JP5500793B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5500793B2
JP5500793B2 JP2008167487A JP2008167487A JP5500793B2 JP 5500793 B2 JP5500793 B2 JP 5500793B2 JP 2008167487 A JP2008167487 A JP 2008167487A JP 2008167487 A JP2008167487 A JP 2008167487A JP 5500793 B2 JP5500793 B2 JP 5500793B2
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Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor layer
transistor
substrate
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Expired - Fee Related
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JP2008167487A
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English (en)
Japanese (ja)
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JP2009033139A (ja
JP2009033139A5 (enExample
Inventor
肇 木村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008167487A priority Critical patent/JP5500793B2/ja
Publication of JP2009033139A publication Critical patent/JP2009033139A/ja
Publication of JP2009033139A5 publication Critical patent/JP2009033139A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
JP2008167487A 2007-06-29 2008-06-26 半導体装置の製造方法 Expired - Fee Related JP5500793B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008167487A JP5500793B2 (ja) 2007-06-29 2008-06-26 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007173281 2007-06-29
JP2007173281 2007-06-29
JP2008167487A JP5500793B2 (ja) 2007-06-29 2008-06-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009033139A JP2009033139A (ja) 2009-02-12
JP2009033139A5 JP2009033139A5 (enExample) 2011-07-07
JP5500793B2 true JP5500793B2 (ja) 2014-05-21

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Family Applications (1)

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JP2008167487A Expired - Fee Related JP5500793B2 (ja) 2007-06-29 2008-06-26 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US7807520B2 (enExample)
JP (1) JP5500793B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9346998B2 (en) 2009-04-23 2016-05-24 The University Of Chicago Materials and methods for the preparation of nanocomposites
KR101426723B1 (ko) 2009-10-16 2014-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101501420B1 (ko) * 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
TWI424392B (zh) * 2010-01-29 2014-01-21 Prime View Int Co Ltd 主動元件陣列基板及使用其之平面顯示器
WO2011099389A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US9093538B2 (en) * 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) * 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
WO2012158847A2 (en) 2011-05-16 2012-11-22 The University Of Chicago Materials and methods for the preparation of nanocomposites
JP5912394B2 (ja) * 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
TWI457890B (zh) * 2012-08-17 2014-10-21 聚積科技股份有限公司 Display structure and display
JP6824115B2 (ja) * 2017-06-19 2021-02-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110571333B (zh) * 2019-08-13 2023-06-30 北京元芯碳基集成电路研究院 一种无掺杂晶体管器件制作方法
US11067269B1 (en) * 2020-01-31 2021-07-20 Dell Products, Lp System and method for backlight integration with electrical contact foil in piezoelectric haptic keyboard

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618926A (ja) 1992-07-02 1994-01-28 Sharp Corp 液晶表示用大型基板およびその製造方法
JPH0832038A (ja) * 1994-07-15 1996-02-02 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉ基板の製造方法および貼り合わせｓｏｉ基板
JPH0927452A (ja) * 1995-07-12 1997-01-28 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP3997682B2 (ja) * 2000-03-13 2007-10-24 セイコーエプソン株式会社 電気光学装置の製造方法及び電気光学装置
US6602758B2 (en) * 2001-06-15 2003-08-05 Agere Systems, Inc. Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing
JP3696131B2 (ja) * 2001-07-10 2005-09-14 株式会社東芝 アクティブマトリクス基板及びその製造方法
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
JP3918708B2 (ja) * 2002-10-08 2007-05-23 セイコーエプソン株式会社 回路基板及びその製造方法、転写チップ、転写元基板、電気光学装置、電子機器
JP4151420B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
US6949451B2 (en) * 2003-03-10 2005-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
JP3946683B2 (ja) * 2003-09-25 2007-07-18 株式会社東芝 アクティブマトリクス基板の製造方法
US7229901B2 (en) * 2004-12-16 2007-06-12 Wisconsin Alumni Research Foundation Fabrication of strained heterojunction structures
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator

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Publication number Publication date
US7807520B2 (en) 2010-10-05
JP2009033139A (ja) 2009-02-12
US20090001387A1 (en) 2009-01-01

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