式，而TEM模式之微波會以TEM模式來傳遞於同軸導波管37a。然後，TEM模式之微波會穿透慢波材33、平面天線31之狹縫32以及微波穿透板28來放射至腔室1內。
微波會作為表面波而僅擴散至微波穿透板28的正下方區域，並藉此來生成表面波電漿。然後，電漿便會朝下方擴散，而晶圓W之配置區域中便會成為高電子密度且低電子溫度的電漿。
Si原料氣體及含氮氣體會藉由電漿來被激發，而解離為例如SiH及NH 等的活性基，該等會在晶圓W上反應來成膜出SiN膜。
此時，如上述，晶座2會藉由加熱器來升溫至250~550℃，例如320℃，而在未有電漿的狀態下，相較於晶座2，晶圓W會成為低溫狀態。另一方面，在生成電漿時，會因來自電漿之輸入熱量而使得晶圓W的溫度會較晶座2要為上升。因此，晶圓W與晶座2之間便會產生溫度差，在未進行晶座2外周部之段差調整的情況，Si原料氣體分子會從晶圓W外周朝晶座熱擴散，並會因索勒特效應而在晶圓外周部中產生Si原料為低濃度的濃度分配。此般索勒特效應如本實施形態般，會在使用SiH4或Si2H6等的含H原料來作為原料氣體的情況下變得明顯。因為產生此般濃度分配，而在大多的情況下，晶圓W最外周部之膜厚會變薄。
自以往，雖會藉由成膜氣體或電漿生成氣體(稀釋氣體)的流動之控制或電漿分布之控制來進行此般晶圓W最外周部之膜厚調整，但僅靠如此仍難以滿足近年來高膜厚均勻性之需求。
雖然此般索勒特效應所致之晶圓W最外周部的膜厚不均勻係可藉由調整晶座2最外周部之段差來控制熱擴散而加以抑制，但僅在晶座2最外周部設定既定段差，仍會難以對應於處理而適當地控制膜厚。
於是，本實施形態中，係讓晶座2成為由晶座本體201以及在其外周設置為可交換而構成環狀之調整構件202所構成者，且作為調整構件202係準備複數種類的段差X會有所差異者，而對應於處理來選擇具有所欲段差X者。
如此般，藉由對應於晶圓W最外周部的膜厚不均勻來選擇適當的調整構件202，便可不管處理條件而使得晶圓W膜厚成為均勻。
另外，與成膜氣體一起被供給而由稀有氣體所構成之電漿生成氣體自以往便為了穩定地生成電漿而被加以使用，稀有氣體中大多使用有利於成本上及工業上的Ar氣體。關於其他稀有氣體係被視為具有與Ar氣體相同之機能，但以往除了Ar氣體以外的稀有氣體卻幾乎不會被使用。
然而，在使用Ar氣體來作為電漿生成氣體的情況，已了解到由於Ar氣體原子量大，故會難以均勻地擴散，而容易使得電漿變得不均勻。相對於此，由於He氣體不僅能達成容易離子化來作為電漿生成氣體的機能，且為 原子量小的輕元素，故容易擴散，而有擴散電漿來均勻化的效果，且易於將膜厚均勻化。
因此，如上述般，藉由選擇段差X為適當者來作為晶座2之調整構件202，且使用He氣體來作為電漿生成氣體，便可更加提高膜厚之均勻性。
又，使用Ar氣體來作為電漿生成氣體的情況，由於原子量大，故會有因電漿損害而使得膜質惡化之虞，但由於He氣體的原子量會較Ar氣體要小，故難以產生Ar氣體般之電漿損害。因此，藉由供給He氣體來作為電漿生成氣體，亦可期待膜質均勻性。
在使用SiH4氣體來作為Si原料氣體，使用N2氣體來作為含氮氣體時的其他條件較佳範圍係如下。
處理溫度(晶座2表面溫度)：200~400℃
處理壓力：6.7~100Pa(50~750mTorr)
SiH4氣體流量：10~200mL/min(sccm)
N2氣體流量：10~200mL/min(sccm)
電漿生成氣體流量：0~1000mL/min(sccm)
