JP7176048B2 - 半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法 - Google Patents
半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法 Download PDFInfo
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- JP7176048B2 JP7176048B2 JP2021102320A JP2021102320A JP7176048B2 JP 7176048 B2 JP7176048 B2 JP 7176048B2 JP 2021102320 A JP2021102320 A JP 2021102320A JP 2021102320 A JP2021102320 A JP 2021102320A JP 7176048 B2 JP7176048 B2 JP 7176048B2
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- thermal interface
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 34
- 229910052738 indium Inorganic materials 0.000 claims description 30
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 29
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 229910000846 In alloy Inorganic materials 0.000 claims description 4
- 229910000807 Ga alloy Inorganic materials 0.000 claims 2
- 238000005275 alloying Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010010219 Compulsions Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Description
パッド172をプリント回路基板の電気コネクタ176に電気的に接続している。178は、半導体デバイス158と回路基板160との間に施されたアンダーフィルを示す。この例はさらに、熱界面154を半導体デバイス158に接合させることができるように、裏面メタライゼーション156が半導体デバイス158に施されていることを示す。熱交換器152が、熱界面154を用いて半導体デバイス158に接合されている。
、半導体ダイ(例えば、集積回路又は他の半導体デバイス)及びそのそれぞれの熱交換器の接合面のいずれか又は両方に二次コーティングを施すことによって強化することができる。
温度は約200℃である。したがって、従来のプロセスを超える利益をもたらすことの可能な実施形態を実施することができる。これらの利点に、例えば、裏面ダイ/ウェーハメタライゼーション、フラックス塗布又は硬化プロセスに使用される資源の削減が含まれてもよい。
Claims (11)
- 半導体デバイスの第1の表面に、バルク液体金属を含む接合促進剤を塗布することと、
前記バルク液体金属を除去して前記半導体デバイスの前記第1の表面上に酸化物シード層を残すことと、
熱界面の第1の表面が前記酸化物シード層と接触するように前記半導体デバイス上に熱界面を配置することと、
前記熱界面の前記第1の表面とは反対側の第2の表面と接触するように熱交換器を配置することと、
前記熱界面および前記熱交換器を配置した後、前記半導体デバイスを前記熱交換器に接合することと、
を含む方法。 - 前記半導体デバイスは、前記熱界面を前記半導体デバイスに接合させるための別個のメタライゼーション層を使用せずに前記熱交換器に接合される、請求項1に記載の方法。
- 前記バルク液体金属は、ガリウムまたはガリウム合金を含む、請求項1に記載の方法。
- 前記バルク液体金属は、インジウムまたはインジウム合金を含む、請求項1に記載の方法。
- 前記熱界面は、インジウム金属を含む、請求項1に記載の方法。
- 前記バルク液体金属は、ガリウムまたはガリウム合金を含む、請求項5に記載の方法。
- 前記バルク液体金属は、インジウムまたはインジウム合金を含む、請求項5に記載の方法。
- 前記熱交換器は、ヒートシンク、ヒートスプレッダまたはリッドを含む、請求項1に記載の方法。
- 前記熱界面の前記第2の表面と接触するように配置される前記熱交換器の表面に、接合促進剤を塗布することをさらに含む、請求項1に記載の方法。
- 前記半導体デバイスを前記熱交換器に接合することは、前記酸化物シード層を前記熱界面と合金化して固体合金を形成することを含む、請求項1に記載の方法。
- 前記酸化物シード層を前記熱界面と合金化して前記固体合金を形成することは、前記半導体デバイス、熱界面、および熱交換器を含むアセンブリにリフロー操作を施すことを含む、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US15/833,982 US10607857B2 (en) | 2017-12-06 | 2017-12-06 | Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger |
US15/833,982 | 2017-12-06 | ||
JP2020529737A JP6903235B2 (ja) | 2017-12-06 | 2018-11-30 | 半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法 |
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JP2020529737A Division JP6903235B2 (ja) | 2017-12-06 | 2018-11-30 | 半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法 |
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JP2021168393A JP2021168393A (ja) | 2021-10-21 |
JP7176048B2 true JP7176048B2 (ja) | 2022-11-21 |
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JP2021102320A Active JP7176048B2 (ja) | 2017-12-06 | 2021-06-21 | 半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法 |
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US (3) | US10607857B2 (ja) |
JP (2) | JP6903235B2 (ja) |
KR (2) | KR102491745B1 (ja) |
CN (2) | CN111448655B (ja) |
MY (1) | MY180857A (ja) |
WO (1) | WO2019112914A1 (ja) |
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US10777483B1 (en) * | 2020-02-28 | 2020-09-15 | Arieca Inc. | Method, apparatus, and assembly for thermally connecting layers |
TW202407077A (zh) * | 2022-06-22 | 2024-02-16 | 德商漢高股份有限及兩合公司 | 含軟性填料分散物之熱介面材料 |
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JP2021168393A (ja) | 2021-10-21 |
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