JP2009010347A5 - - Google Patents

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Publication number
JP2009010347A5
JP2009010347A5 JP2008130460A JP2008130460A JP2009010347A5 JP 2009010347 A5 JP2009010347 A5 JP 2009010347A5 JP 2008130460 A JP2008130460 A JP 2008130460A JP 2008130460 A JP2008130460 A JP 2008130460A JP 2009010347 A5 JP2009010347 A5 JP 2009010347A5
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JP
Japan
Prior art keywords
semiconductor film
added
conductivity type
impurity element
forming
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JP2008130460A
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English (en)
Japanese (ja)
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JP5364293B2 (ja
JP2009010347A (ja
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Priority to JP2008130460A priority Critical patent/JP5364293B2/ja
Priority claimed from JP2008130460A external-priority patent/JP5364293B2/ja
Publication of JP2009010347A publication Critical patent/JP2009010347A/ja
Publication of JP2009010347A5 publication Critical patent/JP2009010347A5/ja
Application granted granted Critical
Publication of JP5364293B2 publication Critical patent/JP5364293B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008130460A 2007-06-01 2008-05-19 表示装置の作製方法およびプラズマｃｖｄ装置 Expired - Fee Related JP5364293B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008130460A JP5364293B2 (ja) 2007-06-01 2008-05-19 表示装置の作製方法およびプラズマｃｖｄ装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007147386 2007-06-01
JP2007147386 2007-06-01
JP2008130460A JP5364293B2 (ja) 2007-06-01 2008-05-19 表示装置の作製方法およびプラズマｃｖｄ装置

Publications (3)

Publication Number Publication Date
JP2009010347A JP2009010347A (ja) 2009-01-15
JP2009010347A5 true JP2009010347A5 (enExample) 2011-04-28
JP5364293B2 JP5364293B2 (ja) 2013-12-11

Family

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Family Applications (1)

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JP2008130460A Expired - Fee Related JP5364293B2 (ja) 2007-06-01 2008-05-19 表示装置の作製方法およびプラズマｃｖｄ装置

Country Status (5)

Country Link
US (1) US8647933B2 (enExample)
JP (1) JP5364293B2 (enExample)
KR (1) KR101482754B1 (enExample)
CN (1) CN101315884B (enExample)
TW (1) TWI479572B (enExample)

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JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
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KR101457837B1 (ko) * 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR102256492B1 (ko) 2009-06-30 2021-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
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KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101931206B1 (ko) 2009-11-13 2018-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20210043743A (ko) 2009-12-04 2021-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8383434B2 (en) 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
CN104862651A (zh) * 2015-06-09 2015-08-26 电子科技大学 氢化硅薄膜的制备装置和制备方法
KR102619949B1 (ko) 2016-05-16 2024-01-03 삼성전자주식회사 안테나, 그를 포함하는 마이크로파 플라즈마 소스, 플라즈마 처리 장치
CN107895713B (zh) * 2017-11-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 Tft基板制作方法

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