CN107546096A - 等离子体成膜装置和基板载置台 - Google Patents
等离子体成膜装置和基板载置台 Download PDFInfo
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Abstract
本发明提供一种能够得到具有所希望的膜厚均匀性的膜的等离子体成膜装置和使用它的基板载置台。等离子体成膜装置包括:用于收纳基板的腔室;用于在腔室内载置基板的基板载置台;对腔室内供给包含成膜气体的气体的气体供给机构;对腔室内进行排气的排气机构;和使腔室内生成等离子体的等离子体生成机构,基板载置台包括:比基板的直径小且具有载置面的载置台主体;配置在载置台主体的外侧的形成环状的调整部件,调整部件设置成可更换,并且作为调整部件准备多个在基板的外侧的位置具有各种台阶差的调整部件,能够使用从多个调整部件中根据等离子体处理的处理条件选择的调整部件。
Description
技术领域
本发明涉及等离子体成膜装置和基板载置台。
背景技术
在半导体器件的制造工序中,要进行作为绝缘膜、保护膜、电极膜等各种膜的成膜。作为这样的各种膜的成膜方法,公知的是通过等离子体激励成膜气体,从而在基板上堆积规定的膜的等离子体CVD。
例如,在专利文献1中记载有:在设置于腔室内的基座上,作为基板载置半导体晶片,对腔室内供给硅原料气体和含氮气体作为成膜气体,并且供给等离子体生成气体(稀释气体),通过使用微波等离子体的等离子体CVD,在半导体晶片上成膜氮化硅膜的技术。
另一方面,在进行等离子体处理时,公知的是,由于在基板的最外周部与其它的部分的等离子体的状况不同,所以在基板的最外周部的处理速率与基板的其它部分是不同的(例如专利文献2)。
因此,在等离子体CVD等的等离子体成膜处理中,在现有技术中,通过控制成膜气体和等离子体生成气体(稀释气体)的流动或控制等离子体的分布,来确保面内膜厚均匀性。
现有技术文献
专利文献
专利文献1:特开2009-246129号公报
专利文献2:国际公开第2009/008474号公报
发明内容
发明想要解决的技术问题
但是,近来,半导体元件的精细化进展,对成膜处理中的膜厚均匀性的要求提高,仅通过成膜气体和等离子体生成气体(稀释气体)的流动的控制和等离子体的分布的控制,难以得到所希望的膜厚均匀性。
但是,本发明的课题在于提供一种能够得到具有所希望的膜厚均匀性的膜的等离子体成膜装置和用于该等离子体成膜装置中的基板载置台。
用于解决技术问题的技术方案
为了解决上述课题,本发明的第一观点提供一种等离子体成膜装置,其特征在于,包括:用于收纳基板的腔室;用于在所述腔室内载置基板的基板载置台;对所述腔室内供给包含成膜气体的气体的气体供给机构;对所述腔室内进行排气的排气机构;和使所述腔室内生成等离子体的等离子体生成单元,通过所述等离子体生成单元,由所生成的等离子体激励所述成膜气体来在所述基板上成膜规定的膜,所述基板载置台包括:直径比所述基板的直径小且具有载置面的载置台主体;配置在所述载置台主体的外侧的呈环状的调整部件,所述调整部件设置成可更换,并且作为所述调整部件准备多个在基板的外侧的位置具有各种台阶差的调整部件,能够使用从多个所述调整部件中根据等离子体处理的处理条件选择的调整部件。
根据本发明的第二观点,提供一种基板载置台,其用于在对基板成膜规定的膜的等离子体成膜装置的腔室中载置基板,所述基板载置台的特征在于,包括:直径比所述基板的直径小且具有载置面的载置台主体;和配置在所述载置台主体的外侧的呈环状的调整部件,所述调整部件设置成可更换,并且作为所述调整部件准备多个在基板的外侧的位置具有各种台阶差的调整部件,能够使用从多个所述调整部件中根据等离子体处理的处理条件选择的调整部件。
