JP2009060303A - 増幅回路 - Google Patents
増幅回路 Download PDFInfo
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- JP2009060303A JP2009060303A JP2007224886A JP2007224886A JP2009060303A JP 2009060303 A JP2009060303 A JP 2009060303A JP 2007224886 A JP2007224886 A JP 2007224886A JP 2007224886 A JP2007224886 A JP 2007224886A JP 2009060303 A JP2009060303 A JP 2009060303A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3022—CMOS common source output SEPP amplifiers
- H03F3/3028—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage
- H03F3/303—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage using opamps as driving stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3033—NMOS SEPP output stages
- H03F3/3035—NMOS SEPP output stages using differential amplifiers as phase-splitting elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3055—Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel
- H03F3/3059—Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel with symmetrical driving of the end stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
【解決手段】アンプ26は差動入力VINの正の期間に対応して、出力段回路24のプッシュプル回路を構成する一方のトランジスタTr1をAB級動作させる。トランジスタTr3は、アンプ26の出力に基づき、VINの正期間に対応してオンし、プッシュプル回路を構成する他方のトランジスタTr2のゲートを接地させ、Tr2をカットオフ状態とする。同様に、アンプ28は差動入力VINの負期間に対応してTr2をAB級動作させると共に、トランジスタTr4をオンさせてTr1のゲートを接地させ、Tr1をカットオフ状態とする。
【選択図】図1
Description
VAMP1=vBIAS+gF・VIN
を出力し、それ以外の期間にて、
VAMP1=vBIAS
を出力する。一方、アンプ28は、VIN<0である負信号期間P−にて、
VAMP2=vBIAS+gF1・(−VIN)
を出力し、それ以外の期間にて、
VAMP2=vBIAS
を出力する。vBIASは例えば、pn接合電位差に応じた約0.7V程度に設定することができる。
Claims (3)
- 第1制御信号に基づいて導通電流を制御される第1出力トランジスタ及び第2制御信号に基づいて導通電流を制御される第2出力トランジスタを備え、これら両出力トランジスタによりAB級プッシュプル回路として動作する出力段回路と、
入力信号に応じて、前記第1制御信号及び前記第2制御信号を生成する前段回路と、
を有し、
前記第1制御信号は、前記入力信号が正である正信号期間に対応して設定される第1オン期間にて、前記第1出力トランジスタをAB級動作させ、かつ前記入力信号が負である負信号期間に対応して設定される第1オフ期間にて、前記第1出力トランジスタをカットオフ状態とし、
前記第2制御信号は、前記負信号期間に対応して設定される第2オン期間にて、前記第2出力トランジスタをAB級動作させ、かつ前記正信号期間に対応して設定される第2オフ期間にて、前記第2出力トランジスタをカットオフ状態とすること、
を特徴とする増幅回路。 - 請求項1に記載の増幅回路において、
前記前段回路は、
前記第1出力トランジスタをAB級動作させる第1の制御原信号を、前記入力信号に基づいて生成し、前記第1出力トランジスタに制御信号として印加可能な第1制御回路と、
前記第2出力トランジスタをAB級動作させる第2の制御原信号を、前記入力信号に基づいて生成し、前記第2出力トランジスタに制御信号として印加可能な第2制御回路と、
前記第1の制御原信号に基づいて前記第2オフ期間にて動作し、前記第2出力トランジスタに印加される制御信号を、カットオフ電圧とする第2出力トランジスタカットオフ回路と、
前記第2の制御原信号に基づいて前記第1オフ期間にて動作し、前記第1出力トランジスタに印加される制御信号を、カットオフ電圧とする第1出力トランジスタカットオフ回路と、
を有することを特徴とする増幅回路。 - 請求項1又は請求項2に記載の増幅回路において、
前記出力段回路の出力端子に当該出力段回路と並列に設けられたプッシュプル回路である補助出力段回路と、
前記入力信号に応じて、前記補助出力段回路をAB級プッシュプル回路として動作させ、前記出力段回路と同相の出力信号を前記出力端子へ出力させる補助前段回路と、
を有し、
前記補助出力段回路は、前記出力段回路よりも小さな負荷駆動能力を有すること、
を特徴とする増幅回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007224886A JP5028189B2 (ja) | 2007-08-30 | 2007-08-30 | 増幅回路 |
KR1020080081952A KR101038168B1 (ko) | 2007-08-30 | 2008-08-21 | 증폭 회로 |
US12/230,065 US7755428B2 (en) | 2007-08-30 | 2008-08-22 | Amplifying circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007224886A JP5028189B2 (ja) | 2007-08-30 | 2007-08-30 | 増幅回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009060303A true JP2009060303A (ja) | 2009-03-19 |
JP5028189B2 JP5028189B2 (ja) | 2012-09-19 |
Family
ID=40406504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007224886A Expired - Fee Related JP5028189B2 (ja) | 2007-08-30 | 2007-08-30 | 増幅回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7755428B2 (ja) |
JP (1) | JP5028189B2 (ja) |
