CN101437971B - 用以降低金属间化合物厚度和金属及合金氧化的合金组合物和技术 - Google Patents

用以降低金属间化合物厚度和金属及合金氧化的合金组合物和技术 Download PDF

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Publication number
CN101437971B
CN101437971B CN200780016282.2A CN200780016282A CN101437971B CN 101437971 B CN101437971 B CN 101437971B CN 200780016282 A CN200780016282 A CN 200780016282A CN 101437971 B CN101437971 B CN 101437971B
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germanium
metal
alloy
weight
gallium
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CN101437971A (zh
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H-S·王
N-C·李
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Indium Corp of America Inc
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Indium Corp of America Inc
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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Abstract

公开了降低IMC厚度和金属及合金氧化的合金组合物和技术。在一个具体的示例性实施方式中，合金组合物可以被认为是合金的组合物或混合物，其基本上由按重量计大约90％至大约99.999％的铟和按重量计大约0.001％至大约10％的锗以及不可避免的杂质组成。在另一个具体的示例性实施方式中，合金组合物可以被认为是基本上由按重量计大约90％至大约99.999％的铟和按重量计大约0.001％至大约10％的锗以及不可避免的杂质组成。

Description

用以降低金属间化合物厚度和金属及合金氧化的合金组合物和技术
相关申请的交叉引用
本专利申请要求2006年5月8日提交的美国临时专利申请第60/746,710号的优先权，该临时申请的全部内容通过引用由此并入本文。
技术领域
本发明一般地涉及电传导和热传导，更具体地涉及降低金属间化合物(IMC)厚度和金属及合金氧化的合金组合物和技术。
背景技术
当使用电子器件时，在工作期间焊接点应该具有足够的可靠性。焊接点的可靠性主要取决于IMC生长，IMC生长由工作期间的时间和产生的热引起。一般来说，由于IMC的脆性、柯肯达尔空洞(Kirkendall voiding)的形成、和/或其上施加焊剂的金属层(一层或多层)的消耗，尤其当诸如凸点下金属化层(under bump metallization，UBM)中金属层(一层或多层)较薄时，较厚的IMC引起可靠性问题。
另一方面，解决设备处理速度和发热的增加问题，要求开发新的热界面材料(thermal interface materials)(TIM’s)。因为具有高热导率，所以热焊剂非常有吸引力。焊接的TIM’s具有和焊接点相似的问题，因为当设备在高温下运行时可能发生引起可靠性问题的IMC生长。
由于低熔点金属与接触界面的良好贴合性、在工作温度下低熔点金属的良好金属相连续性、以及在工作温度下低熔点金属形成良好的导热路径或导热链，低熔点金属，包括液体金属，也如热导材料一样有用。然而，由于迅速氧化和高反应性，低熔点金属的使用在某些具体应用中受到限制。
最近引入了新类型的TIM，诸如聚合物混合焊剂(polymersolder hybrid，PSH)，其中聚合物母体充当芯片或封装件表面的粘合剂，并且焊剂填料用作热导体。尝试了低熔点金属作为导热填料或作为PSH中的部分导热填料的几种可能应用。然而，低熔点金属，包括液体金属，氧化非常迅速并且形成疏松聚集的焊剂，其在界面上容易脱层。因此，使用此类TIM非常具有挑战性。
