JP5426081B2 - 基板接合方法及び半導体装置 - Google Patents

基板接合方法及び半導体装置 Download PDF

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Publication number
JP5426081B2
JP5426081B2 JP2007162508A JP2007162508A JP5426081B2 JP 5426081 B2 JP5426081 B2 JP 5426081B2 JP 2007162508 A JP2007162508 A JP 2007162508A JP 2007162508 A JP2007162508 A JP 2007162508A JP 5426081 B2 JP5426081 B2 JP 5426081B2
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Japan
Prior art keywords
layer
substrate
composition ratio
absorption layer
bonding
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Expired - Fee Related
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JP2007162508A
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English (en)
Japanese (ja)
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JP2009004487A5 (enExample
JP2009004487A (ja
Inventor
利裕 世古
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2007162508A priority Critical patent/JP5426081B2/ja
Priority to TW097115869A priority patent/TWI440068B/zh
Priority to KR1020080049550A priority patent/KR101459517B1/ko
Priority to US12/142,030 priority patent/US8158459B2/en
Publication of JP2009004487A publication Critical patent/JP2009004487A/ja
Publication of JP2009004487A5 publication Critical patent/JP2009004487A5/ja
Priority to US13/418,037 priority patent/US8288868B2/en
Application granted granted Critical
Publication of JP5426081B2 publication Critical patent/JP5426081B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
JP2007162508A 2007-06-20 2007-06-20 基板接合方法及び半導体装置 Expired - Fee Related JP5426081B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007162508A JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置
TW097115869A TWI440068B (zh) 2007-06-20 2008-04-30 基材接合方法以及半導體元件
KR1020080049550A KR101459517B1 (ko) 2007-06-20 2008-05-28 기판 접합 방법 및 반도체 장치
US12/142,030 US8158459B2 (en) 2007-06-20 2008-06-19 Substrate bonding method and semiconductor device
US13/418,037 US8288868B2 (en) 2007-06-20 2012-03-12 Substrate bonding method and semiconductor device

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Application Number Priority Date Filing Date Title
JP2007162508A JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置

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JP2009004487A JP2009004487A (ja) 2009-01-08
JP2009004487A5 JP2009004487A5 (enExample) 2010-07-22
JP5426081B2 true JP5426081B2 (ja) 2014-02-26

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US (2) US8158459B2 (enExample)
JP (1) JP5426081B2 (enExample)
KR (1) KR101459517B1 (enExample)
TW (1) TWI440068B (enExample)

Families Citing this family (11)

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JP5519355B2 (ja) 2010-03-19 2014-06-11 スタンレー電気株式会社 半導体発光素子及びその製造方法
US8569889B1 (en) * 2011-02-09 2013-10-29 Nlight Photonics Corporation Nano thick Pt metallization layer
JP6067982B2 (ja) 2012-03-19 2017-01-25 スタンレー電気株式会社 半導体素子の製造方法
JP6005957B2 (ja) * 2012-03-19 2016-10-12 スタンレー電気株式会社 半導体素子及びその製造方法
WO2014037829A1 (en) 2012-09-05 2014-03-13 Koninklijke Philips N.V. Laser de-bond of carrier wafer from device wafer
US9676047B2 (en) 2013-03-15 2017-06-13 Samsung Electronics Co., Ltd. Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
US10688578B2 (en) 2014-08-04 2020-06-23 OK International, Inc Variable temperature controlled soldering iron
US10716220B2 (en) 2014-08-04 2020-07-14 Ok International, Inc. Variable temperature controlled soldering iron
US9516762B2 (en) 2014-08-04 2016-12-06 Ok International Inc. Soldering iron with automatic soldering connection validation
US9327361B2 (en) 2014-08-04 2016-05-03 Ok International Inc. Intelligent soldering cartridge for automatic soldering connection validation
DE112016006934B4 (de) * 2016-07-04 2020-01-23 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235323A (ja) 1992-02-20 1993-09-10 Olympus Optical Co Ltd 半導体装置
JP4514400B2 (ja) * 2001-09-27 2010-07-28 古河電気工業株式会社 部材の接合方法、その方法で得られた接合部材
JP4814503B2 (ja) 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
JP4891556B2 (ja) * 2005-03-24 2012-03-07 株式会社東芝 半導体装置の製造方法
JP2006332435A (ja) 2005-05-27 2006-12-07 Sharp Corp サブマウント、半導体レーザ装置およびその製造方法、ホログラムレーザ装置、並びに光ピックアップ装置
US8643195B2 (en) * 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US7855459B2 (en) * 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
JP5376866B2 (ja) * 2008-08-22 2013-12-25 スタンレー電気株式会社 半導体発光装置の製造方法及び半導体発光装置

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TW200903575A (en) 2009-01-16
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US20080315427A1 (en) 2008-12-25

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