在本发明中,作为所述等离子体生成单元,能够适当地使用在所述腔室内生成微波等离子体的等离子体生成单元。所述等离子体生成单元包括:产生微波的微波产生装置;具有辐射微波的隙缝的平面天线;和构成所述腔室的顶壁的由电介质体构成的微波透射板,使微波经由所述平面天线的所述隙缝和所述微波透射板辐射到所述腔室内,并将微波供给到所述腔室内,使所述腔室内产生微波等离子体。
所述载置台主体可以具有用于加热所述基板的加热单元。所述等离子体成膜处理使用含氢气体作为成膜气体。在该情况下,所述成膜气体包含含氢硅原料作为所述含氢气体,成膜含硅膜作为所述规定的膜。另外,作为所述成膜气体,也可以供给所述含氢硅原料和含氮气体,成膜氮化硅膜作为所述规定的膜。在该情况下,所述基板载置台将所述基板的温度控制在250~550℃的范围内。所述气体供给机构,将作为等离子体生成气体的氦气与所述成膜气体一起供给到所述腔室内。
发明效果
依据本发明,作为基板载置台,使用包括:比所述基板的直径小的、并且具有载置面的载置台主体;和配置在所述载置台主体的外侧的、并且形成为环状的调整部件的基板载置台,所述调整部件可更换地设置,并且作为所述调整部件准备多个,使其与基板的外侧的位置具有各种台阶差,能够根据等离子体处理的处理条件从多种所述调整部件中选择使用,因此能够得到具有所希望的膜厚均匀性的膜。
附图说明
图1是表示本发明的一个实施方式的等离子体成膜装置的截面图。
图2是表示图1的等离子体成膜装置中,载置基板的基座(基板载置台)的截面图。
图3是表示作为载置基板的基座(基板载置台),使用台阶差为0的基座的例子的截面图。
图4是表示作为载置基板的基座(基板载置台),使用台阶差为图2与图3之间的台阶差的基座的例子的截面图。
图5是表示现有技术的等离子体成膜装置中的基座(基板载置台)的截面图。
图6是表示实验例中使用的基座的图,图6的(a)是现有技术的基座,图6的(b)是具有形成有台阶差Xmm的调整部件的基座。
图7是关于使用了图6的(a)的基座的情况、和使用了图6的(b)的基座并使台阶差X形成为-4mm和-8mm的情况,表示距离晶片的中心的位置与标准化的SiN膜的膜厚的关系的图。
图8是描绘没有添加He气体和添加He气体的情况下的膜厚范围的平均值(%)与折射率(RI)的范围,在添加了He气体的情况下,针对调整部件的每一台阶差,比较地表示膜厚范围的平均值(%)与折射率(RI)的范围的图。
附图标记说明
1:腔室
2:基座
5:加热器
15:气体导入部
16:气体供给机构
24:排气机构
28:微波透射板
31:平面天线
32:隙缝
33:慢波板
37导波管
38:匹配电路
39:微波产生装置
40:模式转换器
50:控制部
100:等离子体成膜装置
201:基座主体
201a:载置面
201b:凸缘部
202:调整部件
202a:内周部
202b:外周部
W:半导体晶片(被处理体)。
具体实施方式
以下,参照附图对本发明实施方式进行详细的说明。
<等离子体成膜装置的构成>
图1是表示本发明的一个实施方式的等离子体成膜装置的截面图。图1的等离子体成膜装置作为RLSA(注册商标)微波等离子体成膜装置构成,是在作为被处理基板的硅晶片等的半导体晶片(以下简称为“晶片”)通过等离子体CVD成膜氮化硅(SiN)膜的装置。
如图1所示,等离子体成膜装置100气密地构成,具有被接地的大致圆筒状的腔室1。在腔室1的底壁1a的大致中央部形成有圆形的开口部10,在底壁1a与该开口部10连通,设置有向下方突出的排气室11。
在腔室1内设置有基座2,该基座2作为用于水平地支承作为被处理基板的晶片W的基板载置台。基座2具有基座主体201和设置在其外周的呈环状的调整部件202。基座主体201由从排气室11的底部中央向上方延伸的呈圆筒状的支承部件3支承。在该基座主体201埋入有电阻加热型的加热器5,通过从加热器电源6对该加热器5供电来加热基座主体201,并且经由基座主体201加热晶片W。另外,在基座主体201埋入有电极7,电极7经由匹配器8连接有偏压施加用的高频电源9。此外,关于基座2的详细内容在后文叙述。
