JP2009004487A - 基板接合方法及び半導体装置 - Google Patents
基板接合方法及び半導体装置 Download PDFInfo
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Abstract
【解決手段】 (a)第1の基板(1)の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第1のSn吸収層(5)を形成する。(b)第2の基板(11)の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第2のSn吸収層(17)を形成する。(c)前記第1のSn吸収層及び前記第2のSn吸収層の少なくとも一方のSn吸収層の上に、AuSn合金からなる半田層(7)を形成する。(d)前記第1の基板と第2の基板の主表面同士が対向するように、前記第1の基板と第2の基板とを密着させた状態で、前記半田層を溶融させて、該第1の基板を第2の基板に接合する。
【選択図】 図1−2
Description
(a)第1の基板の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第1のSn吸収層を形成する工程と、
(b)第2の基板の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第2のSn吸収層を形成する工程と、
(c)前記第1のSn吸収層及び前記第2のSn吸収層の少なくとも一方のSn吸収層の上に、AuSn合金からなる半田層を形成する工程と、
(d)前記第1の基板と第2の基板の主表面同士が対向するように、前記第1の基板と第2の基板とを密着させた状態で、前記半田層を溶融させて、該第1の基板を第2の基板に接合する工程と
を有する基板接合方法が提供される。
第1の基板と、
前記第1の基板に接合された半導体からなる動作層と、
前記動作層を前記第1の基板に接合するAu、Sn、及び他の第3の元素を含む合金からなる接合層と
を有し、前記接合層内に、前記接合層内の厚さ方向に関する中央部分、該中央部分よりも前記第1の基板側の第1の部分、及び前記動作層側の第2の部分を定義したとき、前記中央部分のSnの組成比が、前記第1の部分及び前記第2の部分のいずれのSnの組成比よりも小さく、前記中央部分のAuの組成比が、前記第1の部分及び前記第2の部分のいずれのAuの組成比よりも大きく、前記中央部分の前記第3元素の組成比が、前記第1の部分及び前記第2の部分のいずれの前記第3の元素の組成比よりも小さくなるように各元素の組成比が厚さ方向に関して変化している半導体装置が提供される。
・温度 320〜370℃
・圧着時間 10分間
図1Eに示すように、AuSn半田層7が溶融し、Au層6、18のAu、第1のSn吸収層5及び第2のSn吸収層17のNiが、溶融している半田層7に溶解し、及びAu層6、18、半田層7のAu及びSnが、第1のSn吸収層5及び第2のSn吸収層17内に拡散し、吸収される。溶融した半田層7が固化することにより、AuSnNiからなる接合層20が形成される。接合後、第2の基板11を除去する。第2の基板11がGaAsで形成されている場合には、例えば、アンモニア水と過酸化水素水との混合液を用いたウェットエッチングにより除去することができる。なお、ウェットエッチングの他に、ドライエッチング、化学機械研磨(CMP)、機械的研削等により除去することも可能である。
2、3 Pt層
4 Ti層
5 第1のSn吸収層
6、8、18 Au層
7 半田層
11 第2の基板
12 動作層
13 反射電極層
14 TaN層
15 TiW層
16 TaN層
17 第2のSn吸収層
20 接合層
30 表側電極
50 空洞
Claims (16)
- (a)第1の基板の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第1のSn吸収層を形成する工程と、
(b)第2の基板の主表面上に、AuSn合金からSnを吸収して、該AuSn合金のSnの組成比を低下させる金属からなる第2のSn吸収層を形成する工程と、
(c)前記第1のSn吸収層及び前記第2のSn吸収層の少なくとも一方のSn吸収層の上に、AuSn合金からなる半田層を形成する工程と、
(d)前記第1の基板と第2の基板の主表面同士が対向するように、前記第1の基板と第2の基板とを密着させた状態で、前記半田層を溶融させて、該第1の基板を第2の基板に接合する工程と
