JP2009187948A - 基板加熱装置 - Google Patents
基板加熱装置 Download PDFInfo
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- JP2009187948A JP2009187948A JP2009026481A JP2009026481A JP2009187948A JP 2009187948 A JP2009187948 A JP 2009187948A JP 2009026481 A JP2009026481 A JP 2009026481A JP 2009026481 A JP2009026481 A JP 2009026481A JP 2009187948 A JP2009187948 A JP 2009187948A
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- heating element
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- heating
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 174
- 239000000758 substrate Substances 0.000 claims description 73
- 230000002093 peripheral effect Effects 0.000 claims description 34
- 239000011888 foil Substances 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 16
- 239000000919 ceramic Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Resistance Heating (AREA)
- Drying Of Semiconductors (AREA)
- Surface Heating Bodies (AREA)
- Control Of Resistance Heating (AREA)
Abstract
【解決手段】基板が載置される上面12aを有する基体12と、上面12aを含む上部121に埋め込まれ上面121に略平行な平面形状を有する第1発熱体14と、上面12aを含む上部121に接合される下部122に埋め込まれ上面12aに直交する方向において、上面12aに対して第1発熱体14よりも下方に配設される平面型の第2発熱体16とを備え、第1発熱体14を基体12の上面12aに投影した第1投影パターン24と、第2発熱体16を上面12aに投影した第2投影パターン26とが重なる重複部を有する。上面12aの面積に対する第1投影パターン24と第2投影パターン26との面積の合計の占有率が85%以上であり、上面12aにおける第2投影パターン26の面積に対する重複部の面積の割合が5%以上である。
【選択図】図1
Description
上記のように、本発明の実施の形態を記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者にはさまざまな代替実施の形態、実施例及び運用技術が明らかとなろう。本発明はここでは記載していないさまざまな実施の形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係わる発明特定事項によってのみ定められるものである。
Claims (6)
- 被加熱物が載置される上面を有する基体と、
前記基体の前記上面を含む上部に埋め込まれ、前記上面に略平行な平面形状を有する第1発熱体と、
前記基体の前記上部に結合される下部に埋め込まれ、前記上面に直交する方向において、前記上面に対して前記第1発熱体よりも下方に配設される平面型の第2発熱体とを備え、
前記第1発熱体を前記基体の前記上面に投影した第1投影パターンと、前記第2発熱体を前記基体の前記上面に投影した第2投影パターンとが互いに部分的に重なる重複部を有し、
前記上面の面積に対する前記第1投影パターンと前記第2投影パターンの面積の合計の占有率が85%以上であり、
前記上面における前記第2投影パターンの面積に対する前記重複部の面積の割合が5%以上である基板加熱装置。 - 前記基体の材質が窒化アルミニウム、酸化アルミニウムのいずれかである請求項1に記載の基板加熱装置。
- 前記第1及び第2発熱体がモリブデン、ニオブ、タングステン、炭化タングステンのいずれかである請求項1に記載の基板加熱装置。
- 前記第1及び第2発熱体がメッシュ、スクリーン印刷体、箔を用いた発熱体である請求項1に記載の基板加熱装置。
- 円形状のシャフトを備え、
前記シャフトは、前記基体の下面に接合される請求項1に記載の基板加熱装置。 - 前記上面は、内周部と外周部とを有し、
前記外周部は、前記上面の半径の長さより約30%短い半径を有する同心円の外周と前記上面の外縁との間の領域であり、
前記外周部における前記重複率が20%以上30%以下であり、
前記内周部における前記重複率が20%以下である請求項1に記載の基板加熱装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2711408P | 2008-02-08 | 2008-02-08 | |
US61/027,114 | 2008-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009187948A true JP2009187948A (ja) | 2009-08-20 |
JP5426892B2 JP5426892B2 (ja) | 2014-02-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009026481A Active JP5426892B2 (ja) | 2008-02-08 | 2009-02-06 | 基板加熱装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8193473B2 (ja) |
JP (1) | JP5426892B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069641A (ja) * | 2011-09-26 | 2013-04-18 | Nihon Ceratec Co Ltd | セラミックスヒータ |
JP2013182745A (ja) * | 2012-02-29 | 2013-09-12 | Taiheiyo Cement Corp | セラミックスヒータ |
JP2014053574A (ja) * | 2012-09-10 | 2014-03-20 | Furukawa Co Ltd | 気相成長装置及び気相成長用加熱装置 |
JP2016189425A (ja) * | 2015-03-30 | 2016-11-04 | 日本特殊陶業株式会社 | セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法 |
JP2017017079A (ja) * | 2015-06-29 | 2017-01-19 | 京セラ株式会社 | 試料保持具およびこれを備えた試料処理装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8258437B2 (en) * | 2009-08-27 | 2012-09-04 | Whirlpool Corporation | Non-concentric surface heating element switch |
KR101868130B1 (ko) * | 2011-08-30 | 2018-06-18 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 열 어레이 시스템 |