在腔室1的侧壁设置有呈环状的气体导入部15,在该气体导入部15均等地形成有气体辐射孔15a。该气体导入部15连接有气体供给机构16。
气体供给机构16供给作为包含氢(H)的气体的Si原料气体、含氮气体和等离子体生成气体。作为含有H的Si原料气体能够例示甲硅烷(SiH4)和乙硅烷(Si2H6),作为含有氮的气体能够例示N2气体和氨气(NH3),作为等离子体生成气体能够例示Ar气体和He气体等的稀有气体。这些气体分别从各自的气体供给源经由独立的配管通过质量流量控制器等的流量控制器独立地被控制流量,供给到气体导入部15。
此外,在比气体导入部15靠下方设置例如喷淋板等的其它的气体导入部,也可以从其它的气体导入部将优选通过硅原料气体等的等离子体没有被完全解离的气体供给到更靠近晶片W的电子温度更低的区域。
在上述排气室11的侧面连接有排气管23,在该排气管23连接有包括真空泵或自动压力控制阀等的排气机构24。通过使排气机构24的真空泵动作,腔室1内的气体向排气室11的空间11a内均匀地排出经由排气管23被排气,能够经由自动压力控制阀将腔室1内控制为规定的真空度。
在腔室1的侧壁设置有:用于在与和等离子体成膜装置100邻接的搬送室(未图示)之间进行晶片W的搬入搬出的搬入搬出口25;和开闭该搬入搬出口25的闸阀26。
腔室1的上部成为开口部,该开口部的周缘部成为环状的支承部27。在该支承部27经由密封部件29设置有由电介质、例如石英Al2O3等的陶瓷构成的圆板状的微波透射板28。因此,腔室1内被气密地保持。
在微波透射板28的上方,形成与微波透射板28对应的圆板状的平面天线31以与微波透射板28紧贴的方式设置。该平面天线31卡止在腔室1的侧壁的上端。平面天线31由导电型材料形成的圆板构成。
平面天线31例如由表面镀了银或金的铜板或铝板构成,形成为用于辐射微波的多个隙缝32以贯通的方式形成的结构。作为隙缝32的图案的例子,能够举例以配置为T字状的2个隙缝32为一对、多对的隙缝32配置为同心圆状的图案。隙缝32的长度和配置间隔对应于微波的波长(λg)来决定,例如隙缝32以它们的间隔成为λg/4、λg/2或者λg的方式配置。此外,隙缝32也可以形成为圆形、圆弧状等的其它的形状。并且,隙缝32的配置形态没有特别的限定,除了同心圆状以外,也可以配置成螺旋状、辐射状。
慢波板33与平面天线31紧贴的方式设置在该平面天线31的上面,该慢波板33由具有比真空大的介电率的电介质体、例如石英、聚四氟乙烯,聚酰亚胺等的树脂构成。慢波板33具有使微波的波长比在真空中短、缩小平面天线31的功能。
平面天线31与微波透射板28之间成为紧贴的状态,另外,慢波板33与平面天线31之间也紧贴。另外,慢波板33、平面天线31、微波透射板28和由等离子体形成的等效电路以满足共振条件的方式调整微波透射板28、慢波板33的厚度。通过调整慢波板33的厚度,能够调整微波的相位,通过平面天线31的接合部成为驻波的“波腹”的方式调整厚度,由此微波的反射能够极小化,微波的辐射能量变得最大。另外,通过使慢波板33与微波透射板28形成为相同的材质,能够防止微波的界面反射。
此外,平面天线31与微波透射板28之间,另外,慢波板33于平面天线31之间也可以离开。
在腔室1的上面,以覆盖这些平面天线31和慢波板33的方式,例如设置有由铝、不锈钢、铜等的金属材料构成的屏蔽盖体34。腔室1的上面和屏蔽盖体34也可以由密封部件35密封。在屏蔽盖体34形成有冷却水流路34a,通过使冷却水在其中流通,使屏蔽盖体34、慢波板33、平面天线31、微波透射板28冷却。此外,屏蔽盖体34被接地。
在屏蔽盖体34的上壁的中央形成有开口部36,在该开口部连接有波导管37。在该波导管37的端部经由匹配电路38连接有微波产生装置39。由此,通过微波产生装置39所产生的例如频率2.45GHz的微波经由波导管37向上述平面天线31传播。此外,作为微波的频率,能够使用8.35GHz、1.98GHz、860MHz、915MHz等各种频率。