微波功率密度：2.43~3.34W/cm2
<實驗例>
接著，便就實驗例來加以說明。
在此，就將圖6(a)所示之以往的晶座適用於圖1所示之電漿成膜裝置的情況，以及適用圖6(b)所示之具有形成有段差Xmm的調整構件之晶座的情況，而藉由電漿CVD來在矽晶圓上成膜出SiN膜。調整構件之段差為-4mm、-8mm。
另外，作為矽晶圓係使用300mm，晶座直徑為340mm。
又，處理條件係如下。
SiH4氣體流量：90sccm
N2氣體流量：70sccm
電漿生成氣體：0sccm
微波功率密度：3.2W/cm2
處理時間：60sec
於圖7顯示該等情況之起自晶圓中心的位置與規格化後之SiN膜的膜厚之關係。如此圖所示，確認到相對於使用以往的晶座的情況，晶圓最外周部之SiN膜的膜厚下降會較大，但藉由在晶圓外側部分配置形成有段差Xmm的調整構件，便可抑制晶圓最外周之SiN膜的膜厚下降，而相較於調整構件之段差X為-4mm的情況，在-8mm的情況者會有較高的晶圓最外周部之SiN膜的膜厚下降之抑制效果。
接著，便就添加He氣體來作為電漿生成氣體的情況，及未添加的情況，改變調整構件之段差X，就在各種處理條件下成膜出SiN膜時的膜厚均勻性及膜質均勻性來加以調查。
處理條件係在以下範圍來加以調整。又，在有添加He氣體的情況係He氣體流量為200~400sccm。
‧成膜條件
SiH4氣體流量：10~200sccm
N2氣體流量：5~200sccm
微波功率密度：2.43~3.44W/cm2
處理時間：15~200sec
膜厚之均勻性係藉由膜厚範圍之平均值(%)來求得。又，作為膜質的指標係使用膜的折射率(RI)，膜質均勻性係藉由折射率範圍來求得。圖8係將各條件下的膜厚範圍之平均值(%)與折射率(RI)範圍作圖之圖式。
如圖8所示，在添加有He氣體的情況，相較於未添加He氣體的情況，膜厚範圍之平均值及折射率範圍都有變小的傾向，又，確認到在添加有He氣體的情況，會藉由調整構件之段差使得膜厚範圍之平均值及折射率範圍改變，而在添加He氣體後，藉由進行調整構件之段差調整，便可使得SiN膜之膜厚均勻性變得更良好。又，確認到藉由結合調整構件之段差調整與He氣體添加，不僅膜厚均勻性，亦可提高膜質均勻性。
<其他適用>
以上，雖已參照添附圖式就本發明實施形態來加以說明，但本發明並不被限制於上述實施形態，可在本發明思及範圍內進行各種變形。
例如，雖上述實施形態中，係以使用RLSA(註冊商標)微波電漿成膜裝 置而藉由電漿CVD來成膜出SiN膜的情況為範例加以說明，但電漿可為其他方式的微波電漿，亦可為感應耦合電漿等的微波電漿以外的電漿。又，本發明係適用於索勒特效應大的使用含氫氣體之成膜處理，例如含Si膜之成膜處理，雖上述實施形態中，係就將本發明適用於使用含H之Si原料氣體的SiN膜之成膜的情況來加以表示，但不限於此，亦可適用於使用其他原料的其他膜之成膜。
又，雖上述實施形態中，係就使用半導體晶圓來作為基板的情況來加以表示，但不限於半導體晶圓，亦可為玻璃基板或陶瓷基板等的其他基板。
2‧‧‧晶座
201‧‧‧晶座本體
201a‧‧‧載置面
201b‧‧‧凸緣部
202‧‧‧調整構件
202a‧‧‧內周部
202b‧‧‧外周部
W‧‧‧半導體晶圓(被處理體)

Claims (16)