鉴于上述事项，需要提供降低IMC厚度和金属及合金氧化的技术，克服上述不足和缺点。
发明内容
公开了降低IMC厚度和金属及合金氧化的合金组合物和技术。在一个具体的示例性实施方式中，合金组合物可以被认为是合金的组合物或混合物，其基本上由按重量计大约90％至大约99.999％的铟和按重量计大约0.001％至大约10％的锗以及不可避免的杂质组成。在另一个具体的示例性实施方式中，合金组合物可以被认为是合金的组合物或混合物，其基本上由按重量计大约90％至大约99.999％的铟和按重量计大约0.001％至大约10％的锗、锰、磷和钛中的一种或多种组成。在又一个具体示例性实施方式中，合金组合物可以被认为是基本上由按重量计大约90％至大约99.999％的镓和按重量计大约0.001％至大约10％的锗以及不可避免的杂质组成的合金组合物。在仍另一个具体示例性实施方式中，合金组合物可以被认为是这样的合金组合物，其基本上由按重量计大约90％至大约99.999％的镓和按重量计大约0.001％至大约10％的锗、锰、磷和钛中的一种或多种组成。在仍又一个具体示例性实施方式中，合金组合物可以被认为是基本上由下列组成的合金组合物：镓-铟合金、镓-铟-锡合金、镓-铟-锡-锌合金、镉、镉合金、铟-铅合金、铟-铅-银合金、汞、汞合金、铋-锡合金、铟-锡-铋合金，它们的含有按重量计大约0.001％至大约10％的锗、锰、磷和钛中的一种或多种的混合物，以及不可避免的杂质。
合金组合物可以采取冶金互连材料(metallurgical interconnectmaterial)、热界面材料、导热填料或导热介质的形式。热界面材料可以包含一种或多种相变材料、导热凝胶、导热胶带和散热膏(thermalgrease)。
在一个具体示例性实施方式中，所述技术可以被认为是在金属或金属合金中掺入一种或多种按重量计大约0.001％至大约10％的掺杂剂的方法，所述掺杂剂包括锗、锰、磷和钛中的一种或多种，所述金属或金属合金包含按重量计大约90％至大约99.999％的镓或铟，其中所述方法包括通过加热，以溶液形式，将一种或多种掺杂剂混合入金属或金属合金。该混合物可以被迅速冷却，以得到更细的掺杂剂或金属间颗粒，其比较大的颗粒扩散更快。
在另一个具体示例性实施方式中，该技术可以被认为是在金属或金属合金中掺入一种或多种按重量计大约0.001％至大约10％的掺杂剂的方法，所述掺杂剂包括锗、锰、磷和钛中的一种或多种，所述金属或金属合金包含按重量计大约90％至大约99.999％的镓或铟，其中所述方法包括将一种或多种掺杂剂颗粒混合入熔融金属或金属合金，并将含有一种或多种掺杂剂颗粒的所述熔融金属或金属合金冷却，以形成金属或金属合金复合材料。
在另一个具体示例性实施方式中，该技术可以被认为是在金属或金属合金中掺入一种或多种按重量计大约0.001％至大约10％的掺杂剂的方法，所述掺杂剂包括锗、锰、磷和钛中的一种或多种，所述金属或金属合金包含按重量计大约90％至大约99.999％的镓或铟，其中所述方法包括通过机械力将所述一种或多种掺杂剂混合入固体形式的金属或金属合金。
在另一个具体示例性实施方式中，该技术可以被认为是在金属或金属合金中掺入一种或多种按重量计大约0.001％至大约10％的掺杂剂的方法，所述掺杂剂包括锗、锰、磷和钛中的一种或多种，所述金属或金属合金包含按重量计大约90％至大约99.999％的镓或铟，其中所述方法包括将一种或多种掺杂剂颗粒混合入金属或金属合金粉末，以形成金属或金属合金粉末混合物。
在另一个具体示例性实施方式中，该技术可以被认为是在金属或金属合金中掺入一种或多种按重量计大约0.001％至大约10％的掺杂剂的方法，所述掺杂剂包括锗、锰、磷和钛中的一种或多种，所述金属或金属合金包含按重量计大约90％至大约99.999％的镓或铟，其中所述方法包括将一种或多种掺杂剂以颗粒形式与金属或金属合金一起放入互连衬底中，其中所述互连衬底可以包括电路板上的衬垫、散热器、吸热设备、和元件背面中的至少一种。
现在参考如附图中所示的示例性实施方式，对本发明进行更详细的描述。尽管参考示例性实施方式在下文对本发明进行了描述，但应当理解，本发明并非局限于此。获得本文教导的本领域普通技术人员将认识到另外的实施、修改和实施方式以及其它应用领域，它们在如本文所描述的公开范围内，并且就它们而言，本发明可具有重要应用。
附图说明
为了便于更全面的理解本发明，现在参考附图，其中相同的要素用相同的数字引用。这些附图不应该被解释为限制本发明，而仅仅旨在示例性。