を有する基板接合方法。 - 前記第1のSn吸収層及び第2のSn吸収層がNiで形成されている請求項1に記載の基板接合方法。
- 前記半田層が、前記第1のSn吸収層及び第2のSn吸収層のうち一方のSn吸収層の上にのみ形成されており、前記半田層が形成されている方のSn吸収層の厚さが100nm以上である請求項2に記載の基板接合方法。
- 前記半田層が形成されていない方のSn吸収層の厚さが150nm以上である請求項3に記載の基板接合方法。
- 前記第1のSn吸収層の厚さと前記第2のSn吸収層の厚さとの合計が、前記半田層の厚さの0.41倍以上である請求項2乃至4のいずれか1項に記載の基板接合方法。
- さらに、前記工程(a)の後、前記第1のSn吸収層の表面を第1のAu層で被覆する工程を含む請求項2乃至5のいずれか1項に記載の基板接合方法。
- さらに、前記工程(b)の後、前記第2のSn吸収層の表面を第2のAu層で被覆する工程を含む請求項2乃至6のいずれか1項に記載の基板接合方法。
- さらに、前記工程(c)の後、前記半田層の表面を第3のAu層で覆う工程を含む請求項2乃至7のいずれか1項に記載の基板接合方法。
- 前記工程(d)において前記第1の基板と第2の基板とを密着させた状態で、前記第1のSn吸収層と第2のSn吸収層との間に配置されているAu層の厚さの合計が、前記半田層の厚さの0.39倍以下である請求項6乃至8のいずれか1項に記載の基板接合方法。
- 前記工程(d)において、前記半田層内のSn原子が、前記第1のSn吸収層及び第2のSn吸収層内に拡散することにより、固化後の前記半田層のSnの組成比が、溶融前の前記半田層のSnの組成比より小さくなっている請求項1乃至9のいずれか1項に記載の基板接合方法。
- 溶融前の前記半田層の厚さが1μm以下である請求項1乃至10のいずれか1項に記載の基板接合方法。
- 第1の基板と、
前記第1の基板に接合された半導体からなる動作層と、
前記動作層を前記第1の基板に接合するAu、Sn、及び他の第3の元素を含む合金からなる接合層と
を有し、前記接合層内に、前記接合層内の厚さ方向に関する中央部分、該中央部分よりも前記第1の基板側の第1の部分、及び前記動作層側の第2の部分を定義したとき、前記中央部分のSnの組成比が、前記第1の部分及び前記第2の部分のいずれのSnの組成比よりも小さく、前記中央部分のAuの組成比が、前記第1の部分及び前記第2の部分のいずれのAuの組成比よりも大きく、前記中央部分の前記第3元素の組成比が、前記第1の部分及び前記第2の部分のいずれの前記第3の元素の組成比よりも小さくなるように各元素の組成比が厚さ方向に関して変化している半導体装置。 - 第1の基板と、
前記第1の基板に接合された半導体からなる動作層と、
前記動作層を前記第1の基板に接合するAu、Sn、及び他の第3の元素を含む合金からなる接合層と
を有し、前記接合層が、前記第3の元素を主成分とする2つの層と、該2つの層の間に配置されたAuを主成分とする層とを含む半導体装置。 - 前記第3の元素が、Ni、Pt、またはPdである請求項12または13に記載の半導体装置。
- 前記第1の部分及び第2の部分において、第3の元素の組成比が、Auの組成比及びSnの組成比のいずれよりも大きい請求項12乃至14のいずれか1項に記載の半導体装置。
- 前記中央部分において、Auの組成比が第3の元素の組成比よりも大きく、第3の元素の組成比がSnの組成比よりも大きい請求項12乃至15のいずれか1項に記載の半導体装置。
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JP2013197257A (ja) * | 2012-03-19 | 2013-09-30 | Stanley Electric Co Ltd | 半導体素子及びその製造方法 |
JP6289756B1 (ja) * | 2016-07-04 | 2018-03-07 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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US9676047B2 (en) | 2013-03-15 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same |
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