JP2020147839A5 - - Google Patents
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- JP2020147839A5 JP2020147839A5 JP2019049093A JP2019049093A JP2020147839A5 JP 2020147839 A5 JP2020147839 A5 JP 2020147839A5 JP 2019049093 A JP2019049093 A JP 2019049093A JP 2019049093 A JP2019049093 A JP 2019049093A JP 2020147839 A5 JP2020147839 A5 JP 2020147839A5
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- JP
- Japan
- Prior art keywords
- substrate
- gas
- treated
- processed
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 8
- 229910021389 graphene Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019049093A JP7178935B2 (ja) | 2019-03-15 | 2019-03-15 | グラフェン構造体を形成する方法および装置 |
| US17/593,220 US12014907B2 (en) | 2019-03-15 | 2020-02-26 | Method and device for forming graphene structure |
| KR1020217032269A KR102650973B1 (ko) | 2019-03-15 | 2020-02-26 | 그래핀 구조체를 형성하는 방법 및 장치 |
| PCT/JP2020/007748 WO2020189202A1 (ja) | 2019-03-15 | 2020-02-26 | グラフェン構造体を形成する方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019049093A JP7178935B2 (ja) | 2019-03-15 | 2019-03-15 | グラフェン構造体を形成する方法および装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020147839A JP2020147839A (ja) | 2020-09-17 |
| JP2020147839A5 true JP2020147839A5 (enExample) | 2022-01-06 |
| JP7178935B2 JP7178935B2 (ja) | 2022-11-28 |
Family
ID=72430399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019049093A Active JP7178935B2 (ja) | 2019-03-15 | 2019-03-15 | グラフェン構造体を形成する方法および装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12014907B2 (enExample) |
| JP (1) | JP7178935B2 (enExample) |
| KR (1) | KR102650973B1 (enExample) |
| WO (1) | WO2020189202A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022079159A (ja) * | 2020-11-16 | 2022-05-26 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| US11515163B2 (en) * | 2021-01-06 | 2022-11-29 | Applied Materials, Inc. | Low temperature graphene growth |
| JP2022178748A (ja) * | 2021-05-21 | 2022-12-02 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP2024004544A (ja) | 2022-06-29 | 2024-01-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8119032B2 (en) * | 2006-02-07 | 2012-02-21 | President And Fellows Of Harvard College | Gas-phase functionalization of surfaces including carbon-based surfaces |
| US7947544B2 (en) | 2007-11-27 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device, film deposition method, and film deposition apparatus |
| CN102144309A (zh) * | 2008-07-08 | 2011-08-03 | 桑迪士克3D有限责任公司 | 基于碳的电阻率-切换材料及其形成方法 |
| WO2011025045A1 (ja) * | 2009-08-31 | 2011-03-03 | 独立行政法人科学技術振興機構 | グラフェン薄膜とその製造方法 |
| JP5851804B2 (ja) | 2011-11-09 | 2016-02-03 | 東京エレクトロン株式会社 | 前処理方法、グラフェンの形成方法及びグラフェン製造装置 |
| EP2801551A1 (en) | 2013-05-08 | 2014-11-12 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Graphene with very high charge carrier mobility and preparation thereof |
| JP6002087B2 (ja) | 2013-05-29 | 2016-10-05 | 東京エレクトロン株式会社 | グラフェンの生成方法 |
| WO2015054138A1 (en) * | 2013-10-10 | 2015-04-16 | William Marsh Rice University | Improved fatty acid productivity |
| EP2942326A1 (en) | 2014-05-05 | 2015-11-11 | Basf Se | Substrate pre-treatment for consistent graphene growth by chemical deposition |
| KR101614322B1 (ko) * | 2014-07-07 | 2016-04-21 | 재단법인 나노기반소프트일렉트로닉스연구단 | 층수가 제어된 그래핀의 제조방법 및 그를 이용한 전자소자의 제조방법 |
| US9382118B2 (en) * | 2014-11-11 | 2016-07-05 | Hanwha Techwin Co., Ltd. | Method of manufacturing graphene |
| KR102783987B1 (ko) * | 2018-08-03 | 2025-03-21 | 삼성전자주식회사 | 나노결정질 그래핀의 형성방법 및 이를 포함하는 소자 |
-
2019
- 2019-03-15 JP JP2019049093A patent/JP7178935B2/ja active Active
-
2020
- 2020-02-26 KR KR1020217032269A patent/KR102650973B1/ko active Active
- 2020-02-26 WO PCT/JP2020/007748 patent/WO2020189202A1/ja not_active Ceased
- 2020-02-26 US US17/593,220 patent/US12014907B2/en active Active
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