图1是根据本发明的实施方式，老化纯铟(In)和2％锗(Ge)/铟(In)样品的IMC厚度及镍(Ni)层消耗的表格。
图2示出了根据本发明的实施方式，在镍(Ni)/金(Au)衬底上的纯铟(In)样品放大1000倍的扫描电子显微(SEM)照片，所述样品在150℃下老化1000小时。
图3示出了根据本发明的实施方式，在镍(Ni)/金(Au)衬底上的2％锗(Ge)/铟(In)样品放大1000倍的扫描电子显微(SEM)照片，所述样品在150℃下老化1000小时。
图4示出了根据本发明的实施方式，在镍(Ni)/金(Au)衬底上的2％锗(Ge)/铟(In)样品放大3000倍的扫描电子显微(SEM)照片，所述样品在150℃下老化1000小时。
图5是根据本发明的实施方式，老化纯铟(In)和2％锗(Ge)/铟(In)样品的IMC组成的表格。
图6示出了根据本发明的实施方式，对于纯镓(Ga)和掺杂0.05％和0.1％锗(Ge)的镓(Ga)，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图7示出了根据本发明的实施方式，对于掺杂0.5％、0.1％、2％和5％的锗(Ge)的镓，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图8示出了根据本发明的实施方式，对于掺杂0.0001％和0.0005％的锗(Ge)的镓，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图9示出了根据本发明的实施方式，对于含和不含0.5％的锗(Ge)的镓(Ga)/铟(In)合金，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图10示出了根据本发明的实施方式，对于含和不含0.5％的锗(Ge)的铟(In)/铋(Bi)合金，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图11示出了根据本发明的实施方式，对于含有0.5％的磷(P)、0.5％的钛(Ti)、0.5％的锰(Mn)和无掺杂剂的镓(Ga)合金，在85℃/85％相对湿度的室内形成的氧化物的曲线图。
图12是根据本发明的实施方式，对于2％锗(Ge)/镓(Ga)，使用不同激光功率，锗(Ge)对于镓(Ga)的相对峰强度的表格。
图13示出了根据本发明的实施方式，对于15％的激光功率，2％锗(Ge)/镓(Ga)的ICP-MS光谱图。
图14示出了根据本发明的实施方式，对于25％的激光功率，2％锗(Ge)/镓(Ga)的ICP-MS光谱图。
图15示出了根据本发明的实施方式的装配结构，其中通过互连材料——诸如焊剂——在电子元件的衬垫和衬底的衬垫之间形成冶金结合。
图16示出了根据本发明的实施方式TIM在电子组件中的应用。
图17示出了根据本发明的实施方式在IHS和电子元件之间的第一TIM的简化实例，该第一TIM的形式为相变材料、导热凝胶、导热胶带或散热膏，其包含用导热填料填充的聚合物母体。
图18示出了根据本发明实施方式的其中第一TIM是PSH的实例，其中导热填料在工作温度下保持液态，而聚合物母体在IHS和电子元件之间提供机械粘附。
图19示出了根据本发明的实施方式的实例，其中TIM材料可以在无聚合物母体的情况下直接放置在IHS和电子元件之间。
具体实施方式
描述了根据本发明的实施方式的合金组合物和技术，用于降低IMC厚度和金属及合金的氧化。通过实验测试，发现了这类合金组合物和技术。例如，为了解决焊接点可靠性问题，根据本发明的实施方式，使用IMC生长试验来揭示防止互连材料诸如焊剂和TIM的IMC生长的技术。就是说，当在150℃烘箱内老化1000小时后在电解镍(Ni)/金(Au)衬底上的2％(wt)锗(Ge)/铟(In)和纯铟(In)的IMC生长时，观察到显著的、预料不到的效应。在样品老化后，测量样品的IMC厚度和镍(Ni)层消耗。如图1的表格所示，当2％锗(Ge)/铟(In)的IMC厚度为大约2.0-3.4微米时，纯铟(In)的总IMC厚度为大约18.8-19.6微米。所述衬底的镍(Ni)层的初始厚度是5.3微米，含纯铟(In)和2％锗(Ge)/铟(In)的样品的镍(Ni)层消耗分别为45.3-49.1％和3.8-7.5％。图2和图3分别示出了在电解镍(Ni)/金(Au)衬底上的纯铟(In)样品和2％锗(Ge)/铟(In)样品在150℃烘箱内老化1000小时后的扫描电子显微(SEM)照片。2％锗(Ge)/铟(In)样品中的IMC降低非常明显。当在更高放大倍数下观察时，IMC由三层组成也是明显的(参看图4)。
