JP2009004487A5 - - Google Patents

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Publication number
JP2009004487A5
JP2009004487A5 JP2007162508A JP2007162508A JP2009004487A5 JP 2009004487 A5 JP2009004487 A5 JP 2009004487A5 JP 2007162508 A JP2007162508 A JP 2007162508A JP 2007162508 A JP2007162508 A JP 2007162508A JP 2009004487 A5 JP2009004487 A5 JP 2009004487A5
Authority
JP
Japan
Prior art keywords
substrate
composition ratio
layer
absorption layer
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007162508A
Other languages
English (en)
Japanese (ja)
Other versions
JP5426081B2 (ja
JP2009004487A (ja
Filing date
Publication date
Priority claimed from JP2007162508A external-priority patent/JP5426081B2/ja
Priority to JP2007162508A priority Critical patent/JP5426081B2/ja
Application filed filed Critical
Priority to TW097115869A priority patent/TWI440068B/zh
Priority to KR1020080049550A priority patent/KR101459517B1/ko
Priority to US12/142,030 priority patent/US8158459B2/en
Publication of JP2009004487A publication Critical patent/JP2009004487A/ja
Publication of JP2009004487A5 publication Critical patent/JP2009004487A5/ja
Priority to US13/418,037 priority patent/US8288868B2/en
Publication of JP5426081B2 publication Critical patent/JP5426081B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007162508A 2007-06-20 2007-06-20 基板接合方法及び半導体装置 Expired - Fee Related JP5426081B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007162508A JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置
TW097115869A TWI440068B (zh) 2007-06-20 2008-04-30 基材接合方法以及半導體元件
KR1020080049550A KR101459517B1 (ko) 2007-06-20 2008-05-28 기판 접합 방법 및 반도체 장치
US12/142,030 US8158459B2 (en) 2007-06-20 2008-06-19 Substrate bonding method and semiconductor device
US13/418,037 US8288868B2 (en) 2007-06-20 2012-03-12 Substrate bonding method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007162508A JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置

Publications (3)

Publication Number Publication Date
JP2009004487A JP2009004487A (ja) 2009-01-08
JP2009004487A5 true JP2009004487A5 (enExample) 2010-07-22
JP5426081B2 JP5426081B2 (ja) 2014-02-26

Family

ID=40135641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007162508A Expired - Fee Related JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置

Country Status (4)

Country Link
US (2) US8158459B2 (enExample)
JP (1) JP5426081B2 (enExample)
KR (1) KR101459517B1 (enExample)
TW (1) TWI440068B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5519355B2 (ja) 2010-03-19 2014-06-11 スタンレー電気株式会社 半導体発光素子及びその製造方法
US8569889B1 (en) * 2011-02-09 2013-10-29 Nlight Photonics Corporation Nano thick Pt metallization layer
JP6067982B2 (ja) 2012-03-19 2017-01-25 スタンレー電気株式会社 半導体素子の製造方法
JP6005957B2 (ja) * 2012-03-19 2016-10-12 スタンレー電気株式会社 半導体素子及びその製造方法
CN104584214B (zh) 2012-09-05 2018-08-03 亮锐控股有限公司 载体晶片从器件晶片的激光去键合
US9676047B2 (en) 2013-03-15 2017-06-13 Samsung Electronics Co., Ltd. Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
US9516762B2 (en) 2014-08-04 2016-12-06 Ok International Inc. Soldering iron with automatic soldering connection validation
US9327361B2 (en) 2014-08-04 2016-05-03 Ok International Inc. Intelligent soldering cartridge for automatic soldering connection validation
US10688578B2 (en) 2014-08-04 2020-06-23 OK International, Inc Variable temperature controlled soldering iron
US10716220B2 (en) 2014-08-04 2020-07-14 Ok International, Inc. Variable temperature controlled soldering iron
DE112016006934B4 (de) * 2016-07-04 2020-01-23 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235323A (ja) 1992-02-20 1993-09-10 Olympus Optical Co Ltd 半導体装置
JP4514400B2 (ja) * 2001-09-27 2010-07-28 古河電気工業株式会社 部材の接合方法、その方法で得られた接合部材
JP4814503B2 (ja) 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
JP4891556B2 (ja) * 2005-03-24 2012-03-07 株式会社東芝 半導体装置の製造方法
JP2006332435A (ja) 2005-05-27 2006-12-07 Sharp Corp サブマウント、半導体レーザ装置およびその製造方法、ホログラムレーザ装置、並びに光ピックアップ装置
US8643195B2 (en) * 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US7855459B2 (en) * 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
JP5376866B2 (ja) * 2008-08-22 2013-12-25 スタンレー電気株式会社 半導体発光装置の製造方法及び半導体発光装置

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