JP2009105390A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP2009105390A
JP2009105390A JP2008251237A JP2008251237A JP2009105390A JP 2009105390 A JP2009105390 A JP 2009105390A JP 2008251237 A JP2008251237 A JP 2008251237A JP 2008251237 A JP2008251237 A JP 2008251237A JP 2009105390 A JP2009105390 A JP 2009105390A
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semiconductor layer
layer
film
amorphous semiconductor
type amorphous
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JP2008251237A
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Japanese (ja)
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JP2009105390A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Yoshimoto Kurokawa
義元 黒川
Daisuke Kawae
大輔 河江
Satoshi Kobayashi
聡 小林
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008251237A priority Critical patent/JP2009105390A/ja
Publication of JP2009105390A publication Critical patent/JP2009105390A/ja
Publication of JP2009105390A5 publication Critical patent/JP2009105390A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008251237A 2007-10-05 2008-09-29 半導体装置およびその作製方法 Withdrawn JP2009105390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008251237A JP2009105390A (ja) 2007-10-05 2008-09-29 半導体装置およびその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007262603 2007-10-05
JP2008251237A JP2009105390A (ja) 2007-10-05 2008-09-29 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014152565A Division JP2014212346A (ja) 2007-10-05 2014-07-28 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009105390A true JP2009105390A (ja) 2009-05-14
JP2009105390A5 JP2009105390A5 (https=) 2011-08-18

Family

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JP2014152565A Withdrawn JP2014212346A (ja) 2007-10-05 2014-07-28 半導体装置の作製方法

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Country Status (2)

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US (1) US8183102B2 (https=)
JP (2) JP2009105390A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101771268B1 (ko) 2009-10-09 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US9865742B2 (en) 2009-10-09 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2019033288A (ja) * 2009-11-27 2019-02-28 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
CN103972246B (zh) * 2009-07-27 2017-05-31 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
KR102220606B1 (ko) * 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9882058B2 (en) * 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105116653B (zh) * 2015-09-14 2019-02-15 深超光电（深圳）有限公司 显示面板

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JPH04196132A (ja) * 1990-11-26 1992-07-15 Seiko Epson Corp 表示装置の製造方法
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JP2007011351A (ja) * 2005-06-27 2007-01-18 Lg Phillips Lcd Co Ltd 漏洩電流を減少させる液晶表示素子及びその製造方法

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KR100671824B1 (ko) * 2005-12-14 2007-01-19 진 장 역 스태거드 박막 트랜지스터 제조 방법
TW200915573A (en) * 2007-09-29 2009-04-01 Chunghwa Picture Tubes Ltd Thin film transistor, pixel structure and fabricating methods thereof
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JPH01125867A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 薄膜トランジスタ製造方法
JPH04196132A (ja) * 1990-11-26 1992-07-15 Seiko Epson Corp 表示装置の製造方法
JPH11177094A (ja) * 1997-12-08 1999-07-02 Advanced Display Inc 半導体薄膜トランジスタおよび該半導体薄膜トランジスタを含む半導体薄膜トランジスタアレイ基板
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JP2007011351A (ja) * 2005-06-27 2007-01-18 Lg Phillips Lcd Co Ltd 漏洩電流を減少させる液晶表示素子及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101771268B1 (ko) 2009-10-09 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US9865742B2 (en) 2009-10-09 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10290742B2 (en) 2009-10-09 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
JP2019033288A (ja) * 2009-11-27 2019-02-28 株式会社半導体エネルギー研究所 半導体装置
JP2019036752A (ja) * 2009-11-27 2019-03-07 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20190109259A1 (en) 2009-11-27 2019-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10396236B2 (en) 2009-11-27 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP2020014015A (ja) * 2009-11-27 2020-01-23 株式会社半導体エネルギー研究所 半導体装置
US11894486B2 (en) 2009-11-27 2024-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12396292B2 (en) 2009-11-27 2025-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first and second conductive layers

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Publication number Publication date
US8183102B2 (en) 2012-05-22
US20090090909A1 (en) 2009-04-09
JP2014212346A (ja) 2014-11-13

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