JP7178935B2 - グラフェン構造体を形成する方法および装置 - Google Patents

グラフェン構造体を形成する方法および装置 Download PDF

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JP7178935B2
JP7178935B2 JP2019049093A JP2019049093A JP7178935B2 JP 7178935 B2 JP7178935 B2 JP 7178935B2 JP 2019049093 A JP2019049093 A JP 2019049093A JP 2019049093 A JP2019049093 A JP 2019049093A JP 7178935 B2 JP7178935 B2 JP 7178935B2
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gas
substrate
processed
microwave
plasma
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JP2020147839A (ja
JP2020147839A5 (enExample
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亮太 井福
貴士 松本
正仁 杉浦
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019049093A priority Critical patent/JP7178935B2/ja
Priority to US17/593,220 priority patent/US12014907B2/en
Priority to KR1020217032269A priority patent/KR102650973B1/ko
Priority to PCT/JP2020/007748 priority patent/WO2020189202A1/ja
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/02612—Formation types
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019049093A 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置 Active JP7178935B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019049093A JP7178935B2 (ja) 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置
US17/593,220 US12014907B2 (en) 2019-03-15 2020-02-26 Method and device for forming graphene structure
KR1020217032269A KR102650973B1 (ko) 2019-03-15 2020-02-26 그래핀 구조체를 형성하는 방법 및 장치
PCT/JP2020/007748 WO2020189202A1 (ja) 2019-03-15 2020-02-26 グラフェン構造体を形成する方法および装置

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JP2019049093A JP7178935B2 (ja) 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置

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JP2020147839A JP2020147839A (ja) 2020-09-17
JP2020147839A5 JP2020147839A5 (enExample) 2022-01-06
JP7178935B2 true JP7178935B2 (ja) 2022-11-28

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JP2022079159A (ja) * 2020-11-16 2022-05-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
US11515163B2 (en) * 2021-01-06 2022-11-29 Applied Materials, Inc. Low temperature graphene growth
JP2022178748A (ja) * 2021-05-21 2022-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2024004544A (ja) 2022-06-29 2024-01-17 東京エレクトロン株式会社 基板処理方法および基板処理装置

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JP2013100205A (ja) 2011-11-09 2013-05-23 Tokyo Electron Ltd 前処理方法、グラフェンの形成方法及びグラフェン製造装置
JP2014231455A (ja) 2013-05-29 2014-12-11 東京エレクトロン株式会社 グラフェンの生成方法
JP2016520032A (ja) 2013-05-08 2016-07-11 マックス−プランク−ゲゼルシャフト ツア フェーデルンク デア ヴィッセンシャフテン エー．ファオ． 電荷キャリア移動度が非常に高いグラフェン及びその製造方法
JP2017521339A (ja) 2014-05-05 2017-08-03 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 化学堆積による一貫したグラフェン成長のための基板前処理

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US7947544B2 (en) 2007-11-27 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device, film deposition method, and film deposition apparatus
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WO2011025045A1 (ja) * 2009-08-31 2011-03-03 独立行政法人科学技術振興機構 グラフェン薄膜とその製造方法
WO2015054138A1 (en) * 2013-10-10 2015-04-16 William Marsh Rice University Improved fatty acid productivity
KR101614322B1 (ko) * 2014-07-07 2016-04-21 재단법인 나노기반소프트일렉트로닉스연구단 층수가 제어된 그래핀의 제조방법 및 그를 이용한 전자소자의 제조방법
US9382118B2 (en) * 2014-11-11 2016-07-05 Hanwha Techwin Co., Ltd. Method of manufacturing graphene
KR102783987B1 (ko) * 2018-08-03 2025-03-21 삼성전자주식회사 나노결정질 그래핀의 형성방법 및 이를 포함하는 소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013100205A (ja) 2011-11-09 2013-05-23 Tokyo Electron Ltd 前処理方法、グラフェンの形成方法及びグラフェン製造装置
JP2016520032A (ja) 2013-05-08 2016-07-11 マックス−プランク−ゲゼルシャフト ツア フェーデルンク デア ヴィッセンシャフテン エー．ファオ． 電荷キャリア移動度が非常に高いグラフェン及びその製造方法
JP2014231455A (ja) 2013-05-29 2014-12-11 東京エレクトロン株式会社 グラフェンの生成方法
JP2017521339A (ja) 2014-05-05 2017-08-03 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 化学堆積による一貫したグラフェン成長のための基板前処理

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US12014907B2 (en) 2024-06-18
JP2020147839A (ja) 2020-09-17
KR102650973B1 (ko) 2024-03-26
US20220223407A1 (en) 2022-07-14
WO2020189202A1 (ja) 2020-09-24

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