JP2009111342A5 - - Google Patents

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Publication number
JP2009111342A5
JP2009111342A5 JP2008196779A JP2008196779A JP2009111342A5 JP 2009111342 A5 JP2009111342 A5 JP 2009111342A5 JP 2008196779 A JP2008196779 A JP 2008196779A JP 2008196779 A JP2008196779 A JP 2008196779A JP 2009111342 A5 JP2009111342 A5 JP 2009111342A5
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JP
Japan
Prior art keywords
layer
emitting diode
refractive index
light emitting
diode according
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JP2008196779A
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English (en)
Japanese (ja)
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JP2009111342A (ja
JP5259292B2 (ja
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Priority claimed from KR1020070108686A external-priority patent/KR101393353B1/ko
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Publication of JP2009111342A publication Critical patent/JP2009111342A/ja
Publication of JP2009111342A5 publication Critical patent/JP2009111342A5/ja
Application granted granted Critical
Publication of JP5259292B2 publication Critical patent/JP5259292B2/ja
Active legal-status Critical Current
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JP2008196779A 2007-10-29 2008-07-30 発光ダイオード Active JP5259292B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0108686 2007-10-29
KR1020070108686A KR101393353B1 (ko) 2007-10-29 2007-10-29 발광다이오드

Publications (3)

Publication Number Publication Date
JP2009111342A JP2009111342A (ja) 2009-05-21
JP2009111342A5 true JP2009111342A5 (https=) 2011-09-15
JP5259292B2 JP5259292B2 (ja) 2013-08-07

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ID=40581658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008196779A Active JP5259292B2 (ja) 2007-10-29 2008-07-30 発光ダイオード

Country Status (3)

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US (2) US7863599B2 (https=)
JP (1) JP5259292B2 (https=)
KR (1) KR101393353B1 (https=)

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CN102903800B (zh) * 2011-07-28 2015-01-14 上海博恩世通光电股份有限公司 N型导电导热超晶格dbr垂直式蓝光led芯片及其制作方法
CN102903801B (zh) * 2011-07-28 2015-06-10 上海博恩世通光电股份有限公司 具有粘附性电流阻挡层的led芯片及其制作方法
KR101872735B1 (ko) * 2011-11-15 2018-08-02 엘지이노텍 주식회사 발광소자 패키지
CN103249250A (zh) * 2012-02-08 2013-08-14 欧司朗股份有限公司 电路板及其制造方法和包括该电路板的照明装置
CN103325905B (zh) * 2012-03-20 2016-01-06 山东浪潮华光光电子股份有限公司 一种具有电流阻挡结构的GaN基发光二极管芯片及其制作方法
CN102646772A (zh) * 2012-05-11 2012-08-22 东南大学 一种具有背镀结构的发光二极管
CN102709421B (zh) * 2012-06-21 2014-11-05 安徽三安光电有限公司 一种具有双反射层的氮化镓基发光二极管
CN102709420B (zh) * 2012-06-21 2014-07-30 安徽三安光电有限公司 一种氮化镓基发光二极管
CN102810609B (zh) * 2012-08-16 2015-01-21 厦门市三安光电科技有限公司 一种紫外半导体发光器件及其制造方法
TWI610416B (zh) * 2013-02-15 2018-01-01 首爾偉傲世有限公司 抗靜電放電的ｌｅｄ晶片以及包含該ｌｅｄ晶片的ｌｅｄ封裝
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CN103700742B (zh) * 2013-12-18 2016-09-07 同辉电子科技股份有限公司 具有高反射率电极的发光二极管及其制作方法
US9419185B2 (en) 2014-01-27 2016-08-16 Glo Ab Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
CN104091874B (zh) * 2014-07-01 2017-01-18 天津三安光电有限公司 发光二极管
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