US9538583B2 (en) * | 2013-01-16 | 2017-01-03 | Applied Materials, Inc. | Substrate support with switchable multizone heater |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6767833B2 (ja) * | 2016-09-29 | 2020-10-14 | 日本特殊陶業株式会社 | 加熱装置 |
JP6758143B2 (ja) * | 2016-09-29 | 2020-09-23 | 日本特殊陶業株式会社 | 加熱装置 |
WO2021054323A1 (ja) * | 2019-09-18 | 2021-03-25 | 日本碍子株式会社 | セラミックヒータ |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319315A (ja) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | 加熱装置 |
JPH03159092A (ja) * | 1989-11-16 | 1991-07-09 | Hanawa Netsuden Kinzoku Kk | 面状発熱体 |
JPH05326112A (ja) * | 1992-05-21 | 1993-12-10 | Shin Etsu Chem Co Ltd | 複層セラミックスヒーター |
JPH08274147A (ja) * | 1995-03-30 | 1996-10-18 | Kyocera Corp | ウェハ保持装置 |
JPH09270454A (ja) * | 1996-04-01 | 1997-10-14 | Kyocera Corp | ウエハ保持装置 |
JP2002050461A (ja) * | 2000-08-01 | 2002-02-15 | Sumitomo Osaka Cement Co Ltd | 基板加熱装置 |
JP2002124367A (ja) * | 2000-10-19 | 2002-04-26 | Ngk Insulators Ltd | セラミックヒーター |
JP2002373862A (ja) * | 2001-06-15 | 2002-12-26 | Ngk Spark Plug Co Ltd | セラミックヒータ |
JP2006500789A (ja) * | 2002-09-19 | 2006-01-05 | アプライド マテリアルズ インコーポレイテッド | マルチゾーン抵抗ヒータ |
JP2006339637A (ja) * | 2005-06-02 | 2006-12-14 | Ngk Insulators Ltd | 基板処理装置 |
JP2007066542A (ja) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | ヒータおよびウェハ加熱装置ならびにこのヒータの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204238A (ja) | 1998-01-08 | 1999-07-30 | Ngk Insulators Ltd | セラミックスヒーター |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
JP3293594B2 (ja) * | 1999-06-29 | 2002-06-17 | 住友電気工業株式会社 | 光ファイバ融着接続部の保護部材加熱装置及び加熱方法 |
JP4028149B2 (ja) * | 2000-02-03 | 2007-12-26 | 日本碍子株式会社 | 加熱装置 |
-
2009
- 2009-02-06 US US12/366,733 patent/US8193473B2/en active Active
- 2009-02-06 JP JP2009026481A patent/JP5426892B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319315A (ja) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | 加熱装置 |
JPH03159092A (ja) * | 1989-11-16 | 1991-07-09 | Hanawa Netsuden Kinzoku Kk | 面状発熱体 |
JPH05326112A (ja) * | 1992-05-21 | 1993-12-10 | Shin Etsu Chem Co Ltd | 複層セラミックスヒーター |
JPH08274147A (ja) * | 1995-03-30 | 1996-10-18 | Kyocera Corp | ウェハ保持装置 |
JPH09270454A (ja) * | 1996-04-01 | 1997-10-14 | Kyocera Corp | ウエハ保持装置 |
JP2002050461A (ja) * | 2000-08-01 | 2002-02-15 | Sumitomo Osaka Cement Co Ltd | 基板加熱装置 |
JP2002124367A (ja) * | 2000-10-19 | 2002-04-26 | Ngk Insulators Ltd | セラミックヒーター |
JP2002373862A (ja) * | 2001-06-15 | 2002-12-26 | Ngk Spark Plug Co Ltd | セラミックヒータ |
JP2006500789A (ja) * | 2002-09-19 | 2006-01-05 | アプライド マテリアルズ インコーポレイテッド | マルチゾーン抵抗ヒータ |
JP2006339637A (ja) * | 2005-06-02 | 2006-12-14 | Ngk Insulators Ltd | 基板処理装置 |
JP2007066542A (ja) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | ヒータおよびウェハ加熱装置ならびにこのヒータの製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069641A (ja) * | 2011-09-26 | 2013-04-18 | Nihon Ceratec Co Ltd | セラミックスヒータ |
JP2013182745A (ja) * | 2012-02-29 | 2013-09-12 | Taiheiyo Cement Corp | セラミックスヒータ |
JP2014053574A (ja) * | 2012-09-10 | 2014-03-20 | Furukawa Co Ltd | 気相成長装置及び気相成長用加熱装置 |
JP2016189425A (ja) * | 2015-03-30 | 2016-11-04 | 日本特殊陶業株式会社 | セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法 |
JP2017017079A (ja) * | 2015-06-29 | 2017-01-19 | 京セラ株式会社 | 試料保持具およびこれを備えた試料処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5426892B2 (ja) | 2014-02-26 |
US20090200289A1 (en) | 2009-08-13 |
US8193473B2 (en) | 2012-06-05 |
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