JP5470705B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP5470705B2
JP5470705B2 JP2007340972A JP2007340972A JP5470705B2 JP 5470705 B2 JP5470705 B2 JP 5470705B2 JP 2007340972 A JP2007340972 A JP 2007340972A JP 2007340972 A JP2007340972 A JP 2007340972A JP 5470705 B2 JP5470705 B2 JP 5470705B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor layer
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007340972A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009164289A (ja
JP2009164289A5 (https=
Inventor
憲 佐藤
信男 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2007340972A priority Critical patent/JP5470705B2/ja
Priority to US12/244,927 priority patent/US7838906B2/en
Publication of JP2009164289A publication Critical patent/JP2009164289A/ja
Priority to US12/760,293 priority patent/US8143650B2/en
Publication of JP2009164289A5 publication Critical patent/JP2009164289A5/ja
Application granted granted Critical
Publication of JP5470705B2 publication Critical patent/JP5470705B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007340972A 2007-12-28 2007-12-28 半導体装置及びその製造方法 Expired - Fee Related JP5470705B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007340972A JP5470705B2 (ja) 2007-12-28 2007-12-28 半導体装置及びその製造方法
US12/244,927 US7838906B2 (en) 2007-12-28 2008-10-03 Semiconductor device and method of manufacturing the same
US12/760,293 US8143650B2 (en) 2007-12-28 2010-04-14 Semiconductor device having resistance layer formed on side surface of semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007340972A JP5470705B2 (ja) 2007-12-28 2007-12-28 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009164289A JP2009164289A (ja) 2009-07-23
JP2009164289A5 JP2009164289A5 (https=) 2010-05-20
JP5470705B2 true JP5470705B2 (ja) 2014-04-16

Family

ID=40797032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007340972A Expired - Fee Related JP5470705B2 (ja) 2007-12-28 2007-12-28 半導体装置及びその製造方法

Country Status (2)

Country Link
US (2) US7838906B2 (https=)
JP (1) JP5470705B2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
US7999288B2 (en) * 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
SG2014013809A (en) * 2010-05-02 2014-04-28 Visic Technologies Ltd Field effect power transistors
US8816395B2 (en) 2010-05-02 2014-08-26 Visic Technologies Ltd. Field effect power transistors
JP2014197565A (ja) * 2011-07-29 2014-10-16 パナソニック株式会社 半導体装置
US9601638B2 (en) * 2011-10-19 2017-03-21 Nxp Usa, Inc. GaN-on-Si switch devices
US10164038B2 (en) 2013-01-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of implanting dopants into a group III-nitride structure and device formed
US9214423B2 (en) * 2013-03-15 2015-12-15 Semiconductor Components Industries, Llc Method of forming a HEMT semiconductor device and structure therefor
WO2014171076A1 (ja) 2013-04-17 2014-10-23 パナソニックＩｐマネジメント株式会社 化合物半導体装置およびその製造方法ならびに樹脂封止型半導体装置
KR20150065240A (ko) * 2013-12-05 2015-06-15 서울반도체 주식회사 누설전류 억제 구조물을 구비하는 질화물계 트랜지스터
JP6287143B2 (ja) * 2013-12-06 2018-03-07 株式会社デンソー 半導体装置およびその製造方法
US9711463B2 (en) 2015-01-14 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Dicing method for power transistors
US10283501B2 (en) * 2016-03-03 2019-05-07 Gan Systems Inc. GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
KR102044244B1 (ko) * 2016-12-13 2019-12-02 (주)웨이비스 질화물계 전자소자 및 그 제조방법
US11018220B2 (en) * 2017-04-19 2021-05-25 Macom Technology Solutions Holdings, Inc. Device isolation design rules for HAST improvement
EP3664126B1 (en) * 2018-12-03 2022-09-14 Infineon Technologies AG Semiconductor device and method of fabricating a semiconductor device
EP3783663A1 (en) * 2019-08-21 2021-02-24 Infineon Technologies AG Semiconductor device and method
JP7795215B2 (ja) * 2021-12-09 2026-01-07 国立研究開発法人産業技術総合研究所 半導体装置
WO2023228899A1 (ja) * 2022-05-27 2023-11-30 ローム株式会社 窒化物半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033936A (ja) 1989-05-31 1991-01-10 Fujitsu Ten Ltd 内燃機関の燃料噴射量制御方式
JPH05182991A (ja) * 1991-11-07 1993-07-23 Mitsubishi Electric Corp ヘテロ接合ｆｅｔ及びその製造方法
JP3956422B2 (ja) * 1996-11-11 2007-08-08 住友化学株式会社 ３−５族化合物半導体チップの製造方法
JP4114248B2 (ja) * 1998-10-09 2008-07-09 株式会社デンソー 電界効果トランジスタの製造方法
WO2005024955A1 (ja) * 2003-09-05 2005-03-17 Sanken Electric Co., Ltd. 半導体装置
US7476918B2 (en) * 2004-11-22 2009-01-13 Panasonic Corporation Semiconductor integrated circuit device and vehicle-mounted radar system using the same
JP3128178U (ja) * 2006-10-17 2006-12-28 サンケン電気株式会社 化合物半導体素子
US7859021B2 (en) * 2007-08-29 2010-12-28 Sanken Electric Co., Ltd. Field-effect semiconductor device

Also Published As

Publication number Publication date
JP2009164289A (ja) 2009-07-23
US20090166678A1 (en) 2009-07-02
US20100193842A1 (en) 2010-08-05
US7838906B2 (en) 2010-11-23
US8143650B2 (en) 2012-03-27

Similar Documents

Publication Publication Date Title
JP5470705B2 (ja) 半導体装置及びその製造方法
JP5564815B2 (ja) 半導体装置及び半導体装置の製造方法
JP4737471B2 (ja) 半導体装置およびその製造方法
JP5348364B2 (ja) ヘテロ接合型電界効果半導体装置
TWI464873B (zh) Compound semiconductor device
US9768257B2 (en) Semiconductor device
JP5487615B2 (ja) 電界効果半導体装置及びその製造方法
JP4985760B2 (ja) 半導体装置およびその製造方法
WO2012160757A1 (ja) ショットキーダイオード
JP2011155221A (ja) 半導体装置およびその製造方法
JP6272557B2 (ja) 窒化物半導体電界効果トランジスタ
JP2009267155A (ja) 半導体装置
JP5548906B2 (ja) 窒化物系半導体装置
JP5299208B2 (ja) 半導体装置およびその製造方法
US11315951B2 (en) Semiconductor device and method of fabricating the same
JP5261923B2 (ja) 化合物半導体素子
TW201635522A (zh) 半導體單元
US20160211225A1 (en) Semiconductor device and manufacturing method thereof
KR102099437B1 (ko) 전력 반도체 소자
KR102066617B1 (ko) 전력 반도체 소자
JP2015119028A (ja) 半導体装置、電界効果トランジスタ、およびダイオード
JP2016213388A (ja) 窒化物半導体装置及びその製造方法
KR102864676B1 (ko) 이종접합 전계효과 트랜지스터 및 그 제조 방법
JP3128178U (ja) 化合物半導体素子
JP2012138635A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100407

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130426

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130813

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131004

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140120

R150 Certificate of patent or registration of utility model

Ref document number: 5470705

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees