JP7178935B2 - グラフェン構造体を形成する方法および装置 - Google Patents
グラフェン構造体を形成する方法および装置 Download PDFInfo
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- JP7178935B2 JP7178935B2 JP2019049093A JP2019049093A JP7178935B2 JP 7178935 B2 JP7178935 B2 JP 7178935B2 JP 2019049093 A JP2019049093 A JP 2019049093A JP 2019049093 A JP2019049093 A JP 2019049093A JP 7178935 B2 JP7178935 B2 JP 7178935B2
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Description
最初に、グラフェン構造体の形成方法の一実施形態について説明する。
上述した特許文献1,2では、結晶性の良好なグラフェンを、極力低い温度で効率よく成長させるため、下地としてNi等のグラフェンの成長を促進する触媒となる触媒金属膜を形成し、触媒金属層を、還元性ガスであるH2ガスと窒素含有ガスであるN2ガスのプラズマにより活性化した後、グラフェンをプラズマCVD(PE-CVD)により成長させている。
CxHy⇔C(graphene)+H2
したがって、H2ガスを添加することにより、グラフェンの核形成を制御することができる。
次に、上記実施形態に係るグラフェン構造体の形成方法の実施に好適な処理装置の例について説明する。
図5は、処理装置の第1の例を模式的に示す断面図である。図5に示す処理装置100は、例えばRLSA(登録商標)マイクロ波プラズマ方式のプラズマ処理装置として構成される。
ガス流量:Ar/H2=0~2000/10~2000sccm
圧力:0.1~10Torr(13.3~1333Pa)
ウエハ温度:300~600℃
時間:10~120min
ガス流量:
Arガス=0~1000sccm
C2H2ガス=0.1~100sccm
H2ガス=0~300sccm
圧力:1.33~133Pa(0.01~1Torr)
温度:300~1000℃(より好ましくは350~750℃)
時間:1~10min
ガス流量:
Arガス=0~2000sccm
C2H4ガス=0.1~300sccm
O2ガス=0~10sccm
H2ガス=0~500sccm
圧力:
ウエハ表面が絶縁体および半導体の場合
1.33~667Pa(0.01~5Torr)
ウエハ表面が金属の場合(触媒機能なし)
1.33~400Pa(0.01~3Torr)
温度:350~1000℃(より好ましくは400~800℃)
マイクロ波パワー:100~5000W(より好ましくは1000~3500W)
時間:1~200min
図6は、処理装置の第2の例を模式的に示す断面図、図7は図6の処理装置のマイクロ波導入装置の構成を示す構成図、図8は図6の処理装置におけるマイクロ波放射機構を模式的に示す断面図、図9は図6の処理装置における処理容器の天壁部を模式的に示す底面図である。
ガス流量:Ar/H2=0~2000/10~2000sccm
圧力:0.1~10Torr(13.3~1333Pa)
ウエハ温度:300~600℃
時間:10~120min
ガス流量:
Arガス=0~1000sccm
C2H2ガス=0.1~100sccm
H2ガス=0~300sccm
圧力:1.33~133Pa(0.01~1Torr)
温度:300~1000℃(より好ましくは350~750℃)
時間:1~10min
ガス流量:
Arガス=0~2000sccm
C2H4ガス=0.1~300sccm
O2ガス=0.1~10sccm
H2ガス=0~500sccm
圧力:
ウエハ表面が絶縁体および半導体の場合
1.33~667Pa(0.01~5Torr)
ウエハ表面が金属の場合(触媒機能なし)
1.33~400Pa(0.01~3Torr)
温度:350~1000℃(より好ましくは400~800℃)
マイクロ波パワー:トータルで100~5000W(より好ましくは
1000~3500W)
時間:1~200min
以下、実験例について説明する。
ここでは、被処理基板として、ベアSi基板を準備し、プラズマCVDによるグラフェン構造体の成膜に先立って行われる前処理の効果を確認した。第1の処理ガスとして、C2H2ガス、H2ガス、およびArガスを用い、流量をそれぞれ、1sccm、0.1sccm、50sccmとした。また、圧力:0.4Torr、基板温度:700℃とし、処理時間を0sec(処理なし)、180sec、600secと変化させた。
