JP2009031784A - 表示装置およびその作製方法 - Google Patents

表示装置およびその作製方法 Download PDF

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Publication number
JP2009031784A
JP2009031784A JP2008167138A JP2008167138A JP2009031784A JP 2009031784 A JP2009031784 A JP 2009031784A JP 2008167138 A JP2008167138 A JP 2008167138A JP 2008167138 A JP2008167138 A JP 2008167138A JP 2009031784 A JP2009031784 A JP 2009031784A
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region
semiconductor
pixel
substrate
display
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JP2009031784A5 (enExample
Inventor
Yasunori Yoshida
泰則 吉田
Akihisa Shimomura
明久 下村
Yurika Satou
由里香 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008167138A 2007-06-29 2008-06-26 表示装置およびその作製方法 Withdrawn JP2009031784A (ja)

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JP2008167138A JP2009031784A (ja) 2007-06-29 2008-06-26 表示装置およびその作製方法

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JP2009031784A5 JP2009031784A5 (enExample) 2011-07-14

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087345A (ja) * 2008-10-01 2010-04-15 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法
CN102855820A (zh) * 2011-06-30 2013-01-02 三星显示有限公司 有机发光显示装置
JP2016146499A (ja) * 2010-08-06 2016-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2017157814A (ja) * 2016-03-03 2017-09-07 上海新昇半導體科技有限公司 Ｓｏｉ基板及びその製造方法
JP2017157815A (ja) * 2016-03-03 2017-09-07 上海新昇半導體科技有限公司 Ｓｏｉ基板及びその製造方法
JP2017188691A (ja) * 2009-03-05 2017-10-12 株式会社半導体エネルギー研究所 半導体装置
WO2017185769A1 (zh) * 2016-04-29 2017-11-02 京东方科技集团股份有限公司 像素阵列及其制造方法和有机发光二极管阵列基板

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