为了理解在掺杂锗的铟中IMC较薄的机理，能量分散光谱法(EDS)是有用的，从而被进行。图5的表格概括了纯铟(In)样品和2％锗(Ge)/铟(In)样品的EDS分析结果。
概括来说，如图2所示，在纯铟(In)样品中仅仅发现一层IMC。然而，如图3和图4所示，在2％锗(Ge)/铟(In)样品中发现三层IMC。如图5的表格所示，纯铟(In)样品中的IMC组成被测定为(Ni，Au)28In72。同时，2％锗(Ge)/铟(In)样品的第一IMC层(即，最接近焊剂的层)的组成被测定为54％的铟(In)、32％的镍(Ni)、13％的锗(Ge)和1％的金(Au)。然而，应当注意，2％锗(Ge)/铟(In)样品的第一IMC层的实际组成可能不是特别精确，因为2％锗(Ge)/铟(In)样品的第一IMC层比测量分辨率薄。因此，在2％锗(Ge)/铟(In)样品的第一IMC层之外的区域中的材料可能被包括在2％锗(Ge)/铟(In)样品的第一IMC层的组成之中。然而，2％锗(Ge)/铟(In)样品的第二IMC层比2％锗(Ge)/铟(In)样品的第一IMC层厚，因此，能够测定2％锗(Ge)/铟(In)样品的第二IMC层的确切组成，为(Ni，In，Au)50Ge50。2％锗(Ge)/铟(In)样品的第三IMC层的组成与纯铟(In)样品中的IMC组成相同。
认为，锗(Ge)与镍(Ni)在老化早期阶段反应，形成富锗(Ge)IMC层，并且这些富锗(Ge)IMC层防止镍(Ni)层与焊剂反应。还认为，当某IMC层形成可阻止焊剂和衬底材料之间互相扩散的致密稳定层时，观察到总IMC较薄和诸如UBM的衬底材料消耗较少。因此，进一步认为，这类保护性IMC层的形成产生更好的可靠性。通过上述讨论，可以得出结论，薄的富锗(Ge)IMC层(一层或多层)起着扩散屏障的作用，以减慢焊剂到衬底的扩散。
根据本发明的实施方式，为了解决包括低熔点金属在内的金属的氧化问题，使用氧化试验来揭示防止氧化的技术。实际上，在氧化试验中，上述锗(Ge)的显著的、预料不到的效应也可以在低熔点金属——诸如镓——中观察到。就是说，低熔点金属99.95％镓(Ga)/0.05％锗(Ge)、99.9％镓(Ga)/0.1％锗(Ge)和纯镓(Ga)的样品被放置在85℃/85％相对湿度的室内。在小瓶中，在金属顶部形成金属氧化物。通过测量金属顶部形成的氧化物部分的高度(体积)来测定氧化物的量。纯镓(Ga)样品的氧化物的量增加迅速，并且在10天内显示出大约90％的氧化物。相比之下，含有少量锗(Ge)的镓(Ga)样品显示出慢得多的氧化速度。实际上，99.95％镓(Ga)/0.05％锗(Ge)和99.9％镓(Ga)/0.1％锗(Ge)样品未显示出显著量的氧化物，直到在85℃/85％相对湿度的室内80天之后(参看图6)。
为了了解较高浓度的锗(Ge)是否可以提供更好的氧化性能，测试含有0.5％、1％、2％和5％(wt)锗(Ge)的镓(Ga)样品。如图7所示，使用较高浓度的锗(Ge)，并没有大的改进。
为了检查锗(Ge)的有效量的下限，测试0.0001％锗(Ge)/镓(Ga)和0.0005％锗(Ge)/镓(Ga)。如图8所示，对于这些合金，仅仅观察到轻微的影响。
镓(Ga)/铟(In)是低共熔合金，因此也可以是良好的热界面材料。鉴于上述发现，锗(Ge)对这类合金的抗氧化效应因而是令人感兴趣的。因此，比较78.6％镓(Ga)/21.4％铟(In)合金和0.5％锗(Ge)/78.2％镓(Ga)/21.3％铟(In)合金的氧化速率。如图9所示，含锗(Ge)的镓(Ga)/铟(In)合金显示出稳定得多的氧化性能。
铋(Bi)/铟(In)也是低共熔合金，因此也可以是良好的热界面材料。鉴于上述发现，锗(Ge)对这类合金的抗氧化效应因而是令人感兴趣的。因此，比较66.7％铟(In)/33.3％铋(Bi)合金和0.5％锗(Ge)/66.4％铟(In)/33.1％铋(Bi)合金的氧化速率。如图10所示，对于含锗(Ge)的铟(In)/铋(Bi)合金，仅仅观察到微小的抗氧化效应。
为了比较的目的，鉴于上述发现，其它掺杂剂对镓(Ga)的抗氧化效应将是令人感兴趣的。因此，比较0.5％磷(P)/镓(Ga)、0.5％钛(Ti)/镓(Ga)和0.5％锰(Mn)/镓(Ga)与纯镓(Ga)的氧化速率。如图11所示，对于掺杂磷(P)、钛(Ti)和锰(Mn)的镓(Ga)，观察到一些抗氧化效应，但不如掺杂锗(Ge)的镓(Ga)明显。