KR (1) | KR101038168B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014212485A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社エヌエフ回路設計ブロック | 増幅回路 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201115908A (en) * | 2009-10-27 | 2011-05-01 | Mediatek Singapore Pte Ltd | Driving amplifier circuit |
US8098097B2 (en) * | 2009-12-23 | 2012-01-17 | Honeywell International Inc. | Radio frequency buffer |
GB2481069B (en) * | 2010-06-11 | 2017-06-07 | Snaptrack Inc | Improved crossover performance of power amplifier |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04250708A (ja) * | 1991-01-25 | 1992-09-07 | Nec Corp | 出力回路 |
JP2002237730A (ja) * | 2001-02-09 | 2002-08-23 | Nec Corp | 電力増幅回路 |
JP2003264436A (ja) * | 2002-03-12 | 2003-09-19 | Onkyo Corp | パルス増幅装置 |
JP2003298366A (ja) * | 2002-03-29 | 2003-10-17 | Toshiba Microelectronics Corp | 増幅器 |
JP2004357022A (ja) * | 2003-05-29 | 2004-12-16 | Mitsumi Electric Co Ltd | 駆動回路 |
JP2007151124A (ja) * | 2002-09-30 | 2007-06-14 | Toshiba Corp | 増幅回路及びこれを用いた液晶ディスプレイ装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04129410A (ja) * | 1990-09-20 | 1992-04-30 | Fujitsu Ltd | Cmosオペアンプ回路 |
US5673000A (en) * | 1996-01-05 | 1997-09-30 | Rockford Corporation | Dynamically invariant AB linear operation amplifier |
US5856760A (en) * | 1996-11-07 | 1999-01-05 | Raytheon Company | Overdrive protection clamp scheme for feedback amplifiers |
JP3871200B2 (ja) * | 2001-05-30 | 2007-01-24 | 株式会社ルネサステクノロジ | 磁気ディスク記憶装置 |
US7012465B2 (en) * | 2001-08-07 | 2006-03-14 | Qualcomm Incorporated | Low-voltage class-AB output stage amplifier |
JP2003115729A (ja) | 2001-10-02 | 2003-04-18 | Seiko Epson Corp | Ab級アンプ |
US7225501B2 (en) * | 2003-09-17 | 2007-06-05 | The Hoover Company | Brush assembly for a cleaning device |
KR101098442B1 (ko) * | 2004-09-09 | 2011-12-26 | 매그나칩 반도체 유한회사 | 슬루율 자동보정 ab급 증폭기 |
US7498876B2 (en) * | 2005-06-20 | 2009-03-03 | Agere Systems Inc. | Amplifier having half-wave tracking power rails |
TWI291806B (en) * | 2005-12-19 | 2007-12-21 | Denmos Technology Inc | Buffer for source driver |
US7551030B2 (en) * | 2007-02-08 | 2009-06-23 | Samsung Electronics Co., Ltd. | Two-stage operational amplifier with class AB output stage |
-
2007
- 2007-08-30 JP JP2007224886A patent/JP5028189B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-21 KR KR1020080081952A patent/KR101038168B1/ko not_active IP Right Cessation
- 2008-08-22 US US12/230,065 patent/US7755428B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04250708A (ja) * | 1991-01-25 | 1992-09-07 | Nec Corp | 出力回路 |
JP2002237730A (ja) * | 2001-02-09 | 2002-08-23 | Nec Corp | 電力増幅回路 |
JP2003264436A (ja) * | 2002-03-12 | 2003-09-19 | Onkyo Corp | パルス増幅装置 |
JP2003298366A (ja) * | 2002-03-29 | 2003-10-17 | Toshiba Microelectronics Corp | 増幅器 |
JP2007151124A (ja) * | 2002-09-30 | 2007-06-14 | Toshiba Corp | 増幅回路及びこれを用いた液晶ディスプレイ装置 |
JP2004357022A (ja) * | 2003-05-29 | 2004-12-16 | Mitsumi Electric Co Ltd | 駆動回路 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014212485A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社エヌエフ回路設計ブロック | 増幅回路 |
Also Published As
Publication number | Publication date |
---|---|
US7755428B2 (en) | 2010-07-13 |
KR20090023134A (ko) | 2009-03-04 |
US20090058523A1 (en) | 2009-03-05 |
KR101038168B1 (ko) | 2011-05-31 |
JP5028189B2 (ja) | 2012-09-19 |
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