JP2009099944A5 - - Google Patents

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Publication number
JP2009099944A5
JP2009099944A5 JP2008196038A JP2008196038A JP2009099944A5 JP 2009099944 A5 JP2009099944 A5 JP 2009099944A5 JP 2008196038 A JP2008196038 A JP 2008196038A JP 2008196038 A JP2008196038 A JP 2008196038A JP 2009099944 A5 JP2009099944 A5 JP 2009099944A5
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JP
Japan
Prior art keywords
thin film
film transistor
semiconductor layer
layer
forming
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JP2008196038A
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English (en)
Japanese (ja)
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JP2009099944A (ja
JP4759598B2 (ja
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Priority claimed from JP2008196038A external-priority patent/JP4759598B2/ja
Priority to JP2008196038A priority Critical patent/JP4759598B2/ja
Priority to CN2008801082923A priority patent/CN101809747B/zh
Priority to PCT/JP2008/067363 priority patent/WO2009041544A1/en
Priority to US12/672,103 priority patent/US8563977B2/en
Priority to EP08833155A priority patent/EP2195848B1/en
Priority to KR1020107008596A priority patent/KR101148718B1/ko
Priority to TW097136880A priority patent/TWI377683B/zh
Publication of JP2009099944A publication Critical patent/JP2009099944A/ja
Publication of JP2009099944A5 publication Critical patent/JP2009099944A5/ja
Publication of JP4759598B2 publication Critical patent/JP4759598B2/ja
Application granted granted Critical
Priority to US13/369,406 priority patent/US20120132911A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008196038A 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Expired - Fee Related JP4759598B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
CN2008801082923A CN101809747B (zh) 2007-09-28 2008-09-18 薄膜晶体管、其制造方法和使用薄膜晶体管的显示装置
PCT/JP2008/067363 WO2009041544A1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US12/672,103 US8563977B2 (en) 2007-09-28 2008-09-18 Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
EP08833155A EP2195848B1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
KR1020107008596A KR101148718B1 (ko) 2007-09-28 2008-09-18 박막 트랜지스터, 그 제조 방법 및 그것을 사용한 표시 장치
TW097136880A TWI377683B (en) 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US13/369,406 US20120132911A1 (en) 2007-09-28 2012-02-09 Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007254364 2007-09-28
JP2007254364 2007-09-28
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Related Child Applications (1)

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JP2011031543A Division JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Publications (3)

Publication Number Publication Date
JP2009099944A JP2009099944A (ja) 2009-05-07
JP2009099944A5 true JP2009099944A5 (enExample) 2011-01-13
JP4759598B2 JP4759598B2 (ja) 2011-08-31

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JP2008196038A Expired - Fee Related JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

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Country Status (7)

Country Link
US (2) US8563977B2 (enExample)
EP (1) EP2195848B1 (enExample)
JP (2) JP4759598B2 (enExample)
KR (1) KR101148718B1 (enExample)
CN (1) CN101809747B (enExample)
TW (1) TWI377683B (enExample)
WO (1) WO2009041544A1 (enExample)

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US8853683B2 (en) 2009-12-17 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
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CN102598284B (zh) * 2009-11-06 2015-04-15 株式会社半导体能源研究所 半导体器件
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JP4759598B2 (ja) 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
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US8853683B2 (en) 2009-12-17 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity

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