ここでは、被処理基板であるSi基板に対し、図5に示す第1の例の処理装置を用いて、表面処理および前処理を行った後、プラズマCVDによりグラフェン構造体を形成した。表面処理およびプラズマCVDは条件を固定して実施し、前処理の際の時間を変化させた。
・表面処理
Arガス:35sccm
H2ガス:2sccm
マイクロ波パワー:300W
時間:10min
・前処理
Arガス:50sccm
H2ガス:0.1sccm
C2H2ガス:1sccm
時間:10~600sec
・プラズマCVD
Arガス:50sccm
H2ガス:0.1sccm
C2H2ガス:1sccm
マイクロ波パワー:425W
時間:1.5min
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
2,102;載置台
3;マイクロ波導入機構
4,103;ガス供給機構
5;排気部
6,106;制御部
82,104;排気装置
100,200;処理装置
105;マイクロ波導入装置
300;被処理基板
301;半導体基体
302;絶縁膜
303;バリア膜
304;金属膜
310;核
320;グラフェン構造体
W;ウエハ
Claims (13)
- グラフェン構造体を形成する方法であって、
被処理基板を準備する工程と、
プラズマを用いずに前記被処理基板を加熱しつつ、炭素含有ガスを含む第1の処理ガスを前記被処理基板に供給して前処理を行う工程と、
前記前処理後の前記被処理基板の表面に、炭素含有ガスを含む第2の処理ガスのプラズマを用いたプラズマCVDにより前記被処理基板の表面にグラフェン構造体を形成する工程と、
を含み、
前記第1の処理ガスに含まれる炭素含有ガスは、炭化水素ガスである、方法。 - 前記前処理を行う工程は、処理時間が30sec以上である、請求項1に記載の方法。
- 前記前処理を行う工程は、処理時間が1~10minの範囲である、請求項2に記載の方法。
- 前記前処理を行う工程は、前記被処理基板を300~1000℃の範囲の温度で加熱しつつ行う、請求項1から請求項3のいずれか一項に記載の方法。
- 前記炭化水素ガスは、不飽和結合を有する、請求項1から請求項4のいずれか一項に記載の方法。
- 前記第1の処理ガスは、さらに水素ガスを含む、請求項1から請求項5のいずれか一項に記載の方法。
- 前記第1の処理ガスに含まれる炭素含有ガスと、前記第2の処理ガスに含まれる炭素含有ガスとは同じガスである、請求項1から請求項6のいずれか一項に記載の方法。
- 前記グラフェン構造体を形成する工程は、前記被処理基板の表面が触媒機能を有さない状態で前記グラフェン構造体を形成する、請求項1から請求項7のいずれか一項に記載の方法。
- 前記被処理基板は、その表面が絶縁体、半導体、または活性化処理されていない金属である、請求項8に記載の方法。
- 前記プラズマCVDは、リモートマイクロ波プラズマCVDである、請求項1から請求項9のいずれか一項に記載の方法。
- グラフェン構造体を形成する工程は、被処理基板の温度を350~1000℃、マイクロ波パワーを100~5000W、時間を1~200minの範囲として行われる、請求項10に記載の方法。
- 前記第2の処理ガスは、さらに水素ガスを含む、請求項1から請求項11のいずれか一項に記載の方法。
- グラフェン構造体を形成する装置であって、
被処理基板を収容する処理容器と、
前記被処理基板を加熱する加熱機構と、
前記処理容器の天壁を構成する誘電体材料からなるマイクロ波透過板を介して前記処理容器の上に配置された、スロットを有する平面スロットアンテナと、
マイクロ波を前記スロットおよび前記マイクロ波透過板を介して前記処理容器内に導入するマイクロ波導入機構と、
前記処理容器内に炭素含有ガスおよび酸化性ガスを含む処理ガスを供給するガス導入機構と、
前記処理容器内を排気する排気機構と、
前記加熱機構、前記マイクロ波導入機構、前記ガス導入機構、および前記排気機構を制御する制御部と
を有し、
前記制御部は、
被処理基板が前記処理容器に搬入された後、プラズマを用いずに前記被処理基板を加熱しつつ、炭素含有ガスを含む第1の処理ガスを前記被処理基板に供給して前処理を行う工程と、
前記前処理後の前記被処理基板の表面に、炭素含有ガスを含む第2の処理ガスのプラズマを用いたプラズマCVDにより前記被処理基板の表面にグラフェン構造体を形成する工程と、
が行われるように、前記加熱機構、前記マイクロ波導入機構、前記ガス導入機構、および前記排気機構を制御する、装置。
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