  1. 一種電漿成膜裝置，係具有：腔室，係收納有基板；基板載置台，係在該腔室內載置基板；氣體供給機構，係將包含成膜氣體之氣體供給至該腔室內；排氣機構，係將該腔室內排氣；以及電漿生成機構，係在該腔室內生成電漿；藉由該電漿生成機構所生成之電漿來激發該成膜氣體，以將既定之膜成膜於該基板上；其中該基板載置台係具有：直徑較該基板要小，且具有載置面之載置台本體；以及該載置台本體外側所配置之構成環狀的調整構件；該載置台本體係具有用以加熱該基板之加熱機構；該調整構件係設置為可交換，且作為該調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來加以選擇者。
  2. 如申請專利範圍第1項之電漿成膜裝置，其中該電漿生成機構係在該腔室內生成微波電漿。
  3. 如申請專利範圍第2項之電漿成膜裝置，其中該電漿生成機構係具有：產生微波之微波產生裝置；具有放射出微波的狹縫之平面天線；以及構成該腔室之頂壁，且由介電體所構成之微波穿透板；透過該平面天線之該狹縫及該微波穿透板來將微波放射至該腔室內，而將微波電漿供給至該腔室內，以在該腔室內生成微波電漿。
  4. 如申請專利範圍第1至3項中任一項之電漿成膜裝置，其中該氣體供給機構係使用含氫氣體來作為該成膜氣體。
  5. 如申請專利範圍第4項之電漿成膜裝置，其中該成膜氣體係含有含氫矽原料來作為該含氫氣體，成膜出含矽膜來作為該既定之膜。
  6. 如申請專利範圍第5項之電漿成膜裝置，其係供給該含氫矽原料及含氮氣體來作為該成膜氣體，成膜出氮化矽來作為該既定之膜。
  7. 如申請專利範圍第6項之電漿成膜裝置，其中該基板載置台係將該基板之溫度控制在250~550℃的範圍。
  8. 如申請專利範圍第1至3項中任一項之電漿成膜裝置，其中該氣體供給機構係將作為電漿生成氣體的氦氣與該成膜氣體一同地供給至該腔室內。
  9. 一種基板載置台，係在對基板成膜出既定之膜的電漿成膜裝置的腔室內載置基板；具有：直徑較該基板要小，且具有載置面之載置台本體；以及該載置台本體外側所配置之構成環狀的調整構件；該載置台本體係具有用以加熱該基板之加熱機構；該調整構件係設置為可交換，且作為該調整構件係準備有於基板外側位置具有各種段差的複數者，而使用從該等中對應於電漿處理的處理條件來加以選擇者。
  10. 如申請專利範圍第9項之基板載置台，其中該電漿成膜裝置係具有生成電漿之電漿生成機構，藉由該電漿生成機構來在該腔室內生成微波電漿。
  11. 如申請專利範圍第10項之基板載置台，其中該電漿生成機構係具有：產生微波之微波產生裝置；具有放射出微波的狹縫之平面天線；以及構成該腔室之頂壁，且由介電體所構成之微波穿透板；透過該平面天線之該狹縫及該微波穿透板來將微波放射至該腔室內，而將微波電漿供給至該腔室內，以在該腔室內生成微波電漿。
  12. 如申請專利範圍第9至11項中任一項之基板載置台，其中該電漿成膜處理係使用含氫氣體來作為成膜氣體。
  13. 如申請專利範圍第12項之基板載置台，其中該成膜氣體係含有含氫矽原料來作為該含氫氣體，成膜出含矽膜來作為該既定之膜。
  14. 如申請專利範圍第13項之基板載置台，其係供給該含氫矽原料及含氮氣體來作為該成膜氣體，成膜出氮化矽來作為該既定之膜。
  15. 如申請專利範圍第14項之基板載置台，其中該基板載置台係將該基板之溫度控制在250~550℃的範圍。
  16. 如申請專利範圍第12項之基板載置台，其中該電漿成膜處理中，係將作為電漿生成氣體的氦氣與該成膜氣體一同地供給至該腔室內。
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