JP2009033139A5 - - Google Patents
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- Publication number
- JP2009033139A5 JP2009033139A5 JP2008167487A JP2008167487A JP2009033139A5 JP 2009033139 A5 JP2009033139 A5 JP 2009033139A5 JP 2008167487 A JP2008167487 A JP 2008167487A JP 2008167487 A JP2008167487 A JP 2008167487A JP 2009033139 A5 JP2009033139 A5 JP 2009033139A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- single crystal
- crystal semiconductor
- symbol
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 34
- 239000013078 crystal Substances 0.000 claims 26
- 239000000758 substrate Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229960001716 benzalkonium Drugs 0.000 claims 3
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008167487A JP5500793B2 (ja) | 2007-06-29 | 2008-06-26 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007173281 | 2007-06-29 | ||
| JP2007173281 | 2007-06-29 | ||
| JP2008167487A JP5500793B2 (ja) | 2007-06-29 | 2008-06-26 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009033139A JP2009033139A (ja) | 2009-02-12 |
| JP2009033139A5 true JP2009033139A5 (enExample) | 2011-07-07 |
| JP5500793B2 JP5500793B2 (ja) | 2014-05-21 |
Family
ID=40159297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008167487A Expired - Fee Related JP5500793B2 (ja) | 2007-06-29 | 2008-06-26 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7807520B2 (enExample) |
| JP (1) | JP5500793B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9346998B2 (en) | 2009-04-23 | 2016-05-24 | The University Of Chicago | Materials and methods for the preparation of nanocomposites |
| KR101962603B1 (ko) | 2009-10-16 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| KR101800038B1 (ko) * | 2009-12-04 | 2017-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US8759917B2 (en) * | 2010-01-04 | 2014-06-24 | Samsung Electronics Co., Ltd. | Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
| TWI424392B (zh) * | 2010-01-29 | 2014-01-21 | Prime View Int Co Ltd | 主動元件陣列基板及使用其之平面顯示器 |
| CN102742002B (zh) * | 2010-02-12 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| US9093538B2 (en) * | 2011-04-08 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9012905B2 (en) * | 2011-04-08 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same |
| WO2012158847A2 (en) | 2011-05-16 | 2012-11-22 | The University Of Chicago | Materials and methods for the preparation of nanocomposites |
| JP5912394B2 (ja) * | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI457890B (zh) * | 2012-08-17 | 2014-10-21 | 聚積科技股份有限公司 | Display structure and display |
| JP6824115B2 (ja) * | 2017-06-19 | 2021-02-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN110571333B (zh) * | 2019-08-13 | 2023-06-30 | 北京元芯碳基集成电路研究院 | 一种无掺杂晶体管器件制作方法 |
| US11067269B1 (en) * | 2020-01-31 | 2021-07-20 | Dell Products, Lp | System and method for backlight integration with electrical contact foil in piezoelectric haptic keyboard |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0618926A (ja) | 1992-07-02 | 1994-01-28 | Sharp Corp | 液晶表示用大型基板およびその製造方法 |
| JPH0832038A (ja) * | 1994-07-15 | 1996-02-02 | Komatsu Electron Metals Co Ltd | 貼り合わせｓｏｉ基板の製造方法および貼り合わせｓｏｉ基板 |
| JPH0927452A (ja) * | 1995-07-12 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US5710057A (en) * | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
| JP2000124092A (ja) * | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP3997682B2 (ja) * | 2000-03-13 | 2007-10-24 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| US6602758B2 (en) * | 2001-06-15 | 2003-08-05 | Agere Systems, Inc. | Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing |
| JP3696131B2 (ja) * | 2001-07-10 | 2005-09-14 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法 |
| JP2003282885A (ja) * | 2002-03-26 | 2003-10-03 | Sharp Corp | 半導体装置およびその製造方法 |
| US7119365B2 (en) * | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP4103447B2 (ja) * | 2002-04-30 | 2008-06-18 | 株式会社Ｉｈｉ | 大面積単結晶シリコン基板の製造方法 |
| JP3918708B2 (ja) * | 2002-10-08 | 2007-05-23 | セイコーエプソン株式会社 | 回路基板及びその製造方法、転写チップ、転写元基板、電気光学装置、電子機器 |
| JP4151420B2 (ja) * | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | デバイスの製造方法 |
| US6949451B2 (en) * | 2003-03-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI chip with recess-resistant buried insulator and method of manufacturing the same |
| JP3946683B2 (ja) * | 2003-09-25 | 2007-07-18 | 株式会社東芝 | アクティブマトリクス基板の製造方法 |
| US7229901B2 (en) * | 2004-12-16 | 2007-06-12 | Wisconsin Alumni Research Foundation | Fabrication of strained heterojunction structures |
| US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
-
2008
- 2008-06-19 US US12/142,454 patent/US7807520B2/en not_active Expired - Fee Related
- 2008-06-26 JP JP2008167487A patent/JP5500793B2/ja not_active Expired - Fee Related