JP2009049385A5 - - Google Patents
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- Publication number
- JP2009049385A5 JP2009049385A5 JP2008182189A JP2008182189A JP2009049385A5 JP 2009049385 A5 JP2009049385 A5 JP 2009049385A5 JP 2008182189 A JP2008182189 A JP 2008182189A JP 2008182189 A JP2008182189 A JP 2008182189A JP 2009049385 A5 JP2009049385 A5 JP 2009049385A5
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- crystal display
- electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004973 liquid crystal related substance Substances 0.000 claims 9
- 239000010410 layer Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000011241 protective layer Substances 0.000 claims 3
- 125000006850 spacer group Chemical group 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008182189A JP2009049385A (ja) | 2007-07-20 | 2008-07-14 | 液晶表示装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007190219 | 2007-07-20 | ||
| JP2008182189A JP2009049385A (ja) | 2007-07-20 | 2008-07-14 | 液晶表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014076852A Division JP2014149545A (ja) | 2007-07-20 | 2014-04-03 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009049385A JP2009049385A (ja) | 2009-03-05 |
| JP2009049385A5 true JP2009049385A5 (enExample) | 2011-08-18 |
Family
ID=40264554
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008182189A Withdrawn JP2009049385A (ja) | 2007-07-20 | 2008-07-14 | 液晶表示装置 |
| JP2014076852A Withdrawn JP2014149545A (ja) | 2007-07-20 | 2014-04-03 | 液晶表示装置 |
| JP2015193564A Expired - Fee Related JP6117884B2 (ja) | 2007-07-20 | 2015-09-30 | 液晶表示装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014076852A Withdrawn JP2014149545A (ja) | 2007-07-20 | 2014-04-03 | 液晶表示装置 |
| JP2015193564A Expired - Fee Related JP6117884B2 (ja) | 2007-07-20 | 2015-09-30 | 液晶表示装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7940345B2 (enExample) |
| JP (3) | JP2009049385A (enExample) |
| KR (1) | KR101581171B1 (enExample) |
| CN (4) | CN103066113B (enExample) |
| TW (3) | TWI521292B (enExample) |
Families Citing this family (53)
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| US9176353B2 (en) * | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8921858B2 (en) * | 2007-06-29 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI521292B (zh) * | 2007-07-20 | 2016-02-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8330887B2 (en) * | 2007-07-27 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US8101444B2 (en) | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101484297B1 (ko) * | 2007-08-31 | 2015-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 표시장치의 제작방법 |
| JP5395384B2 (ja) * | 2007-09-07 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| TWI521712B (zh) * | 2007-12-03 | 2016-02-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法 |
| KR102426826B1 (ko) * | 2008-09-19 | 2022-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20100067612A (ko) * | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
| KR101667622B1 (ko) * | 2008-12-11 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
| TWI549198B (zh) | 2008-12-26 | 2016-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8704216B2 (en) | 2009-02-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101650917B1 (ko) * | 2009-03-09 | 2016-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
| JP5558916B2 (ja) * | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
| US8344378B2 (en) * | 2009-06-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| WO2011007675A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN110824800B (zh) * | 2009-10-16 | 2022-07-26 | 株式会社半导体能源研究所 | 显示设备 |
| WO2011048925A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101678687B1 (ko) * | 2009-12-11 | 2016-11-23 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판의 제조방법 |
| JP5752447B2 (ja) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5752446B2 (ja) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| BR112013015761A2 (pt) * | 2010-12-27 | 2018-11-06 | Sharp Kk | dispositivo semicondutor e método para fabricar o mesmo |
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| US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
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| TWI584383B (zh) * | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN102629611B (zh) * | 2012-03-29 | 2015-01-21 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
| KR20150007000A (ko) | 2013-07-10 | 2015-01-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법 |
| KR102192592B1 (ko) | 2013-07-22 | 2020-12-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6206104B2 (ja) * | 2013-11-11 | 2017-10-04 | セイコーエプソン株式会社 | 信号処理回路、回路基板、及び、プロジェクター |
| CN103760721A (zh) * | 2014-01-08 | 2014-04-30 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板及其制备方法、显示装置 |
| CN103995381A (zh) * | 2014-04-17 | 2014-08-20 | 上海天马微电子有限公司 | 一种像素结构、液晶面板及其工艺方法 |
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| TWI624874B (zh) | 2014-12-03 | 2018-05-21 | 鴻海精密工業股份有限公司 | 一種垂直型電晶體及其製作方法 |
| KR20170087568A (ko) * | 2016-01-20 | 2017-07-31 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
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| CN111052396B (zh) * | 2017-09-01 | 2024-03-01 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| JP2020004860A (ja) * | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| US10989946B2 (en) * | 2019-02-21 | 2021-04-27 | Innolux Corporation | Electronic modulating device |
| CN111141340A (zh) * | 2020-01-14 | 2020-05-12 | 青岛海威茨仪表有限公司 | 一种无磁传感间距的自适应密封结构及一种水表 |
| CN111403541A (zh) * | 2020-04-16 | 2020-07-10 | 京东方科技集团股份有限公司 | 光电探测器与显示基板 |
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- 2008-07-11 TW TW097126499A patent/TWI464510B/zh not_active IP Right Cessation
- 2008-07-11 TW TW104138950A patent/TWI575293B/zh not_active IP Right Cessation
- 2008-07-14 JP JP2008182189A patent/JP2009049385A/ja not_active Withdrawn
- 2008-07-15 US US12/219,023 patent/US7940345B2/en not_active Expired - Fee Related
- 2008-07-17 CN CN201210586007.7A patent/CN103066113B/zh active Active
- 2008-07-17 CN CN2008101339953A patent/CN101350367B/zh not_active Expired - Fee Related
- 2008-07-17 CN CN201110111609.2A patent/CN102184969B/zh not_active Expired - Fee Related
- 2008-07-17 CN CN201210585984.5A patent/CN103064222B/zh not_active Expired - Fee Related
- 2008-07-17 KR KR1020080069627A patent/KR101581171B1/ko not_active Expired - Fee Related
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