使用锗(Ge)来防止镓(Ga)氧化的机理得到了研究。假设，薄的含锗(Ge)保护层得以形成，并且该层防止镓(Ga)与氧的进一步反应。激光烧蚀ICP-MS法被用于确认该机理。该激光烧蚀ICP-MS法被广泛用于表面组成分析。在该方法中，高能激光烧蚀样品表面的小区域。然后，被烧蚀的材料被转移到ICP-MS分析室。激光强度越高，烧蚀越深。
当使用较低的激光功率(15％)以便烧蚀较浅时，对于2％锗(Ge)/镓(Ga)，锗(Ge)主峰(68.8-68.9)相对于镓主峰(68.8-68.9)的相对强度是31-32％。当使用较高的激光功率(25％)时，锗(Ge)的相对强度是8-10％。结果给出了定性证据——锗(Ge)原子转到表面，保护合金不被氧化。在样品的不同点重复该试验，并显示出相同的结果。图12-14示出了该分析结果。
参考图15，示出了根据本发明的实施方式的装配结构，其中通过互连材料3，诸如焊剂，在电子元件1的衬垫2和衬底5的衬垫4之间形成冶金结合。在焊剂互连材料3和元件衬垫2和/或衬底衬垫4之间建立IMC层。本文描述的组合物可以降低焊剂互连材料3和元件衬垫2和/或衬底衬垫4之间的IMC生长，以增加电子元件1的可靠性。
参考图16，示出了根据本发明实施方式的TIM在电子组件中的应用。电子组件包括衬底5，其通过互连材料10连接于电子元件1。使用第一TIM9，集成散热器(IHS)8被附于电子元件1的顶侧，以散去电子元件1产生的热。IHS8还通过第二TIM7连接于吸热设备6上，以进一步散热。
第一TIM9和第二TIM7的最有效的材料之一是热焊剂，诸如铟、铟合金、镓-铟合金、镓-铟-锡合金、镓-铟-锡-锌合金、铟-铅合金、铟-铅-银合金、铋-锡合金和铟-锡-铋合金。本文描述的组合物可以降低电子元件1和IHS8之间和/或IHS8和吸热设备6之间的IMC生长，以增加可靠性。
参考图17，示出了根据本发明的实施方式在IHS8和电子元件1之间的第一TIM9的简化实例，该第一TIM9的形式为相变材料、导热凝胶、导热胶带或散热膏，其包含用导热填料11填充的聚合物母体12。导热填料11可以包括铟、铟合金、镓、镓-铟合金、镓-铟-锡合金、镓-铟-锡-锌合金、镉、镉合金、铟-铅合金、铟-铅-银合金、汞、汞合金、铋-锡合金和铟-锡-铋合金。本文描述的组合物可以改进氧化性能，并且降低导热填料11的反应性。
参考图18，示出了根据本发明的实施方式其中第一TIM9是PSH的实例，其中导热填料13在工作温度下保持液态，而聚合物母体12在IHS8和电子元件1之间提供机械粘附。导热填料13可以包括铟、镓、镓-铟合金、镓-铟-锡合金、镓-铟-锡-锌合金、镉、镉合金、铟-铅合金、铟-铅-银合金、汞、汞合金、铋-锡合金和铟-锡-铋合金。本文描述的组合物可以改进氧化性能，并且降低导热填料13的反应性。
参考图19，示出了根据本发明的实施方式的实例，其中TIM材料15可以在无聚合物母体12的情况下直接放置在IHS8和电子元件1之间。TIM材料15可以是液体金属，诸如镓或低熔点金属或合金。限制器(confiner)14可被用来防止液体形式的TIM材料15从IHS8和电子元件1之间泄漏。本文描述的组合物可以改进氧化性能，并且降低TIM材料15的反应性。
本发明不局限于本文描述的具体实施方式的范围。实际上，通过上文的描述和附图，除了本文描述的那些之外，本发明的其它各种实施方式和修改，对于本领域普通技术人员是明显的。因此，这类其它实施方式和修改旨在落入本发明的范围。此外，尽管对于特定目的，在特定环境下的特定实施方式的情况中，在本文中对本发明进行了描述，但是本领域普通技术人员将认识到其有用性不局限于此，并且本发明可以针对任何目的在任何环境下被有利地实施。因此，应该考虑本文所描述的公开内容的全部范围和精神，解释下面提出的的权利要求。

Claims (10)

1.合金组合物，其由按重量计90％至99.999％的镓和按重量计0.001％至10％的锗以及不可避免的杂质组成，其中，当所述合金冶金结合至Ni/Au衬底时，在金属间化合物层中存在锗。
2.在金属中掺入锗的方法，所述金属由镓组成，所述方法包括：
通过加热，以溶液形式，将按重量计0.001％至10％的锗混合入按重量计90％至99.999％的所述金属，
其中，当所述混合步骤的产物冶金结合至Ni/Au衬底时，在金属间化合物层中存在锗。
3.根据权利要求2所述的方法，进一步包括：
将所述溶液迅速冷却，以得到更细的掺杂剂或金属间化合物的颗粒，其比较大的颗粒扩散更快。
4.在熔融金属中掺入锗的方法，所述熔融金属由镓组成，所述方法包括：
