JP2009164289A5 - - Google Patents
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- Publication number
- JP2009164289A5 JP2009164289A5 JP2007340972A JP2007340972A JP2009164289A5 JP 2009164289 A5 JP2009164289 A5 JP 2009164289A5 JP 2007340972 A JP2007340972 A JP 2007340972A JP 2007340972 A JP2007340972 A JP 2007340972A JP 2009164289 A5 JP2009164289 A5 JP 2009164289A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- semiconductor
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 230000005533 two-dimensional electron gas Effects 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007340972A JP5470705B2 (ja) | 2007-12-28 | 2007-12-28 | 半導体装置及びその製造方法 |
| US12/244,927 US7838906B2 (en) | 2007-12-28 | 2008-10-03 | Semiconductor device and method of manufacturing the same |
| US12/760,293 US8143650B2 (en) | 2007-12-28 | 2010-04-14 | Semiconductor device having resistance layer formed on side surface of semiconductor layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007340972A JP5470705B2 (ja) | 2007-12-28 | 2007-12-28 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009164289A JP2009164289A (ja) | 2009-07-23 |
| JP2009164289A5 true JP2009164289A5 (https=) | 2010-05-20 |
| JP5470705B2 JP5470705B2 (ja) | 2014-04-16 |
Family
ID=40797032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007340972A Expired - Fee Related JP5470705B2 (ja) | 2007-12-28 | 2007-12-28 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7838906B2 (https=) |
| JP (1) | JP5470705B2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4290745B2 (ja) * | 2007-03-16 | 2009-07-08 | 豊田合成株式会社 | Ｉｉｉ−ｖ族半導体素子の製造方法 |
| US7999288B2 (en) * | 2007-11-26 | 2011-08-16 | International Rectifier Corporation | High voltage durability III-nitride semiconductor device |
| SG2014013809A (en) * | 2010-05-02 | 2014-04-28 | Visic Technologies Ltd | Field effect power transistors |
| US8816395B2 (en) | 2010-05-02 | 2014-08-26 | Visic Technologies Ltd. | Field effect power transistors |
| JP2014197565A (ja) * | 2011-07-29 | 2014-10-16 | パナソニック株式会社 | 半導体装置 |
| US9601638B2 (en) * | 2011-10-19 | 2017-03-21 | Nxp Usa, Inc. | GaN-on-Si switch devices |
| US10164038B2 (en) | 2013-01-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of implanting dopants into a group III-nitride structure and device formed |
| US9214423B2 (en) * | 2013-03-15 | 2015-12-15 | Semiconductor Components Industries, Llc | Method of forming a HEMT semiconductor device and structure therefor |
| WO2014171076A1 (ja) | 2013-04-17 | 2014-10-23 | パナソニックＩｐマネジメント株式会社 | 化合物半導体装置およびその製造方法ならびに樹脂封止型半導体装置 |
| KR20150065240A (ko) * | 2013-12-05 | 2015-06-15 | 서울반도체 주식회사 | 누설전류 억제 구조물을 구비하는 질화물계 트랜지스터 |
| JP6287143B2 (ja) * | 2013-12-06 | 2018-03-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US9711463B2 (en) | 2015-01-14 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for power transistors |
| US10283501B2 (en) * | 2016-03-03 | 2019-05-07 | Gan Systems Inc. | GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof |
| KR102044244B1 (ko) * | 2016-12-13 | 2019-12-02 | (주)웨이비스 | 질화물계 전자소자 및 그 제조방법 |
| US11018220B2 (en) * | 2017-04-19 | 2021-05-25 | Macom Technology Solutions Holdings, Inc. | Device isolation design rules for HAST improvement |
| EP3664126B1 (en) * | 2018-12-03 | 2022-09-14 | Infineon Technologies AG | Semiconductor device and method of fabricating a semiconductor device |
| EP3783663A1 (en) * | 2019-08-21 | 2021-02-24 | Infineon Technologies AG | Semiconductor device and method |
| JP7795215B2 (ja) * | 2021-12-09 | 2026-01-07 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| WO2023228899A1 (ja) * | 2022-05-27 | 2023-11-30 | ローム株式会社 | 窒化物半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH033936A (ja) | 1989-05-31 | 1991-01-10 | Fujitsu Ten Ltd | 内燃機関の燃料噴射量制御方式 |
| JPH05182991A (ja) * | 1991-11-07 | 1993-07-23 | Mitsubishi Electric Corp | ヘテロ接合ｆｅｔ及びその製造方法 |
| JP3956422B2 (ja) * | 1996-11-11 | 2007-08-08 | 住友化学株式会社 | ３−５族化合物半導体チップの製造方法 |
| JP4114248B2 (ja) * | 1998-10-09 | 2008-07-09 | 株式会社デンソー | 電界効果トランジスタの製造方法 |
| WO2005024955A1 (ja) * | 2003-09-05 | 2005-03-17 | Sanken Electric Co., Ltd. | 半導体装置 |
| US7476918B2 (en) * | 2004-11-22 | 2009-01-13 | Panasonic Corporation | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
| JP3128178U (ja) * | 2006-10-17 | 2006-12-28 | サンケン電気株式会社 | 化合物半導体素子 |
| US7859021B2 (en) * | 2007-08-29 | 2010-12-28 | Sanken Electric Co., Ltd. | Field-effect semiconductor device |
-
2007
- 2007-12-28 JP JP2007340972A patent/JP5470705B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-03 US US12/244,927 patent/US7838906B2/en not_active Expired - Fee Related
-
2010
- 2010-04-14 US US12/760,293 patent/US8143650B2/en not_active Expired - Fee Related
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