JP2009105390A5 - - Google Patents

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Publication number
JP2009105390A5
JP2009105390A5 JP2008251237A JP2008251237A JP2009105390A5 JP 2009105390 A5 JP2009105390 A5 JP 2009105390A5 JP 2008251237 A JP2008251237 A JP 2008251237A JP 2008251237 A JP2008251237 A JP 2008251237A JP 2009105390 A5 JP2009105390 A5 JP 2009105390A5
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JP
Japan
Prior art keywords
semiconductor layer
amorphous semiconductor
type amorphous
type
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008251237A
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English (en)
Japanese (ja)
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JP2009105390A (ja
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Priority to JP2008251237A priority Critical patent/JP2009105390A/ja
Priority claimed from JP2008251237A external-priority patent/JP2009105390A/ja
Publication of JP2009105390A publication Critical patent/JP2009105390A/ja
Publication of JP2009105390A5 publication Critical patent/JP2009105390A5/ja
Withdrawn legal-status Critical Current

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JP2008251237A 2007-10-05 2008-09-29 半導体装置およびその作製方法 Withdrawn JP2009105390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008251237A JP2009105390A (ja) 2007-10-05 2008-09-29 半導体装置およびその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007262603 2007-10-05
JP2008251237A JP2009105390A (ja) 2007-10-05 2008-09-29 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014152565A Division JP2014212346A (ja) 2007-10-05 2014-07-28 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009105390A JP2009105390A (ja) 2009-05-14
JP2009105390A5 true JP2009105390A5 (https=) 2011-08-18

Family

ID=40522484

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008251237A Withdrawn JP2009105390A (ja) 2007-10-05 2008-09-29 半導体装置およびその作製方法
JP2014152565A Withdrawn JP2014212346A (ja) 2007-10-05 2014-07-28 半導体装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014152565A Withdrawn JP2014212346A (ja) 2007-10-05 2014-07-28 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8183102B2 (https=)
JP (2) JP2009105390A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
CN103972246B (zh) * 2009-07-27 2017-05-31 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
KR102295450B1 (ko) 2009-10-09 2021-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2486596A4 (en) 2009-10-09 2013-08-28 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
KR102220606B1 (ko) * 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN103400857B (zh) 2009-11-27 2016-12-28 株式会社半导体能源研究所 半导体装置和及其制造方法
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9882058B2 (en) * 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105116653B (zh) * 2015-09-14 2019-02-15 深超光电（深圳）有限公司 显示面板

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JP5352041B2 (ja) * 2004-08-27 2013-11-27 株式会社半導体エネルギー研究所 表示装置を実装した電子機器の作製方法
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KR101152528B1 (ko) * 2005-06-27 2012-06-01 엘지디스플레이 주식회사 누설전류를 줄일 수 있는 액정표시소자 및 그 제조방법
KR101158896B1 (ko) * 2005-10-28 2012-06-25 삼성전자주식회사 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널
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US8344378B2 (en) * 2009-06-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same

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