波导管37包括:从上述屏蔽盖体34的开口部36向上方延伸的截面圆形的同轴波导管37a;和在该同轴波导管37a的上端部经由模式转换器40连接的在水平方向上延伸的矩形波导管37b。在矩形波导管37b与同轴波导管37a之间的模式转换器40具有将在矩形波导管37b内以TE模式传播的微波转换成TEM模式的功能。内导体41在同轴波导管37a的中心延伸,该内导体41的下端部连接固定在平面天线31的中心。由此,微波经由同轴波导管37a的内导体41向平面天线31均匀地高效率地传播。
等离子体成膜装置100具有控制部50。控制部50包括:具有CPU(计算机)的主控制部、输入装置(键盘、鼠标等)、输出装置(打印机等)、显示装置(显示器等)、存储装置(存储介质),其中上述CPU对等离子体成膜装置100的各部、例如微波产生装置39、加热器电源6、高频电源9、排气机构24、气体供给机构16的阀或流量控制器等进行控制。控制部50的主控制部例如基于内置在存储装置中的存储介质、或者设置在存储装置中的存储介质中所存储的处理方案,使等离子体成膜装置100执行规定的动作。
<基座(基板载置台)的结构>
如上所述,基座(基板载置台)2包括:基座主体201;和设置在其外周的可更换的形成为环状的调整部件202。基座主体201和调整部件202均由相同材质构成,例如由AlN等的陶瓷构成。
如图2所示,基座主体201其周缘部被环状地切去,在上表面具有比晶片W小径的载置面201a。晶片W以其外缘部从载置面201a突出的方式载置。这时,晶片W也可以通过未图示的间隔物与载置面离开几mm程度地载置。
呈环状的调整部件202配置在基座主体201的周围,构成为被支承在形成于基座主体201的周缘的凸缘部201b上,预先准备了多种形状不同的部件,可根据处理选择所希望的形状的部件。
调整部件202准备了相对于基座主体201的载置面201a的台阶差X不同的多种部件。台阶差X例如能够在-15mm~+1mm的范围内调整。-15mm是比基座201的载置面201a低15mm的位置,+1mm是比载置面201a高1mm的位置。在台阶差X为0mm的情况下,如图3所示,以与载置面201a相同的高度延伸到晶片W的外侧,具有与现有技术的基座相同的功能。图4是台阶差X比图2小的例子。为了适当地控制晶片W的最外周部的膜厚,优选台阶差X比载置面201a低,优选为-15~-4mm的程度。在台阶差X比载置面201a低的情况下,如图2所示,调整部件202包括具有与载置面201a相同的高度的内周部202a,和比其低X的高度的外周部202b,在它们之间形成台阶差X。台阶差X的位置优选比晶片W的外缘靠外侧1~2mm。
如图5所示,现有技术中,在对SiN膜等的膜进行成膜时使用的基座2,如图5所示具有比晶片大的直径,载置面201a延伸到晶片W的外侧,不能进行台阶差调整。在该情况下,基座2通过加热器升温到250~550℃、例如320℃,在没有等离子体的状态下,相比于基座2,晶片W成为低温的状态。另一方面,在生成了等离子体时,通过来自等离子体的热输入,晶片W相比基座2温度升高。因此在晶片W和基座2之间产生温度差,Si原料气体的分子从晶片W的外周向基座进行热扩散,由于索瑞效应(soret effect),在晶片外周部中产生Si原料成为低浓度的浓度梯度。这样的索瑞效应在氢(H)中显著,在本实施方式中使用的SiH4或Si2H6等的含有H的原料中容易产生。
基于这样的索瑞效应等产生的晶片W的最外周部的膜厚的不均匀,能够通过调整基座2的最外周部的台阶差从而控制热扩散来进行抑制。
因此,在本实施方式中,作为基座2使用由比晶片W小径的基座主体201和在其外周可更换地设置的呈环状的调整部件202构成的部件,作为调整部件202准备台阶差X不同的多种部件,根据处理选择具有所希望的台阶差X的部件。
<等离子体成膜装置的动作>