将按重量计0.001％至10％的锗以颗粒形式混合入按重量计90％至99.999％的所述熔融金属；和
将含有锗颗粒的所述熔融金属冷却，以形成金属复合材料，
其中，当所述金属复合材料冶金结合至Ni/Au衬底时，在金属间化合物层中存在锗。
5.在金属粉末中掺入锗的方法，所述金属粉末由按重量计90％至99.999％的镓组成，所述方法包括：
将按重量计0.001％至10％的锗以颗粒形式混合入按重量计90％至99.999％的所述金属粉末，以形成金属粉末混合物，
其中，当所述金属粉末混合物冶金结合至Ni/Au衬底时，在金属间化合物层中存在锗。
6.冶金互连材料，其由权利要求1所述的组合物形成。
7.热界面材料，其包括权利要求1所述的组合物。
8.根据权利要求7所述的热界面材料，进一步包含相变材料、导热凝胶、导热胶带和散热膏的一种或多种。
9.导热填料，其由权利要求1所述的组合物形成。
10.导热介质，其由权利要求1所述的组合物形成。
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2473285A (en) * 2009-09-08 2011-03-09 Astron Advanced Materials Ltd Low temperature joining process
US8348139B2 (en) * 2010-03-09 2013-01-08 Indium Corporation Composite solder alloy preform
EP2670560B1 (en) 2011-02-04 2016-01-13 Antaya Technologies Corp. Lead-free solder composition
CN103107104A (zh) * 2011-11-11 2013-05-15 北京大学深圳研究生院 一种倒装芯片的制作方法
CN103131396B (zh) * 2011-12-02 2016-01-27 中国科学院理化技术研究所 一种热界面材料及其制造方法
CN104031600B (zh) * 2013-03-04 2016-03-23 中国科学院理化技术研究所 一种绝缘的导热金属胶及其制造方法
US10269682B2 (en) * 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
CN107396592B (zh) * 2016-05-17 2021-02-02 中兴通讯股份有限公司 终端设备及其散热结构
JP6647139B2 (ja) * 2016-05-23 2020-02-14 三菱電機株式会社 放熱シートおよび半導体装置
CN106918538B (zh) * 2017-04-13 2019-11-08 中国电子产品可靠性与环境试验研究所 无铅焊点界面金属化合物生长厚度的预测方法和系统
US10607857B2 (en) * 2017-12-06 2020-03-31 Indium Corporation Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850412A (en) * 1954-08-13 1958-09-02 Sylvania Electric Prod Process for producing germaniumindium alloyed junctions
US4735771A (en) * 1986-12-03 1988-04-05 Chrysler Motors Corporation Method of preparing oxidation resistant iron base alloy compositions
US4960654A (en) * 1988-08-29 1990-10-02 Matsushita Electric Industrial Co., Ltd. Metal composition comprising zinc oxide whiskers
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
US5770482A (en) * 1996-10-08 1998-06-23 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto
