JP2014231455A - グラフェンの生成方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Abstract
Description
W ウエハ
10 プラズマCVD成膜装置
11 チャンバ
55 触媒金属層
56 活性化触媒金属層
57 グラフェン
58 コア
59 ドメイン
Claims (6)
- 低反応性の炭素含有ガスを基板に対向する空間で分解する第1の炭素含有ガス分解ステップと、
高反応性の炭素含有ガスを前記基板に対向する空間で分解する第2の炭素含有ガス分解ステップとを有することを特徴とするグラフェンの生成方法。 - 前記第1の炭素含有ガス分解ステップの前に、前記基板に形成された触媒金属層を活性化する触媒金属層活性化ステップを有することを特徴とする請求項1記載のグラフェンの生成方法。
- 前記第1の炭素含有ガス分解ステップにおいて、前記低反応性の炭素含有ガスをプラズマによって分解することを特徴とする請求項1又は2記載のグラフェンの生成方法。
- 前記第2の炭素含有ガス分解ステップにおいて、前記高反応性の炭素含有ガスを熱で分解することを特徴とする請求項1乃至3のいずれか1項に記載のグラフェンの生成方法。
- 前記低反応性の炭素含有ガスは、C2H4ガス(エチレンガス)、鎖式飽和炭化水素ガス(メタンガス、エタンガス、プロパンガス)、鎖式不飽和炭化水素(二重結合)ガス(プロピレンガス)、環式炭化水素ガス、芳香族炭化水素ガス、フェノール類のガス、アルコール類のガス、及びエーテル類のガスの少なくとも1つを含むことを特徴とする請求項1乃至4のいずれか1項に記載のグラフェンの生成方法。
- 前記高反応性の炭素含有ガスは、C2H2ガス(アセチレンガス)を少なくとも含むことを特徴とする請求項1乃至5のいずれか1項に記載のグラフェンの生成方法。
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JP2013112928A JP6002087B2 (ja) | 2013-05-29 | 2013-05-29 | グラフェンの生成方法 |
KR1020157033808A KR102220272B1 (ko) | 2013-05-29 | 2014-05-27 | 그래핀의 생성 방법 |
PCT/JP2014/064564 WO2014192956A1 (ja) | 2013-05-29 | 2014-05-27 | グラフェンの生成方法 |
US14/947,659 US9822009B2 (en) | 2013-05-29 | 2015-11-20 | Method for producing graphene |
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JP2013112928A JP6002087B2 (ja) | 2013-05-29 | 2013-05-29 | グラフェンの生成方法 |
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JP6002087B2 JP6002087B2 (ja) | 2016-10-05 |
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JP (1) | JP6002087B2 (ja) |
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JP2017519099A (ja) * | 2015-04-20 | 2017-07-13 | 中国科学院上海微系統与信息技術研究所 | 局所的炭素供給装置及び局所的炭素供給によるウェハーレベルのグラフェン単結晶製造方法 |
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KR20200135506A (ko) | 2018-03-30 | 2020-12-02 | 도쿄엘렉트론가부시키가이샤 | 그래핀 구조체를 형성하는 방법 및 장치 |
KR20210135596A (ko) | 2019-03-25 | 2021-11-15 | 도쿄엘렉트론가부시키가이샤 | 그래핀의 이상 성장을 검출하는 방법 및 장치 |
KR20210137174A (ko) | 2019-03-25 | 2021-11-17 | 도쿄엘렉트론가부시키가이샤 | 그래핀의 이상 성장을 검출하는 방법 및 측정 장치, 그리고 성막 시스템 |
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WO2014192956A1 (ja) | 2014-12-04 |
US20160075560A1 (en) | 2016-03-17 |
JP6002087B2 (ja) | 2016-10-05 |
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