接着,关于这样构成的等离子体成膜装置100的处理动作进行说明。
首先,打开闸阀26,从搬入搬出口25将作为被处理体的晶片W搬入到腔室1内,载置在基座2的基座主体201上。这时,基座主体201被控制为规定的温度。
接着,将腔室1内调整为规定压力,从气体供给机构16经由气体导入部15将作为Si原料气体的例如SiH4气体、作为含有氮的气体的例如N2气体导入到腔室1内,并且根据需要将作为等离子体生成气体的Ar气体或He气体等的稀有气体导入。并且,从微波产生装置39将规定功率的微波导入到腔室1内来生成等离子体,通过等离子体CVD在晶片W上成膜SiN膜。
具体而言,将来自微波产生装置39的规定功率的微波经由匹配电路38导入到波导管37。导入到波导管37的微波在矩形波导管37中以TE模式传播。TE模式的微波由模式转换其40转换为TEM模式,TEM模式的微波在同轴波导管37a中以TEM模式传播。并且,TEM模式的微波透过慢波件33、平面天线31的隙缝32和微波透射板28辐射到腔室1中。
微波作为表面波仅在微波透射板28的正下方区域中扩散,由此生成表面波等离子体。然后,等离子体向下方扩散,在晶片W的配置区域成为高电子密度且低电子温度的等离子体。
Si原料气体和含有氮的气体由等离子体激励,例如解离为SiH或NH等的活性种,它们在晶片W上进行反应成膜SiN膜。
这时,如上所述,基座2通过加热器被升温到250~550℃、例如320℃,在没有等离子体的状态下,相比于基座2,晶片W成为低温的状态。另一方面,当生成了等离子体时,由于来自等离子体的热输入,晶片W相比于基座2温度上升。因此,在晶片W与基座2之间产生温度差,在不进行基座2的外周部的台阶差调整的情况下,Si原料气体的分子从晶片W的外周向基座热扩散,由于索瑞效应,在晶片外周部中有时产生Si原料成为低浓度的浓度梯度。这样的索瑞效应,如本实施方式所示作为原料气体使用SiH4或Si2H6等的含有H的原料的情况下显著。通过产生这样的浓度梯度,在大多情况下,晶片W的最外周部的膜厚变薄。
在现有技术中,这样的晶片W的最外周部的膜厚的调整通过成膜气体和等离子体生成气体(稀释气体)的流动的控制和等离子体的分布的控制来进行,但仅这样做难以满足最近的高的膜厚均匀性的要求。
基于这样的索瑞效应等产生的晶片W的最外周部的膜厚的不均匀,通过调整基座2的最外周部的台阶差来控制热扩散,从而能够加以一致,但仅在基座2的最外周部设置规定的台阶差,对应于处理的适当的膜厚控制是困难的。
因此,在本实施方式中,基座2由基座主体201、和在其外周可更换地设置的呈环状的调整部件202构成,作为调整部件202准备台阶差X不同的多种部件,根据处理来选择具有所希望的台阶差X的部件。
像这样,通过根据在晶片W的最外周部的膜厚的不均匀选择适当的调整部件202,无论处理条件如何都能够使晶片W的膜厚均匀。
但是,与成膜气体一起供给的稀有气体构成的等离子体生成气体,为了稳定地生成等离子体在现有技术中被使用,在稀有气体中,在成本方面和工业方面比较有利的Ar气体被广泛使用。关于其它的稀有气体,看作是与Ar气体具有同样的功能,在现有技术中,除了Ar气体以外的稀有气体几乎不被使用。
但是,在作为等离子体生成气体使用Ar气体的情况下,由于Ar气体的原子量较大,难以均匀地扩散,认为等离子体容易变得不均匀。对此,He气体不仅发挥作为容易例子化的等离子体生成气体的功能,而且由于是原子量较小的氢元素,容易扩散,具有等离子体扩散均匀化的效果,容易使膜厚均匀化。
因此,如上所述,由此通过作为基座2的调整部件202选择台阶差X适当的部件,并且作为等离子体生成气体使用He气体,由此能够更加提高膜厚的均匀性。
另外,在作为等离子体生成气体使用了Ar气体的情况下,由于原子量较大,有可能由于等离子体损伤产生膜质恶化,由于He气体比Ar气体原子量小,难以造成Ar气体那样的等离子体损伤。因此,通过作为等离子体生成气体供给He气体,也能够期待膜质均匀性。