US5773359A (en) * 1995-12-26 1998-06-30 Motorola, Inc. Interconnect system and method of fabrication
US6220607B1 (en) * 1998-04-17 2001-04-24 Applied Materials, Inc. Thermally conductive conformal media
US6653741B2 (en) * 2001-05-24 2003-11-25 Fry's Metals, Inc. Thermal interface material and heat sink configuration

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2806807A (en) * 1955-08-23 1957-09-17 Gen Electric Method of making contacts to semiconductor bodies
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
US5053195A (en) * 1989-07-19 1991-10-01 Microelectronics And Computer Technology Corp. Bonding amalgam and method of making
US5061442A (en) * 1990-10-09 1991-10-29 Eastman Kodak Company Method of forming a thin sheet of an amalgam

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850412A (en) * 1954-08-13 1958-09-02 Sylvania Electric Prod Process for producing germaniumindium alloyed junctions
US4735771A (en) * 1986-12-03 1988-04-05 Chrysler Motors Corporation Method of preparing oxidation resistant iron base alloy compositions
US4960654A (en) * 1988-08-29 1990-10-02 Matsushita Electric Industrial Co., Ltd. Metal composition comprising zinc oxide whiskers
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
US5773359A (en) * 1995-12-26 1998-06-30 Motorola, Inc. Interconnect system and method of fabrication
US5770482A (en) * 1996-10-08 1998-06-23 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto
US6220607B1 (en) * 1998-04-17 2001-04-24 Applied Materials, Inc. Thermally conductive conformal media
US6653741B2 (en) * 2001-05-24 2003-11-25 Fry's Metals, Inc. Thermal interface material and heat sink configuration

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Kawakita T. et al.Surface Improvement Method For Controlling Oxidation Of Low Melting Point Metal-surface Improvement By Ge Implantation Into In Surface.《IEMT/IMC Symposium》.1997,实验部分,结论部分. *

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