作为Si原料气体使用SiH4气体,作为含有氮的气体使用N2气体时的其它的条件的优选范围如下所述。
处理温度(基座2表面的温度):200~400℃
处理压力:6.7~100Pa(50~750mTorr)
SiH4气体流量:10~200mL/min(sccm)
N2气体流量:10~200mL/min(sccm)
等离子体生成气体流量:0~1000mL/min(sccm)
微波功率密度:2.43~3.34W/cm2
<实验例>
接着关于实验例进行说明。
这里,在图1所示的等离子体成膜装置中,关于使用了图6的(a)的现有技术的记作的情况和使用了图6的(b)所示的具有形成了台阶差Xmm的调整部件的基座的情况,通过等离子体CVD在硅晶片上成膜SiN膜。调整部件的台阶差为-4mm、-8mm。
此外,作为硅晶片使用300mm,基座的直径形成为340mm。
另外,作为处理条件如下所述。
SiH4气体流量:90sccm
N2气体流量:70sccm
等离子体生成气体流量:0sccm
微波功率密度:3.2W/cm2
处理时间:60sec
图7中表示这些条件的情况下的距晶片的中心的位置与标准化的SiN膜的膜厚的关系。如该图所示,确认了在使用现有的基座的情况下,在晶片最外周部的SiN膜的膜厚降低较大,相对于此,通过在晶片的外侧部分配置形成了台阶差Xmm的调整部件,能够抑制在晶片最外周部的SiN膜的膜厚降低,调整部件的台阶差X为-8mm的情况相比于调整部件的台阶差X为-4mm的情况,抑制晶片最外周部的SiN膜的膜厚降低的效果较高。
接着,关于作为等离子体生成气体添加了He气体的情况、没有添加的情况,调差使调整部件的台阶差X变化,在各种处理条件成膜SiN膜时的膜厚均匀性和膜质均匀性。
处理条件在以下的范围进行了调整。另外,在有He气体添加的情况下,使He气体流量为200~400sccm。
·成膜条件
SiH4气体流量:10~200sccm
N2气体流量:5~200sccm
微波功率密度:2.43~3.44W/cm2
处理时间:15~200sec
膜厚的均匀性通过膜厚范围的平均值(%)求得。另外,作为膜质的指标使用膜的折射率(RI),膜质的均匀性通过折射率范围求得。图8是描绘了各壳体中的膜厚范围的平均值(%)和折射率(RI)的范围的图。
如图8所示,在添加了He气体的情况下,与没有添加He气体的情况相比较,膜厚范围的平均值和折射率范围均有变小的趋势,另外,在添加了He气体的情况下,由于调整部件的台阶差,膜厚范围的平均值和折射率范围变化,并且在添加了He气体的基础上,通过进行调整部件的台阶差的调整,能够确认SiN膜的膜厚均匀性更加良好。另外,通过将调整部件的台阶差的调整和He气体添加相组合,能够确认不仅膜厚的均匀性提高,而且膜质的均匀性提高。
<其它的应用>
以上,参照附图对本发明的实施方式进行了说明,但本发明并不限定于上述的实施方式,能够在本发明的技术思想的范围内进行各种变形。
例如,在上述实施方式中,以使用RLSA(注册商标)微波等离子体成膜装置,通过等离子体CVD成膜SiN膜的情况为例进行了说明,但作为等离子体,也可以是其它方式的微波等离子体,也可以是感应耦合等离子体等的微波等离子体以外的等离子体。另外,本发明适合于使用了索瑞效应较大的含有H的气体的成膜处理,例如含Si膜的成膜处理,在上述实施方式中,例示了关于使用了含有H的Si原料气体的SiN膜的成膜中应用本发明的情况,但并不限定于此,也可以适用于使用了其它的原料的其它膜的成膜。
另外,在上述实施方式中,例示了关于作为基板使用了半导体晶片的情况,但并不限定于半导体晶片,也可以是玻璃基板或陶瓷基板等的其它的基板。
Claims (18)
1.一种等离子体成膜装置,其特征在于,包括:
用于收纳基板的腔室;
用于在所述腔室内载置基板的基板载置台;
对所述腔室内供给包含成膜气体的气体的气体供给机构;
对所述腔室内进行排气的排气机构;和
使所述腔室内生成等离子体的等离子体生成单元,
通过所述等离子体生成单元,由所生成的等离子体激励所述成膜气体来在所述基板上成膜规定的膜,
所述基板载置台包括:直径比所述基板的直径小且具有载置面的载置台主体;配置在所述载置台主体的外侧的呈环状的调整部件,
所述调整部件设置成可更换,并且作为所述调整部件准备多个在基板的外侧的位置具有各种台阶差的调整部件,能够使用从多个所述调整部件中根据等离子体处理的处理条件选择的调整部件。
2.如权利要求1所述的等离子体成膜装置,其特征在于:
所述等离子体生成单元是用于使所述腔室内生成微波等离子体的部件。
3.如权利要求2所述的等离子体成膜装置,其特征在于:
所述等离子体生成单元包括:产生微波的微波产生装置;具有辐射微波的隙缝的平面天线;和构成所述腔室的顶壁的由电介质体构成的微波透射板,
使微波经由所述平面天线的所述隙缝和所述微波透射板辐射到所述腔室内,并将微波供给到所述腔室内,使所述腔室内产生微波等离子体。
4.如权利要求1~3中任一项所述的等离子体成膜装置,其特征在于:
所述载置台主体具有用于加热所述基板的加热单元。
5.如权利要求1~4中任一项所述的等离子体成膜装置,其特征在于:
所述气体供给机构使用含氢气体作为成膜气体。
6.如权利要求5所述的等离子体成膜装置,其特征在于:
所述成膜气体包含含氢硅原料作为所述含氢气体,成膜含硅膜作为所述规定的膜。
7.如权利要求6所述的等离子体成膜装置,其特征在于:
作为所述成膜气体供给所述含氢硅原料和含氮气体,成膜氮化硅膜作为所述规定的膜。
8.如权利要求7所述的等离子体成膜装置,其特征在于:
所述基板载置台将所述基板的温度控制在250~550℃的范围内。
9.如权利要求1~8中任一项所述的等离子体成膜装置,其特征在于:
所述气体供给机构将作为等离子体生成气体的氦气与所述成膜气体一起供给到所述腔室内。
10.一种基板载置台,其用于在对基板成膜规定的膜的等离子体成膜装置的腔室中载置基板,所述基板载置台的特征在于,包括:
直径比所述基板的直径小且具有载置面的载置台主体;和配置在所述载置台主体的外侧的呈环状的调整部件,
所述调整部件设置成可更换,并且作为所述调整部件准备多个在基板的外侧的位置具有各种台阶差的调整部件,能够使用从多个所述调整部件中根据等离子体处理的处理条件选择的调整部件。
11.如权利要求10所述的基板载置台,其特征在于:
所述等离子体成膜装置具有生成等离子体的等离子体生成单元,通过所述等离子体生成单元在所述腔室内生成微波等离子体。
12.如权利要求11所述的基板载置台,其特征在于:
所述等离子体生成单元包括:产生微波的微波产生装置;具有辐射微波的隙缝的平面天线;和构成所述腔室的顶壁的由电介质体构成的微波透射板,
使微波经由所述平面天线的所述隙缝和所述微波透射板辐射到所述腔室内,并将微波供给到所述腔室内,使所述腔室内产生微波等离子体。
13.如权利要求10~12中任一项所述的基板载置台,其特征在于:
所述载置台主体具有用于加热所述基板的加热单元。
14.如权利要求10~13中任一项所述的基板载置台,其特征在于:
所述等离子体成膜处理使用含氢气体作为成膜气体。
15.如权利要求14所述的基板载置台,其特征在于:
所述成膜气体包含含氢硅原料作为所述含氢气体,成膜含硅膜作为所述规定的膜。
16.如权利要求15所述的基板载置台,其特征在于:
作为所述成膜气体供给所述含氢硅原料和含氮气体,成膜氮化硅膜作为所述规定的膜。
17.如权利要求16所述的基板载置台,其特征在于:
所述基板载置台将所述基板的温度控制在250~550℃的范围内。
18.如权利要求14~17中任一项所述的基板载置台,其特征在于:
在所述等离子体成膜处理中,将作为等离子体生成气体的氦气与所述成膜气体一起供给到所述腔室内。
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